| A new 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices BF Levine, KK Choi, CG Bethea, J Walker, RJ Malik Picosecond Electronics and Optoelectronics, ThD6, 1987 | 795 | 1987 |
| Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides BF Levine, RJ Malik, J Walker, KK Choi, CG Bethea, DA Kleinman, ... Applied Physics Letters 50 (5), 273-275, 1987 | 425 | 1987 |
| Periodic negative conductance by sequential resonant tunneling through an expanding high-field superlattice domain KK Choi, BF Levine, RJ Malik, J Walker, CG Bethea Physical Review B 35 (8), 4172, 1987 | 401 | 1987 |
| Highly efficient light-emitting diodes with microcavities EF Schubert, NEJ Hunt, M Micovic, RJ Malik, DL Sivco, AY Cho, GJ Zydzik Science 265 (5174), 943-945, 1994 | 348 | 1994 |
| Planar-doped barriers in GaAs by molecular beam epitaxy RJ Malik, TR Aucoin, RL Ross, K Board, CEC Wood, LF Eastman Electronics Letters 22 (16), 836-838, 1980 | 301 | 1980 |
| Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logic F Capasso, S Sen, F Beltram, LM Lunardi, AS Vengurlekar, PR Smith, ... IEEE Transactions on Electron Devices 36 (10), 2065-2082, 1989 | 300 | 1989 |
| Exceeding 20% efficiency with in situ group V doping in polycrystalline CdTe solar cells WK Metzger, S Grover, D Lu, E Colegrove, J Moseley, CL Perkins, X Li, ... Nature Energy 4 (10), 837-845, 2019 | 287 | 2019 |
| High‐detectivity D*=1.0×1010 cm √H̄z̄/W GaAs/AlGaAs multiquantum well λ=8.3 μm infrared detector BF Levine, CG Bethea, G Hasnain, J Walker, RJ Malik Applied physics letters 53 (4), 296-298, 1988 | 280 | 1988 |
| Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivity KK Choi, BF Levine, CG Bethea, J Walker, RJ Malik Applied physics letters 50 (25), 1814-1816, 1987 | 247 | 1987 |
| Temperature and modulation characteristics of resonant-cavity light-emitting diodes EF Schubert, NEJ Hunt, RJ Malik, M Micovic, DL Miller Journal of Lightwave Technology 14 (7), 1721-1729, 1996 | 197 | 1996 |
| Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament RJ Malik, RN Nottenberg, EF Schubert, JF Walker, RW Ryan Applied physics letters 53 (26), 2661-2663, 1988 | 191 | 1988 |
| GaAs/AlGaAs multiquantum well infrared detector arrays using etched gratings G Hasnain, BF Levine, CG Bethea, RA Logan, J Walker, RJ Malik Applied physics letters 54 (25), 2515-2517, 1989 | 188 | 1989 |
| InGaAs/InAlAs multiquantum well intersubband absorption at a wavelength of λ= 4.4 μm BF Levine, AY Cho, J Walker, RJ Malik, DA Kleinman, DL Sivco Applied physics letters 52 (18), 1481-1483, 1988 | 148 | 1988 |
| Optimum emitter grading for heterojunction bipolar transistors JR Hayes, F Capasso, RJ Malik, AC Gossard, W Wiegmann Applied physics letters 43 (10), 949-951, 1983 | 134 | 1983 |
| Quantum well avalanche multiplication initiated by 10 μm intersubband absorption and photoexcited tunneling BF Levine, KK Choi, CG Bethea, J Walker, RJ Malik Applied physics letters 51 (12), 934-936, 1987 | 117 | 1987 |
| Monolithic planar doped barrier subharmonic mixer S Dixon Jr, RJ Malik US Patent 4,563,773, 1986 | 110 | 1986 |
| Tunneling lifetime broadening of the quantum well intersubband photoconductivity spectrum BF Levine, CG Bethea, KK Choi, J Walker, RJ Malik Applied physics letters 53 (3), 231-233, 1988 | 103 | 1988 |
| Bound‐to‐extended state absorption GaAs superlattice transport infrared detectors BF Levine, CG Bethea, KK Choi, J Walker, RJ Malik Journal of applied physics 64 (3), 1591-1593, 1988 | 100 | 1988 |
| Bipolar transistor with graded band-gap base JR Hayes, F Capasso, AC Gossard, RJ Malik, W Wiegmann Electronics Letters 19 (11), 410-411, 1983 | 100 | 1983 |
| Tunable long‐wavelength detectors using graded barrier quantum wells grown by electron beam source molecular beam epitaxy BF Levine, CG Bethea, VO Shen, RJ Malik Applied physics letters 57 (4), 383-385, 1990 | 96 | 1990 |
