| Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices W Li, J Zhou, S Cai, Z Yu, J Zhang, N Fang, T Li, Y Wu, T Chen, X Xie, ... Nature Electronics 2 (12), 563-571, 2019 | 241 | 2019 |
| Full Energy Spectra of Interface State Densities for n‐ and p‐type MoS2 Field‐Effect Transistors N Fang, S Toyoda, T Taniguchi, K Watanabe, K Nagashio Advanced Functional Materials 29 (49), 1904465, 2019 | 51 | 2019 |
| 2D Tunnel Field Effect Transistors (FETs) with a Stable Charge‐Transfer‐Type p+‐WSe2 Source J He, N Fang, K Nakamura, K Ueno, T Taniguchi, K Watanabe, ... Advanced Electronic Materials 4 (7), 1800207, 2018 | 46 | 2018 |
| Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor N Fang, K Nagashio Journal of Physics D: Applied Physics 51 (6), 065110, 2018 | 40 | 2018 |
| Accumulation-mode two-dimensional field-effect transistor: operation mechanism and thickness scaling rule N Fang, K Nagashio ACS applied materials & interfaces 10 (38), 32355-32364, 2018 | 34 | 2018 |
| Hexagonal boron nitride as an ideal substrate for carbon nanotube photonics N Fang, K Otsuka, A Ishii, T Taniguchi, K Watanabe, K Nagashio, YK Kato ACS Photonics 7 (7), 1773-1779, 2020 | 29 | 2020 |
| Deterministic transfer of optical-quality carbon nanotubes for atomically defined technology K Otsuka, N Fang, D Yamashita, T Taniguchi, K Watanabe, YK Kato Nature Communications 12 (1), 3138, 2021 | 21 | 2021 |
| Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics N Fang, K Nagashio, A Toriumi 2D Materials 4 (1), 015035, 2016 | 20 | 2016 |
| Subthreshold transport in mono-and multilayered MoS2 FETs F Nan, K Nagashio, A Toriumi Applied Physics Express 8 (6), 065203, 2015 | 19 | 2015 |
| Direct observation of electron capture and emission processes by the time domain charge pumping measurement of MoS2 FET K Taniguchi, N Fang, K Nagashio Applied Physics Letters 113 (13), 2018 | 13 | 2018 |
| Quantum-mechanical effect in atomically thin MoS2 FET N Fang, K Nagashio 2D Materials 7 (1), 014001, 2019 | 11 | 2019 |
| Quantization of mode shifts in nanocavities integrated with atomically thin sheets N Fang, D Yamashita, S Fujii, K Otsuka, T Taniguchi, K Watanabe, ... Advanced Optical Materials 10 (19), 2200538, 2022 | 9 | 2022 |
| SiC 衬底上石墨烯的性质, 改性及应用研究 方楠， 刘风， 刘小瑞， 廖瑞娴， 缪灵， 江建军 化学学报 70 (21), 2197, 2012 | 9 | 2012 |
| Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices W Li, J Zhou, S Cai, Z Yu, J Zhang, N Fang, T Li, Y Wu, T Chen, X Xie, ... arXiv preprint arXiv:1909.09753, 2019 | 2 | 2019 |
| Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures N Fang, YR Chang, S Fujii, D Yamashita, M Maruyama, Y Gao, CF Fong, ... Nature Communications 15 (1), 2871, 2024 | 1 | 2024 |
| Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes N Fang, YR Chang, D Yamashita, S Fujii, M Maruyama, Y Gao, CF Fong, ... Nature communications 14 (1), 8152, 2023 | 1 | 2023 |
| van der Waals Decoration of Ultra-High-Q Silica Microcavities for χ(2)–χ(3) Hybrid Nonlinear Photonics S Fujii, N Fang, D Yamashita, D Kozawa, CF Fong, YK Kato Nano Letters, 2024 | | 2024 |
| Hybrid silicon all-optical switching devices integrated with two-dimensional material D Yamashita, N Fang, S Fujii, YK Kato arXiv preprint arXiv:2403.18199, 2024 | | 2024 |
| Emerging second-order nonlinearity in two-dimensional material functionalized silica microcavities S Fujii, N Fang, D Yamashita, D Kozawa, CF Fong, Y Kato Bulletin of the American Physical Society, 2024 | | 2024 |
| Van der Waals functionalization of ultrahigh-Q silica microcavities for - hybrid nonlinear photonics S Fujii, N Fang, D Yamashita, D Kozawa, CF Fong, YK Kato arXiv preprint arXiv:2311.13916, 2023 | | 2023 |
Kosuke NagashioThe University of TokyoVerified email at material.t.u-tokyo.ac.jp
