| Integrated fab process for metal oxide EUV photoresist A Grenville, JT Anderson, BL Clark, P De Schepper, J Edson, M Greer, ... Advances in Patterning Materials and Processes XXXII 9425, 225-232, 2015 | 94 | 2015 |
| Metal oxide EUV photoresist performance for N7 relevant patterns and processes J Stowers, J Anderson, B Cardineau, B Clark, P De Schepper, J Edson, ... Advances in Patterning Materials and Processes XXXIII 9779, 977904, 2016 | 45 | 2016 |
| 28nm pitch single exposure patterning readiness by metal oxide resist on 0.33 NA EUV lithography D De Simone, L Kljucar, P Das, R Blanc, C Beral, J Severi, ... Extreme Ultraviolet (EUV) Lithography XII 11609, 43-53, 2021 | 32 | 2021 |
| Molecular glass resists for scanning probe lithography C Neuber, A Ringk, T Kolb, F Wieberger, P Strohriegl, HW Schmidt, ... Alternative Lithographic Technologies VI 9049, 375-383, 2014 | 27 | 2014 |
| Demonstration of an N7 integrated fab process for metal oxide EUV photoresist D De Simone, M Mao, M Kocsis, P De Schepper, F Lazzarino, ... Extreme Ultraviolet (EUV) Lithography VII 9776, 93-101, 2016 | 22 | 2016 |
| XAS photoresists electron/quantum yields study with synchrotron light P De Schepper, AV Pret, T Hansen, A Giglia, K Hoshiko, A Mani, ... Advances in Patterning Materials and Processes XXXII 9425, 50-59, 2015 | 22 | 2015 |
| Study of ultrasound-assisted radio-frequency plasma discharges in n-dodecane E Camerotto, P De Schepper, AY Nikiforov, S Brems, D Shamiryan, ... Journal of Physics D: Applied Physics 45 (43), 435201, 2012 | 21 | 2012 |
| Characterizing and modeling electrical response to light for metal-based EUV photoresists AV Pret, M Kocsis, D De Simone, G Vandenberghe, J Stowers, A Giglia, ... Advances in Patterning Materials and Processes XXXIII 9779, 6-17, 2016 | 20 | 2016 |
| Radiography of paintings: limitations of transmission radiography and exploration of emission radiography using phosphor imaging plates O Schalm, L Vanbiervliet, P Willems, P De Schepper Studies in Conservation 59 (1), 10-23, 2014 | 20 | 2014 |
| Patterned organometallic photoresists and methods of patterning M Kocsis, P De Schepper, M Greer, SH Chang US Patent 11,480,874, 2022 | 16 | 2022 |
| Calibration of a MOx-specific EUV photoresist lithography model CD Needham, A Narasimhan, U Welling, LS Melvin III, P De Schepper, ... Extreme Ultraviolet (EUV) Lithography XI 11323, 67-80, 2020 | 10 | 2020 |
| Modeling and experimental investigation of the plasma uniformity in CF4/O2 capacitively coupled plasmas, operating in single frequency and dual frequency regime YR Zhang, S Tinck, PD Schepper, YN Wang, A Bogaerts Journal of Vacuum Science & Technology A 33 (2), 2015 | 10 | 2015 |
| Line edge and width roughness smoothing by plasma treatment P De Schepper, T Hansen, E Altamirano-Sanchez, AV Pret, W Boullart, ... Advanced Etch Technology for Nanopatterning II 8685, 37-44, 2013 | 10 | 2013 |
| Pattern Roughness Mitigation of 22 nm Lines and Spaces: The Impact of a H2 Plasma Treatment P De Schepper, A Vaglio Pret, Z El Otell, T Hansen, ... Plasma Processes and Polymers 12 (2), 153-161, 2015 | 9 | 2015 |
| Aman-ur-Rehman, and A. Bogaerts B Gul, S Tinck, P De Schepper J. Phys. D: Appl. Phys 48, 025202, 2015 | 9 | 2015 |
| Advances in defect performance in metal oxide photoresists for EUV lithography ST Meyers, J Doise, M Kocsis, SH Chang, BL Clark, P De Schepper, ... Extreme Ultraviolet (EUV) Lithography XII 11609, 116090K, 2021 | 7 | 2021 |
| Formation of a Nanoscale SiO2 Capping Layer on Photoresist Lines with an Ar/SiCl4/O2 Inductively Coupled Plasma: A Modeling Investigation S Tinck, E Altamirano‐Sánchez, P De Schepper, A Bogaerts Plasma Processes and Polymers 11 (1), 52-62, 2014 | 7 | 2014 |
| Numerical Investigation of SiO2 Coating Deposition in Wafer Processing Reactors with SiCl4/O2/Ar Inductively Coupled Plasmas S Tinck, P De Schepper, A Bogaerts Plasma Processes and Polymers 10 (8), 714-730, 2013 | 7 | 2013 |
| Patterning with metal-oxide EUV photoresist: patterning capability, resist smoothing, trimming, and selective stripping M Mao, F Lazzarino, P De Schepper, D De Simone, D Piumi, V Luong, ... Advances in Patterning Materials and Processes XXXIV 10146, 110-118, 2017 | 6 | 2017 |
| Plasma method for reducing post-lithography line width roughness P De Schepper, J De Marneffe, EA Sanchez US Patent 9,520,298, 2016 | 6 | 2016 |
Jean-Francois de MarneffePrincipal Member of Technical Staff at imec vzwVerified email at imec.be
