Follow
Rachid Sbiaa
Rachid Sbiaa
Professor of Physics, Sultan Qaboos University
Verified email at squ.edu.om
Title
Cited by
Cited by
Year
Spintronics based random access memory: a review
S Bhatti, R Sbiaa, A Hirohata, H Ohno, S Fukami, SN Piramanayagam
Materials Today 20 (9), 530-548, 2017
9612017
Materials with perpendicular magnetic anisotropy for magnetic random access memory
R Sbiaa, H Meng, SN Piramanayagam
physica status solidi (RRL)–Rapid Research Letters 5 (12), 413-419, 2011
3152011
Annealing effects on CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy
H Meng, WH Lum, R Sbiaa, SYH Lua, HK Tan
Journal of applied physics 110 (3), 2011
1112011
Reduction of switching current by spin transfer torque effect in perpendicular anisotropy magnetoresistive devices
R Sbiaa, SYH Lua, R Law, H Meng, R Lye, HK Tan
Journal of Applied Physics 109 (7), 2011
1062011
Patterned media towards nano-bit magnetic recording: Fabrication and challenges
R Sbiaa, SN Piramanayagam
Recent patents on nanotechnology 1 (1), 29-40, 2007
932007
Composed free layer for stabilizing magnetoresistive head having low magnetostriction
R Sbiaa
US Patent App. 10/572,070, 2007
792007
Effects of Ta seed layer and annealing on magnetoresistance in CoFe∕ Pd-based pseudo-spin-valves with perpendicular anisotropy
R Law, R Sbiaa, T Liew, TC Chong
Applied Physics Letters 91 (24), 2007
722007
Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction
VB Naik, H Meng, R Sbiaa
Aip Advances 2 (4), 2012
672012
Spin transfer switching enhancement in perpendicular anisotropy magnetic tunnel junctions with a canted in-plane spin polarizer
R Sbiaa, R Law, EL Tan, T Liew
Journal of Applied Physics 105 (1), 2009
632009
Electric field effects in low resistance CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy
H Meng, R Sbiaa, MAK Akhtar, RS Liu, VB Naik, CC Wang
Applied Physics Letters 100 (12), 2012
602012
Recent developments in spin transfer torque MRAM
R Sbiaa, SN Piramanayagam
physica status solidi (RRL)–Rapid Research Letters 11 (12), 1700163, 2017
562017
Domain wall memory: Physics, materials, and devices
D Kumar, T Jin, R Sbiaa, M Klšui, S Bedanta, S Fukami, D Ravelosona, ...
Physics Reports 958, 1-35, 2022
542022
Effect of magnetostatic energy on domain structure and magnetization reversal in (Co/Pd) multilayers
R Sbiaa, Z Bilin, M Ranjbar, HK Tan, SJ Wong, SN Piramanayagam, ...
Journal of Applied Physics 107 (10), 2010
542010
Magnetoresistance Device
T Tahmasebi, SN Piramanayagam, R Sbiaa
US Patent App. 13/599,169, 2013
532013
Spin transfer torque switching for multi-bit per cell magnetic memory with perpendicular anisotropy
R Sbiaa, R Law, SYH Lua, EL Tan, T Tahmasebi, CC Wang, ...
Applied Physics Letters 99 (9), 2011
532011
Reduction in critical current for spin transfer switching in perpendicular anisotropy spin valves using an in-plane spin polarizer
R Law, EL Tan, R Sbiaa, T Liew, TC Chong
Applied Physics Letters 94 (6), 2009
492009
Staggered magnetic nanowire devices for effective domain-wall pinning in racetrack memory
M Al Bahri, B Borie, TL Jin, R Sbiaa, M Klšui, SN Piramanayagam
Physical Review Applied 11 (2), 024023, 2019
482019
Magnetoresistive device
Y Luo, R Sbiaa, YHS Lua
US Patent 9,343,128, 2016
472016
Composite free layer for stabilizing magnetoresistive head
R Sbiaa, I Sato
US Patent 7,495,867, 2009
462009
Granular type free layer and magnetic head
R Sbiaa, I Sato, H Morita
US Patent App. 10/998,660, 2006
442006
The system can't perform the operation now. Try again later.
Articles 1–20