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Ping Wang
Ping Wang
Electrical Engineering and Computer Science, University of Michigan
Verified email at umich.edu
Title
Cited by
Cited by
Year
High‐Output‐Power Ultraviolet Light Source from Quasi‐2D GaN Quantum Structure
X Rong, X Wang, SV Ivanov, X Jiang, G Chen, P Wang, W Wang, C He, ...
Advanced Materials 28 (36), 7978-7983, 2016
612016
Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt
Y Wang, X Rong, S Ivanov, V Jmerik, Z Chen, H Wang, T Wang, P Wang, ...
Advanced Optical Materials 7 (10), 1801763, 2019
462019
Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy
P Wang, D Wang, NM Vu, T Chiang, JT Heron, Z Mi
Applied Physics Letters 118 (22), 223504, 2021
332021
Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires
P Wang, Y Yuan, C Zhao, X Wang, X Zheng, X Rong, T Wang, B Sheng, ...
Nano letters 16 (2), 1328-1334, 2016
332016
Monolayer GaN excitonic deep ultraviolet light emitting diodes
Y Wu, X Liu, P Wang, DA Laleyan, K Sun, Y Sun, C Ahn, M Kira, ...
Applied Physics Letters 116 (1), 013101, 2020
322020
Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al (Ga) N Nanowire and Planar Heterostructures
A Aiello, Y Wu, A Pandey, P Wang, W Lee, D Bayerl, N Sanders, Z Deng, ...
Nano Letters 19 (11), 7852-7858, 2019
322019
Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire
D Wang, J Su, Z Chen, T Wang, L Yang, B Sheng, S Lin, X Rong, P Wang, ...
Advanced Electronic Materials 5 (2), 1800651, 2019
322019
β-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy
J Wei, K Kim, F Liu, P Wang, X Zheng, Z Chen, D Wang, A Imran, X Rong, ...
Journal of Semiconductors 40 (1), 012802, 2019
312019
Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy
X Rong, X Wang, G Chen, J Pan, P Wang, H Liu, F Xu, P Tan, B Shen
Superlattices and Microstructures 93, 27-31, 2016
312016
Ultrahigh Q microring resonators using a single-crystal aluminum-nitride-on-sapphire platform
Y Sun, W Shin, DA Laleyan, P Wang, A Pandey, X Liu, Y Wu, M Soltani, ...
Optics letters 44 (23), 5679-5682, 2019
292019
Molecular beam epitaxy and characterization of wurtzite ScxAl1−xN
P Wang, DA Laleyan, A Pandey, Y Sun, Z Mi
Applied Physics Letters 116 (15), 151903, 2020
282020
Single‐photon emission from a further confined InGaN/GaN quantum disc via reverse‐reaction growth
X Sun, P Wang, B Sheng, T Wang, Z Chen, K Gao, M Li, J Zhang, W Ge, ...
Quantum Engineering 1 (3), e20, 2019
262019
Graphene-assisted molecular beam epitaxy of AlN for AlGaN deep-ultraviolet light-emitting diodes
P Wang, A Pandey, J Gim, WJ Shin, ET Reid, DA Laleyan, Y Sun, ...
Applied Physics Letters 116 (17), 171905, 2020
222020
High-electron-mobility InN epilayers grown on silicon substrate
H Liu, X Wang, Z Chen, X Zheng, P Wang, B Sheng, T Wang, X Rong, ...
Applied Physics Letters 112 (16), 162102, 2018
222018
Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs
Z Chen, X Zheng, Z Li, P Wang, X Rong, T Wang, X Yang, F Xu, Z Qin, ...
Applied Physics Letters 109 (6), 062104, 2016
222016
Intersubband transition in GaN/InGaN multiple quantum wells
G Chen, XQ Wang, X Rong, P Wang, FJ Xu, N Tang, ZX Qin, YH Chen, ...
Scientific reports 5 (1), 1-6, 2015
212015
Identifying a doping type of semiconductor nanowires by photoassisted kelvin probe force microscopy as exemplified for GaN nanowires
X Sun, X Wang, P Wang, B Sheng, M Li, J Su, J Zhang, F Liu, X Rong, ...
Optical Materials Express 7 (3), 904-912, 2017
202017
Experimental Evidence of Large Bandgap Energy in Atomically Thin AlN
P Wang, T Wang, H Wang, X Sun, P Huang, B Sheng, X Rong, X Zheng, ...
Advanced Functional Materials 29 (36), 1902608, 2019
182019
N-polar ScAlN and HEMTs grown by molecular beam epitaxy
P Wang, D Wang, B Wang, S Mohanty, S Diez, Y Wu, Y Sun, E Ahmadi, ...
Applied Physics Letters 119 (8), 082101, 2021
172021
High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy
T Wang, X Wang, Z Chen, X Sun, P Wang, X Zheng, X Rong, L Yang, ...
Advanced Science 5 (9), 1800844, 2018
172018
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