Follow
Harry Liu
Harry Liu
Unknown affiliation
Verified email at rice.edu
Title
Cited by
Cited by
Year
Patient support program increased medication adherence with lower total health care costs despite increased drug spending
D Brixner, DT Rubin, P Mease, M Mittal, H Liu, M Davis, A Ganguli, ...
Journal of managed care & specialty pharmacy 25 (7), 770-779, 2019
462019
MRAM architecture using offset bits for increased write selectivity
S Li, T Zhu, AS Arrott, H Liu, WL Larson, Y Lu
US Patent 6,424,561, 2002
432002
Passivated magneto-resistive bit structure and passivation method therefor
H Liu, L Berg, WL Larson, S Li, T Zhu, J Drewes
US Patent 6,392,922, 2002
332002
Passivated magneto-resistive bit structure
H Liu, L Berg, WL Larson, S Li, T Zhu, J Drewes
US Patent 6,806,546, 2004
302004
A charge-control SPICE engineering model for the parasitic bipolar transistor action in SOI CMOS single-event upsets
DE Fulkerson, H Liu
IEEE Transactions on Nuclear Science 51 (1), 275-287, 2004
242004
Limiting upset cross sections of SEU hardened SOI SRAMs
MS Liu, HY Liu, N Brewster, D Nelson, KW Golke, G Kirchner, HL Hughes, ...
IEEE transactions on nuclear science 53 (6), 3487-3493, 2006
222006
Radiation-hardened SRAM cell with write error protection
H Liu
US Patent 7,233,518, 2007
202007
Proton-induced upset in SOI CMOS SRAMS
ST Liu, HY Liu, D Anthony, W Heikkila, H Hughes, A Campbell, ...
IEEE transactions on nuclear science 51 (6), 3475-3479, 2004
202004
Pseudo-spin-valve device performance for giant magnetoresistive random access memory applications
RR Katti, A Arrott, J Drewes, W Larson, H Liu, Y Lu, T Vogt, T Zhu
IEEE transactions on magnetics 37 (4), 1967-1969, 2001
162001
Radiation-hardened memory element with multiple delay elements
D Nelson, K Golke, HHL Liu, M Liu
US Patent 8,767,444, 2014
142014
Proton induced single event upset in 6 T SOI SRAMs
HY Liu, MS Liu, HL Hughes
IEEE transactions on nuclear science 53 (6), 3502-3505, 2006
132006
Proton induced single event upset in a 4M SOI SRAM
HY Liu, ST Liu, KW Golke, DK Nelson, WW Heikkila, WC Jenkins
2003 IEEE International Conference on SOI, 26-27, 2003
132003
Proton and heavy ion SEU resistant SRAM
M Liu, H Liu
US Patent 7,200,031, 2007
102007
Magneto-resistive bit structure and method of manufacture therefor
H Liu, W Larson, L Berg, T Zhu, S Li, RR Katti, Y Lu, A Arrott
US Patent 6,717,194, 2004
102004
Passivated magneto-resistive bit structure and passivation method therefor
H Liu, L Berg, WL Larson, S Li, T Zhu, J Drewes
US Patent 6,623,987, 2003
102003
MRAM architectures for increased write selectivity
S Li, T Zhu, AS Arrott, H Liu, WL Larson, Y Lu
US Patent 6,522,574, 2003
102003
The effect of active delay element resistance on limiting heavy ion SEU upset cross-sections of SOI ADE/SRAMs
ST Liu, DK Nelson, JC Tsang, K Golke, P Fechner, W Heikkila, N Brewster, ...
IEEE Transactions on Nuclear Science 54 (6), 2480-2487, 2007
92007
System and method for hardening MRAM bits
OJ Hynes, R Katti, HHL Liu, MS Liu
US Patent 7,286,393, 2007
92007
A new dose rate model for SOI MOSFETs and its implementation in SPICE
HY Liu, KW Golke, ST Liu
2005 IEEE International SOI Conference Proceedings, 112-113, 2005
92005
Paper FD-04 presented at the 8th Joint MMM-Intermag Conference
R Katti, A Arrot, J Drewes, W Larson, H Liu, Y Lu, T Vogt, T Zhu
San Antonio, TX 7, 2001
82001
The system can't perform the operation now. Try again later.
Articles 1–20