| Iodine Vacancy Redistribution in Organic–Inorganic Halide Perovskite Films and Resistive Switching Effects X Zhu, J Lee, WD Lu Advanced Materials, 2017 | 242 | 2017 |
| A general memristor-based partial differential equation solver MA Zidan, YJ Jeong, J Lee, B Chen, S Huang, MJ Kushner, WD Lu Nature Electronic 1, 411-420, 2018 | 159 | 2018 |
| Experimental Demonstration of Feature Extraction and Dimensionality Reduction using Memristor Networks S Choi, JH Shin, J Lee, P Sheridan, WD Lu Nano Letters 17 (5), 3113–3118, 2017 | 152 | 2017 |
| On‐demand reconfiguration of nanomaterials: when electronics meets ionics J Lee, WD Lu Advanced Materials 30 (1), 1702770, 2018 | 144 | 2018 |
| Tuning ionic transport in memristive devices by graphene with engineered nanopores J Lee, C Du, K Sun, E Kioupakis, WD Lu Acs Nano 10 (3), 3571-3579, 2016 | 123 | 2016 |
| Tuning resistive switching characteristics of tantalum oxide memristors through Si doping S Kim, SH Choi, J Lee, WD Lu ACS nano 8 (10), 10262-10269, 2014 | 112 | 2014 |
| K-means data clustering with memristor networks YJ Jeong*, J Lee*, J Moon, JH Shin, WD Lu Nano letters 18 (7), 4447–4453, 2018 | 91 | 2018 |
| Oxide resistive memory with functionalized graphene as built‐in selector element Y Yang, J Lee, S Lee, CH Liu, Z Zhong, W Lu Advanced materials 26 (22), 3693-3699, 2014 | 71 | 2014 |
| Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-based RRAM J Lee, W Schell, X Zhu, E Kioupakis, WD Lu ACS applied materials & interfaces 11 (12), 11579-11586, 2019 | 64 | 2019 |
| Retention failure analysis of metal-oxide based resistive memory S Choi, J Lee, S Kim, WD Lu Applied Physics Letters 105 (11), 113510, 2014 | 47 | 2014 |
| Electronic and Optical Properties of Oxygen Vacancies in Amorphous Ta2O5 from First Principles J Lee, WD Lu, E Kioupakis Nanoscale 9, 1120-1127, 2017 | 43 | 2017 |
| Electronic properties of tantalum pentoxide polymorphs from first-principles calculations J Lee, W Lu, E Kioupakis Applied Physics Letters 105 (20), 202108, 2014 | 32 | 2014 |
| Rutile GeO2: An ultrawide-band-gap semiconductor with ambipolar doping S Chae, J Lee, KA Mengle, JT Heron, E Kioupakis Applied Physics Letters 114 (10), 102104, 2019 | 30 | 2019 |
| Quantitative, Dynamic TaOx Memristor/Resistive Random Access Memory Model SH Lee, J Moon, YJ Jeong, J Lee, X Li, H Wu, WD Lu ACS Applied Electronic Materials 2 (3), 701-709, 2020 | 26 | 2020 |
| Thermal conductivity of rutile germanium dioxide S Chae, KA Mengle, R Lu, A Olvera, N Sanders, J Lee, PFP Poudeu, ... Applied Physics Letters 117 (10), 102106, 2020 | 20 | 2020 |
| Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2 S Chae, K Mengle, K Bushick, J Lee, N Sanders, Z Deng, Z Mi, ... Applied Physics Letters 118 (26), 260501, 2021 | 17 | 2021 |
| Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High‐Entropy Oxides M Ahn, Y Park, SH Lee, S Chae, J Lee, JT Heron, E Kioupakis, WD Lu, ... Advanced Electronic Materials 7 (5), 2001258, 2021 | 11 | 2021 |
| Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-based Memristors J Lee, E Kioupakis, W Lu Bulletin of the American Physical Society 62, 2017 | | 2017 |
| Oxygen vacancies in amorphous-Ta2O5 from first-principles calculations J Lee, E Kioupakis, W Lu APS March Meeting Abstracts, 2016 | | 2016 |
| Electronic and optical properties of tantalum pentoxide polymorphs from first principles calculations J Lee, E Kioupakis, W Lu APS Meeting Abstracts 1, 45011, 2014 | | 2014 |
