Ping Wang
Ping Wang
Electrical Engineering and Computer Science, University of Michigan
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High‐Output‐Power Ultraviolet Light Source from Quasi‐2D GaN Quantum Structure
X Rong, X Wang, SV Ivanov, X Jiang, G Chen, P Wang, W Wang, C He, ...
Advanced Materials 28 (36), 7978-7983, 2016
Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt
Y Wang, X Rong, S Ivanov, V Jmerik, Z Chen, H Wang, T Wang, P Wang, ...
Advanced Optical Materials 7 (10), 1801763, 2019
Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy
P Wang, D Wang, NM Vu, T Chiang, JT Heron, Z Mi
Applied Physics Letters 118 (22), 223504, 2021
Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires
P Wang, Y Yuan, C Zhao, X Wang, X Zheng, X Rong, T Wang, B Sheng, ...
Nano letters 16 (2), 1328-1334, 2016
Monolayer GaN excitonic deep ultraviolet light emitting diodes
Y Wu, X Liu, P Wang, DA Laleyan, K Sun, Y Sun, C Ahn, M Kira, ...
Applied Physics Letters 116 (1), 013101, 2020
Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al (Ga) N Nanowire and Planar Heterostructures
A Aiello, Y Wu, A Pandey, P Wang, W Lee, D Bayerl, N Sanders, Z Deng, ...
Nano Letters 19 (11), 7852-7858, 2019
Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire
D Wang, J Su, Z Chen, T Wang, L Yang, B Sheng, S Lin, X Rong, P Wang, ...
Advanced Electronic Materials 5 (2), 1800651, 2019
β-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy
J Wei, K Kim, F Liu, P Wang, X Zheng, Z Chen, D Wang, A Imran, X Rong, ...
Journal of Semiconductors 40 (1), 012802, 2019
Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy
X Rong, X Wang, G Chen, J Pan, P Wang, H Liu, F Xu, P Tan, B Shen
Superlattices and Microstructures 93, 27-31, 2016
Ultrahigh Q microring resonators using a single-crystal aluminum-nitride-on-sapphire platform
Y Sun, W Shin, DA Laleyan, P Wang, A Pandey, X Liu, Y Wu, M Soltani, ...
Optics letters 44 (23), 5679-5682, 2019
Molecular beam epitaxy and characterization of wurtzite ScxAl1−xN
P Wang, DA Laleyan, A Pandey, Y Sun, Z Mi
Applied Physics Letters 116 (15), 151903, 2020
Single‐photon emission from a further confined InGaN/GaN quantum disc via reverse‐reaction growth
X Sun, P Wang, B Sheng, T Wang, Z Chen, K Gao, M Li, J Zhang, W Ge, ...
Quantum Engineering 1 (3), e20, 2019
Graphene-assisted molecular beam epitaxy of AlN for AlGaN deep-ultraviolet light-emitting diodes
P Wang, A Pandey, J Gim, WJ Shin, ET Reid, DA Laleyan, Y Sun, ...
Applied Physics Letters 116 (17), 171905, 2020
High-electron-mobility InN epilayers grown on silicon substrate
H Liu, X Wang, Z Chen, X Zheng, P Wang, B Sheng, T Wang, X Rong, ...
Applied Physics Letters 112 (16), 162102, 2018
Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs
Z Chen, X Zheng, Z Li, P Wang, X Rong, T Wang, X Yang, F Xu, Z Qin, ...
Applied Physics Letters 109 (6), 062104, 2016
Intersubband transition in GaN/InGaN multiple quantum wells
G Chen, XQ Wang, X Rong, P Wang, FJ Xu, N Tang, ZX Qin, YH Chen, ...
Scientific reports 5 (1), 1-6, 2015
Identifying a doping type of semiconductor nanowires by photoassisted kelvin probe force microscopy as exemplified for GaN nanowires
X Sun, X Wang, P Wang, B Sheng, M Li, J Su, J Zhang, F Liu, X Rong, ...
Optical Materials Express 7 (3), 904-912, 2017
Experimental Evidence of Large Bandgap Energy in Atomically Thin AlN
P Wang, T Wang, H Wang, X Sun, P Huang, B Sheng, X Rong, X Zheng, ...
Advanced Functional Materials 29 (36), 1902608, 2019
N-polar ScAlN and HEMTs grown by molecular beam epitaxy
P Wang, D Wang, B Wang, S Mohanty, S Diez, Y Wu, Y Sun, E Ahmadi, ...
Applied Physics Letters 119 (8), 082101, 2021
High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy
T Wang, X Wang, Z Chen, X Sun, P Wang, X Zheng, X Rong, L Yang, ...
Advanced Science 5 (9), 1800844, 2018
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