Achim Trampert
Achim Trampert
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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
P Waltereit, O Brandt, A Trampert, HT Grahn, J Menniger, M Ramsteiner, ...
nature 406 (6798), 865-868, 2000
X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films
VM Kaganer, O Brandt, A Trampert, KH Ploog
Physical Review B 72 (4), 045423, 2005
Origin of high-temperature ferromagnetism in (Ga, Mn) N layers grown on 4H–SiC (0001) by reactive molecular-beam epitaxy
S Dhar, O Brandt, A Trampert, L Däweritz, KJ Friedland, KH Ploog, ...
Applied Physics Letters 82 (13), 2077-2079, 2003
On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy
J Ristić, E Calleja, S Fernández-Garrido, L Cerutti, A Trampert, U Jahn, ...
Journal of crystal growth 310 (18), 4035-4045, 2008
Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisks
E Calleja, J Ristić, S Fernández‐Garrido, L Cerutti, MA Sánchez‐García, ...
physica status solidi (b) 244 (8), 2816-2837, 2007
Impact of nucleation conditions on the structural and optical properties of M-plane GaN (1100) grown on γ-LiAlO2
YJ Sun, O Brandt, U Jahn, TY Liu, A Trampert, S Cronenberg, S Dhar, ...
Journal of Applied Physics 92 (10), 5714-5719, 2002
Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius
V Consonni, M Knelangen, L Geelhaar, A Trampert, H Riechert
Physical Review B 81 (8), 085310, 2010
Wurtzite GaN nanocolumns grown on Si (001) by molecular beam epitaxy
L Cerutti, J Ristić, S Fernández-Garrido, E Calleja, A Trampert, KH Ploog, ...
Applied physics letters 88 (21), 2006
Correlation of structure and magnetism in GaAs with embedded Mn (Ga) As magnetic nanoclusters
M Moreno, A Trampert, B Jenichen, L Däweritz, KH Ploog
Journal of Applied Physics 92 (8), 4672-4677, 2002
Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells
W Bergbauer, M Strassburg, C Kölper, N Linder, C Roder, J Lähnemann, ...
Nanotechnology 21 (30), 305201, 2010
Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K
S Dhar, L Pérez, O Brandt, A Trampert, KH Ploog, J Keller, B Beschoten
Physical Review B 72 (24), 245203, 2005
Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction
Y He, P Tang, Z Hu, Q He, C Zhu, L Wang, Q Zeng, P Golani, G Gao, W Fu, ...
Nature communications 11 (1), 57, 2020
High resolution transmission electron microscopy studies of the Ag/MgO interface
A Trampert, F Ernst, CP Flynn, HF Fischmeister, M Ru
Acta metallurgica et materialia 40, S227-S236, 1992
The nanorod approach: GaN NanoLEDs for solid state lighting
A Waag, X Wang, S Fündling, J Ledig, M Erenburg, R Neumann, ...
physica status solidi c 8 (7‐8), 2296-2301, 2011
Clustering in a precipitate-free GeMn magnetic semiconductor
D Bougeard, S Ahlers, A Trampert, N Sircar, G Abstreiter
Physical Review Letters 97 (23), 237202, 2006
Characterization of GaN quantum discs embedded in nanocolumns grown by molecular beam epitaxy
J Ristić, E Calleja, MA Sanchez-Garcia, JM Ulloa, J Sanchez-Paramo, ...
Physical Review B 68 (12), 125305, 2003
Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC (0001)
P Waltereit, O Brandt, A Trampert, M Ramsteiner, M Reiche, M Qi, ...
Applied physics letters 74 (24), 3660-3662, 1999
Metal–Semiconductor Phase‐Transition in WSe2(1‐x)Te2x Monolayer
P Yu, J Lin, L Sun, QL Le, X Yu, G Gao, CH Hsu, D Wu, TR Chang, ...
Advanced Materials 29 (4), 1603991, 2017
Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer
V Consonni, M Hanke, M Knelangen, L Geelhaar, A Trampert, H Riechert
Physical Review B 83 (3), 035310, 2011
Observation of spin-glass behavior in homogeneous (Ga, Mn) N layers grown by reactive molecular-beam epitaxy
S Dhar, O Brandt, A Trampert, KJ Friedland, YJ Sun, KH Ploog
Physical Review B 67 (16), 165205, 2003
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