| Electrical properties of La2O3 and HfO2∕ La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices G Mavrou, S Galata, P Tsipas, A Sotiropoulos, Y Panayiotatos, ... Journal of Applied Physics 103 (1), 2008 | 141 | 2008 |
| Interface engineering for Ge metal-oxide–semiconductor devices A Dimoulas, DP Brunco, S Ferrari, JW Seo, Y Panayiotatos, ... Thin Solid Films 515 (16), 6337-6343, 2007 | 105 | 2007 |
| Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack A Ritenour, A Khakifirooz, DA Antoniadis, RZ Lei, W Tsai, A Dimoulas, ... Applied physics letters 88 (13), 2006 | 84 | 2006 |
| Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates G Mavrou, P Tsipas, A Sotiropoulos, S Galata, Y Panayiotatos, ... Applied Physics Letters 93 (21), 2008 | 71 | 2008 |
| Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks P Tsipas, SN Volkos, A Sotiropoulos, SF Galata, G Mavrou, D Tsoutsou, ... Applied physics letters 93 (8), 2008 | 70 | 2008 |
| Nanoindentation studies of multilayer amorphous carbon films S Logothetidis, S Kassavetis, C Charitidis, Y Panayiotatos, A Laskarakis Carbon 42 (5-6), 1133-1136, 2004 | 70 | 2004 |
| Electron energy band alignment at interfaces of (100) Ge with rare-earth oxide insulators VV Afanas’ev, S Shamuilia, A Stesmans, A Dimoulas, Y Panayiotatos, ... Applied physics letters 88 (13), 2006 | 64 | 2006 |
| The role of La surface chemistry in the passivation of Ge A Dimoulas, D Tsoutsou, Y Panayiotatos, A Sotiropoulos, G Mavrou, ... Applied Physics Letters 96 (1), 2010 | 61 | 2010 |
| Joining of ceramic matrix composites to high temperature ceramics for thermal protection systems C Jiménez, K Mergia, M Lagos, P Yialouris, I Agote, V Liedtke, ... Journal of the European Ceramic Society 36 (3), 443-449, 2016 | 58 | 2016 |
| Germanium MOSFETs With Gate Stacks G Nicholas, DP Brunco, A Dimoulas, J Van Steenbergen, F Bellenger, ... IEEE transactions on electron devices 54 (6), 1425-1430, 2007 | 53 | 2007 |
| Comprehensive study on the properties of multilayered amorphous carbon films S Logothetidis, C Charitidis, M Gioti, Y Panayiotatos, M Handrea, ... Diamond and related materials 9 (3-6), 756-760, 2000 | 51 | 2000 |
| Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition D Tsoutsou, G Apostolopoulos, SF Galata, P Tsipas, A Sotiropoulos, ... Journal of Applied Physics 106 (2), 2009 | 45 | 2009 |
| Epitaxial germanium-on-insulator grown on (001) Si JW Seo, C Dieker, A Tapponnier, C Marchiori, M Sousa, JP Locquet, ... Microelectronic engineering 84 (9-10), 2328-2331, 2007 | 41 | 2007 |
| A quantitative study of the nano-scratch behavior of boron and carbon nitride films C Charitidis, Y Panayiotatos, S Logothetidis Diamond and related materials 12 (3-7), 1088-1092, 2003 | 41 | 2003 |
| Ch. Dieker, EK Evangelou, S. Galata, M. Houssa, and MM Heyns A Dimoulas, DP Brunco, S Ferrari, JW Seo, Y Panayiotatos, ... Thin Solid Films 515, 6337, 2007 | 40 | 2007 |
| Stabilization of a very high-k tetragonal ZrO2 phase by direct doping with germanium D Tsoutsou, G Apostolopoulos, S Galata, P Tsipas, A Sotiropoulos, ... Microelectronic engineering 86 (7-9), 1626-1628, 2009 | 39 | 2009 |
| Homogeneous and amorphous sputtered sp3-bonded BN films at RT: a stress, spectroscopic ellipsometry and XPS study Y Panayiotatos, S Logothetidis, M Handrea, W Kautek Diamond and related materials 12 (3-7), 1151-1156, 2003 | 39 | 2003 |
| Raman and photoluminescence study of magnetron sputtered amorphous carbon films D Papadimitriou, G Roupakas, C Xue, A Topalidou, Y Panayiotatos, ... Thin Solid Films 414 (1), 18-24, 2002 | 35 | 2002 |
| Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric G Mavrou, SF Galata, A Sotiropoulos, P Tsipas, Y Panayiotatos, ... Microelectronic engineering 84 (9-10), 2324-2327, 2007 | 34 | 2007 |
| Structural and optical properties of the recently synthesized (Zr3−x Ti x )AlC2 MAX phases MA Hadi, Y Panayiotatos, A Chroneos Journal of Materials Science: Materials in Electronics 28, 3386-3393, 2017 | 31 | 2017 |
