Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties Y Nam, HO Kim, SH Cho, SHK Park RSC advances 8 (10), 5622-5628, 2018 | 58 | 2018 |
Computational discovery of p-type transparent oxide semiconductors using hydrogen descriptor K Yim, Y Youn, M Lee, D Yoo, J Lee, SH Cho, S Han NPJ Computational Materials 17 (4), http://www.nature.com/articles/s41524-01, 2018 | 45 | 2018 |
Solution-processed indium-free ZnO/SnO 2 bilayer heterostructures as a low-temperature route to high-performance metal oxide thin-film transistors with excellent stabilities S Nam, JH Yang, SH Cho, JH Choi, OS Kwon, ES Park, SJ Lee, KI Cho, ... Journal of Materials Chemistry C 4 (47), 11298-11304, 2016 | 42 | 2016 |
Thin film transistor array panel JW Park, DH Kim, YJ Choi, DH Lee, SH Cho US Patent 9,099,438, 2015 | 37 | 2015 |
Thin film transistor, display device including the same and manufacturing method thereof CHO Sung-Haeng, KH Jeong, J Song, JH Kim, HJ Kim, SH Shim US Patent 7,915,689, 2011 | 37 | 2011 |
Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 for High-Speed Operation JH Yang, JH Choi, SH Cho, JE Pi, HO Kim, CS Hwang, K Park, S Yoo IEEE Electron Device Letters 39 (4), 508-511, 2018 | 33 | 2018 |
Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film … Y Nam, HO Kim, SH Cho, CS Hwang, T Kim, S Jeon, SH Ko Park Journal of Information Display 17 (2), 65-71, 2016 | 33 | 2016 |
High‐Performance Amorphous Multilayered ZnO‐SnO2 Heterostructure Thin‐Film Transistors: Fabrication and Characteristics SJ Lee, CS Hwang, JE Pi, JH Yang, CW Byun, HY Chu, KI Cho, SH Cho Etri journal 37 (6), 1135-1142, 2015 | 33 | 2015 |
InZnO/AlSnZnInO bilayer oxide thin-film transistors with high mobility and high uniformity JH Choi, JH Yang, S Nam, JE Pi, HO Kim, OS Kwon, ES Park, CS Hwang, ... IEEE Electron Device Letters 37 (10), 1295-1298, 2016 | 26 | 2016 |
Laser induced fluorescence and resonant two-photon ionization spectroscopy of jet-cooled 1-hydroxy-9, 10-anthraquinone SH Cho, H Huh, HM Kim, CI Kim, NJ Kim, SK Kim The Journal of chemical physics 122 (3), 034304, 2005 | 26 | 2005 |
Highly stable, high mobility Al: SnZnInO back-channel etch thin-film transistor fabricated using PAN-based wet etchant for source and drain patterning SH Cho, JB Ko, MK Ryu, JH Yang, HI Yeom, SK Lim, CS Hwang, ... IEEE Transactions on Electron Devices 62 (11), 3653-3657, 2015 | 25 | 2015 |
Spectroscopy and energy disposal dynamics of phthalocyanine–Arn (n= 1, 2) complexes generated by hyperthermal pulsed nozzle source SH Cho, M Yoon, SK Kim Chemical Physics Letters 326 (1-2), 65-72, 2000 | 22 | 2000 |
Thin film transistor array panel and manufacturing method thereof DH Kim, YH Khang, DH Lee, SH Park, SH Yu, CK Kim, YS Lee, SH Cho, ... US Patent 9,252,226, 2016 | 21 | 2016 |
Wiring, thin film transistor, thin film transistor panel and methods for manufacturing the same JW Park, CHO Sung-Haeng, KS Kim, DY Cho US Patent 9,245,966, 2016 | 21 | 2016 |
Display substrate and method of manufacturing the same JW Park, DH Lee, CHO Sung-Haeng, WG Lee, HY Ryu, YJ Choi US Patent 8,598,577, 2013 | 21 | 2013 |
Characterization of ZnO–SnO2 nanocomposite thin films deposited by pulsed laser ablation and their field effect electronic properties SJ Lee, CS Hwang, JE Pi, MK Ryu, H Oh, SH Cho, JH Yang, SHK Park, ... Materials Letters 122, 94-97, 2014 | 20 | 2014 |
Impact of transient currents caused by alternating drain stress in oxide semiconductors HJ Lee, SH Cho, K Abe, MJ Lee, M Jung Scientific Reports 7 (1), 9782, 2017 | 17 | 2017 |
Transparent Fingerprint Sensor System for Large Flat Panel Display W Seo, JE Pi, SH Cho, SY Kang, SD Ahn, CS Hwang, HS Jeon, JU Kim, ... Sensors 18 (1), 293-, 2018 | 16 | 2018 |
Defects and charge-trapping mechanisms of double-active-layer In–Zn–O and Al–Sn–Zn–In–O thin-film transistors Y Goh, T Kim, JH Yang, JH Choi, CS Hwang, SH Cho, S Jeon ACS Applied Materials & Interfaces 9 (11), 9271-9279, 2017 | 16 | 2017 |
Influence of gate dielectric/channel interface engineering on the stability of amorphous indium gallium zinc oxide thin‐film transistors SH Cho, MK Ryu, HO Kim, OS Kwon, ES Park, YS Roh, CS Hwang, ... physica status solidi (a) 211 (9), 2126-2133, 2014 | 16 | 2014 |