Mathieu Luisier

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Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityPatvirtintas el. paštas purdue.edu
Andreas SchenkProfessor ETH ZurichPatvirtintas el. paštas iis.ee.ethz.ch
Alexandros EmborasLecturer, Department of Information Technology and Electrical Engineering, ETH-ZurichPatvirtintas el. paštas ethz.ch
Áron SzabóPatvirtintas el. paštas iis.ee.ethz.ch
Juerg LeutholdInstitute of Electromagnetic Fields (IEF), ETH Zurich, Zurich, SwitzerlandPatvirtintas el. paštas ethz.ch
Fabian DucryETH ZurichPatvirtintas el. paštas imec.be
Timothy BoykinUniversity of Alabama in HuntsvillePatvirtintas el. paštas uah.edu
Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityPatvirtintas el. paštas purdue.edu
Abhijeet paulGraduate Student Purdue University, Device Engineer GlobalfoundriesPatvirtintas el. paštas globalfoundries.com
Bojun ChengHKUST(GZ)Patvirtintas el. paštas hkust-gz.edu.cn
Youseung LeeSynopsys Switzerland LLCPatvirtintas el. paštas synopsys.com
Ping MaETH Zurich, SwitzerlandPatvirtintas el. paštas ief.ee.ethz.ch
Andreas PedersenViz-ITPatvirtintas el. paštas viz-it.consulting
Vanessa WoodProfessor, Department of Information Technology and Electrical Engineering, ETH ZürichPatvirtintas el. paštas ethz.ch
Cedric KlinkertETH ZurichPatvirtintas el. paštas iis.ee.ethz.ch
Hossein Bani-HashemianPatvirtintas el. paštas alumni.ethz.ch
Samuel AndermattETH ZürichPatvirtintas el. paštas student.ethz.ch
Hamilton Carrillo-NuñezSenior Software Engineer / Computational Science at Fluxim AGPatvirtintas el. paštas fluxim.com
Aaron FranklinAddy Professor of Electrical & Computer Engineering, Duke UniversityPatvirtintas el. paštas duke.edu
Jan AeschlimannETH ZürichPatvirtintas el. paštas iis.ee.ethz.ch

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Mathieu Luisier

ETH Zurich

Patvirtintas el. paštas iis.ee.ethz.ch

Computational nanoelectronics device modeling


Pavadinimas Rūšiuoti pagal šaltinius Rūšiuoti pagal metus Rūšiuoti pagal pavadinimą	Cituota Cituota	Metai
Sub-10 nm carbon nanotube transistor AD Franklin, M Luisier, SJ Han, G Tulevski, CM Breslin, L Gignac, ... Nano letters 12 (2), 758-762, 2012	1145	2012
Atomistic simulation of nanowires in the tight-binding formalism: From boundary conditions to strain calculations M Luisier, A Schenk, W Fichtner, G Klimeck Physical Review B—Condensed Matter and Materials Physics 74 (20), 205323, 2006	510	2006
Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering M Luisier, G Klimeck Physical Review B—Condensed Matter and Materials Physics 80 (15), 155430, 2009	279	2009
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ... Nature Electronics 4 (2), 98-108, 2021	273	2021
Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling M Luisier, G Klimeck Journal of Applied Physics 107 (8), 2010	226	2010
On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients C Jeong, R Kim, M Luisier, S Datta, M Lundstrom Journal of Applied Physics 107 (2), 2010	223	2010
Atomistic full-band design study of InAs band-to-band tunneling field-effect transistors M Luisier, G Klimeck IEEE Electron Device Letters 30 (6), 602-604, 2009	196	2009
Fast methods for computing selected elements of the Green’s function in massively parallel nanoelectronic device simulations A Kuzmin, M Luisier, O Schenk Euro-Par 2013 Parallel Processing: 19th International Conference, Aachen …, 2013	191	2013
Quantum transport in two-and three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green’s function formalism M Luisier, A Schenk, W Fichtner Journal of Applied physics 100 (4), 2006	178	2006
Soft surfaces of nanomaterials enable strong phonon interactions D Bozyigit, N Yazdani, M Yarema, O Yarema, WMM Lin, S Volk, ... Nature 531, 618-622, 2016	175	2016
Atomic Scale Plasmonic Switch A Emboras, J Niegemann, P Ma, C Haffner, A Pedersen, M Luisier, ... Nano letters 16, 709-714, 2016	164	2016
Performance comparisons of tunneling field-effect transistors made of InSb, carbon, and GaSb-InAs broken gap heterostructures M Luisier, G Klimeck 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009	127	2009
Ab initio simulation of single- and few-layer transistors: Effect of electron-phonon scattering Á Szabó, R Rhyner, M Luisier Physical Review B 92 (3), 035435, 2015	122	2015
One-dimensional edge contacts to a monolayer semiconductor A Jain, Á Szabó, M Parzefall, E Bonvin, T Taniguchi, K Watanabe, ... Nano letters 19 (10), 6914-6923, 2019	107	2019
Leakage-reduction design concepts for low-power vertical tunneling field-effect transistors S Agarwal, G Klimeck, M Luisier IEEE Electron Device Letters 31 (6), 621-623, 2010	104	2010
Performance comparisons of III–V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm) SH Park, Y Liu, N Kharche, MS Jelodar, G Klimeck, MS Lundstrom, ... IEEE Transactions on Electron Devices 59 (8), 2107-2114, 2012	102	2012
Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness M Luisier, G Klimeck Applied Physics Letters 94 (22), 2009	101	2009
Back-end, CMOS-compatible ferroelectric field-effect transistor for synaptic weights M Halter, L Bégon-Lours, V Bragaglia, M Sousa, BJ Offrein, S Abel, ... ACS applied materials & interfaces 12 (15), 17725-17732, 2020	98	2020
Tuning electron–phonon interactions in nanocrystals through surface termination N Yazdani, D Bozyigit, K Vuttivorakulchai, M Luisier, I Infante, V Wood Nano letters 18 (4), 2233-2242, 2018	98	2018
Ab-initio simulation of van der Waals MoTe2-SnS2 heterojunction TFETs for low power electronics A Szabo, S Koester, M Luisier IEEE Electron Device Letters, 2015	97	2015

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