Fabrizio Bonani
Fabrizio Bonani
Professor of Electronics, Politecnico di Torino, Dipartimento di Elettronica e
Verified email at - Homepage
Cited by
Cited by
Noise in semiconductor devices
F Bonani, G Ghione
Noise in Semiconductor Devices, 1-213, 2001
An efficient approach to noise analysis through multidimensional physics-based models
F Bonani, G Ghione, MR Pinto, RK Smith
IEEE Transactions on Electron Devices 45 (1), 261-269, 1998
Analysis of stability and bifurcations of limit cycles in Chua's circuit through the harmonic-balance approach
F Bonani, M Gilli
IEEE Transactions on Circuits and Systems I: Fundamental Theory and …, 1999
On the application of the Kirchhoff transformation to the steady-state thermal analysis of semiconductor devices with temperature-dependent and piecewise inhomogeneous thermal …
F Bonani, G Ghione
Solid-State Electronics 38 (7), 1409-1412, 1995
Memcomputing NP-complete problems in polynomial time using polynomial resources and collective states
FL Traversa, C Ramella, F Bonani, M Di Ventra
Science advances 1 (6), e1500031, 2015
Generation–recombination noise modelling in semiconductor devices through population or approximate equivalent current density fluctuations
F Bonani, G Ghione
Solid-State Electronics 43 (2), 285-295, 1999
A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation
F Bonani, SD Guerrieri, G Ghione, M Pirola
IEEE Transactions on Electron Devices 48 (5), 966-977, 2001
A frequency‐domain approach to the analysis of stability and bifurcations in nonlinear systems described by differential‐algebraic equations
FL Traversa, F Bonani, SD Guerrieri
International Journal of Circuit Theory and Applications 36 (4), 421-439, 2008
Dynamic computing random access memory
FL Traversa, F Bonani, YV Pershin, M Di Ventra
Nanotechnology 25 (28), 285201, 2014
Noise source modeling for cyclostationary noise analysis in large-signal device operation
F Bonani, SD Guerrieri, G Ghione
IEEE Transactions on Electron Devices 49 (9), 1640-1647, 2002
Physics-based simulation techniques for small-and large-signal device noise analysis in RF applications
F Bonani, SD Guerrieri, G Ghione
IEEE Transactions on Electron Devices 50 (3), 633-644, 2003
Oscillator noise: A nonlinear perturbative theory including orbital fluctuations and phase-orbital correlation
FL Traversa, F Bonani
IEEE Transactions on Circuits and Systems I: Regular Papers 58 (10), 2485-2497, 2011
Improved harmonic balance implementation of Floquet analysis for nonlinear circuit simulation
FL Traversa, F Bonani
AEU-International journal of electronics and communications 66 (5), 357-363, 2012
Generalized Floquet theory: application to dynamical systems with memory and Bloch's theorem for nonlocal potentials
FL Traversa, M Di Ventra, F Bonani
arXiv preprint arXiv:1212.4212, 2012
A unified approach to the sensitivity and variability physics-based modeling of semiconductor devices operated in dynamic conditions—Part I: Large-signal sensitivity
SD Guerrieri, F Bonani, F Bertazzi, G Ghione
IEEE Transactions on Electron Devices 63 (3), 1195-1201, 2016
Transfer matrix method modelling of inhomogeneous Schottky barrier diodes on silicon carbide
M Furno, F Bonani, G Ghione
Solid-state electronics 51 (3), 466-474, 2007
Self-consistent coupled carrier transport full-wave EM analysis of semiconductor traveling-wave devices
F Bertazzi, F Cappelluti, SD Guerrieri, F Bonani, G Ghione
IEEE transactions on microwave theory and techniques 54 (4), 1611-1618, 2006
Physics-based mixed-mode reverse recovery modeling and optimization of Si PiN and MPS fast recovery diodes
F Cappelluti, F Bonani, M Furno, G Ghione, R Carta, L Bellemo, ...
Microelectronics journal 37 (3), 190-196, 2006
Physics-based RF noise modeling of submicron MOSFETs
S Donati, MA Alam, KS Krisch, S Martin, MR Pinto, HH Vuong, F Bonani, ...
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
On the substrate thermal optimization in SiC-based backside-mounted high-power GaN FETs
F Cappelluti, M Furno, A Angelini, F Bonani, M Pirola, G Ghione
IEEE transactions on electron devices 54 (7), 1744-1752, 2007
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