Nikolay Ledentsov
Nikolay Ledentsov
VI Systems GmbH
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Cited by
Cited by
Quantum Dot Heterostructures
D Bimberg, M Grundmann, D, NN Ledentsov
Wiley, Chichester, 1998
Low threshold, large T0 injection laser emission from (InGa)As quantum dots
N Kirstaedter, NN Ledentsov, M Grundmann, D Bimberg, ѴM Ustinov, ...
Electron. Lett 30, 1416, 1994
Ultranarrow luminescence lines from single quantum dots
M Grundmann, J Christen, NN Ledentsov, J Böhrer, D Bimberg, ...
Physical Review Letters 74 (20), 4043, 1995
Spontaneous ordering of arrays of coherent strained islands
VA Shchukin, NN Ledentsov, PS Kop'ev, D Bimberg
Physical review letters 75 (16), 2968, 1995
InGaAs-GaAs quantum-dot lasers
D Bimberg, N Kirstaedter, NN Ledentsov, ZI Alferov, PS Kop'Ev, ...
IEEE Journal of selected topics in quantum electronics 3 (2), 196-205, 1997
Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
NN Ledentsov, VA Shchukin, M Grundmann, N Kirstaedter, J Böhrer, ...
Physical Review B 54 (12), 8743, 1996
Energy relaxation by multiphonon processes in InAs/GaAs quantum dots
R Heitz, M Veit, NN Ledentsov, A Hoffmann, D Bimberg, VM Ustinov, ...
Physical Review B 56 (16), 10435, 1997
InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, AY Egorov, AV Lunev, ...
Applied physics letters 74 (19), 2815-2817, 1999
Quantum dot heterostructures: fabrication, properties, lasers
NN Ledentsov, VM Ustinov, VA Shchukin, PS Kop’Ev, ZI Alferov, ...
Semiconductors 32, 343-365, 1998
Epitaxy of Nanostructures
VA Shchukin, NN Ledentsov, D Bimberg
Springer, 2004
Radiative recombination in type‐II GaSb/GaAs quantum dots
F Hatami, NN Ledentsov, M Grundmann, J Böhrer, F Heinrichsdorff, ...
Applied physics letters 67 (5), 656-658, 1995
Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers
N Kirstaedter, OG Schmidt, NN Ledentsov, D Bimberg, VM Ustinov, ...
Applied physics letters 69 (9), 1226-1228, 1996
Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces
R Nötzel, NN Ledentsov, L Däweritz, M Hohenstein, K Ploog
Physical review letters 67 (27), 3812, 1991
InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm
JA Lott, NN Ledentsov, VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, ...
Electronics Letters 36 (16), 1384-1385, 2000
Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots
R Heitz, M Grundmann, NN Ledentsov, L Eckey, M Veit, D Bimberg, ...
Applied Physics Letters 68 (3), 361-363, 1996
Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing
NN Ledentsov, M Grundmann, N Kirstaedter, O Schmidt, R Heitz, J Böhrer, ...
Solid-State Electronics 40 (1-8), 785-798, 1996
The role of Auger recombination in the temperature-dependent output characteristics of -doped 1.3 μm quantum dot lasers
S Fathpour, Z Mi, P Bhattacharya, AR Kovsh, SS Mikhrin, IL Krestnikov, ...
Applied Physics Letters 85 (22), 5164-5166, 2004
Semiconductor quantum-wire structures directly grown on high-index surfaces
R Nötzel, NN Ledentsov, L Däweritz, K Ploog, M Hohenstein
Physical Review B 45 (7), 3507, 1992
Structural characterization of (In, Ga) As quantum dots in a GaAs matrix
S Ruvimov, P Werner, K Scheerschmidt, U Gösele, J Heydenreich, ...
Physical Review B 51 (20), 14766, 1995
Quantum dot lasers: breakthrough in optoelectronics
D Bimberg, M Grundmann, F Heinrichsdorff, NN Ledentsov, VM Ustinov, ...
Thin solid films 367 (1-2), 235-249, 2000
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