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Efthimios Kaxiras
Efthimios Kaxiras
Professor of Pysics and Applied Physics, Harvard University
Verified email at physics.harvard.edu - Homepage
Title
Cited by
Cited by
Year
Unconventional superconductivity in magic-angle graphene superlattices
Y Cao, V Fatemi, S Fang, K Watanabe, T Taniguchi, E Kaxiras, ...
Nature 556 (7699), 43-50, 2018
69042018
Correlated insulator behaviour at half-filling in magic-angle graphene superlattices
Y Cao, V Fatemi, A Demir, S Fang, SL Tomarken, JY Luo, ...
Nature 556 (7699), 80-84, 2018
39802018
Optimized pseudopotentials
AM Rappe, KM Rabe, E Kaxiras, JD Joannopoulos
Physical Review B 41 (2), 1227, 1990
26851990
Surfactants in epitaxial growth
M Copel, MC Reuter, E Kaxiras, RM Tromp
Physical review letters 63 (6), 632, 1989
14041989
Hydrogen bonding and stacking interactions of nucleic acid base pairs: A density-functional-theory based treatment
M Elstner, P Hobza, T Frauenheim, S Suhai, E Kaxiras
The Journal of Chemical Physics 114 (12), 5149-5155, 2001
11962001
Concurrent coupling of length scales: methodology and application
JQ Broughton, FF Abraham, N Bernstein, E Kaxiras
Physical review B 60 (4), 2391, 1999
8761999
Atomic and electronic structure of solids
E Kaxiras
Atomic and Electronic Structure of Solids, 696, 2003
7372003
A QM/MM implementation of the self-consistent charge density functional tight binding (SCC-DFTB) method
Q Cui, M Elstner, E Kaxiras, T Frauenheim, M Karplus
The Journal of Physical Chemistry B 105 (2), 569-585, 2001
6902001
Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics
L Yu, YH Lee, X Ling, EJG Santos, YC Shin, Y Lin, M Dubey, E Kaxiras, ...
Nano letters 14 (6), 3055-3063, 2014
6732014
Properties of nitrogen-vacancy centers in diamond: the group theoretic approach
JR Maze, A Gali, E Togan, Y Chu, A Trifonov, E Kaxiras, MD Lukin
New Journal of Physics 13 (2), 025025, 2011
5912011
Interatomic potential for silicon defects and disordered phases
JF Justo, MZ Bazant, E Kaxiras, VV Bulatov, S Yip
Physical review B 58 (5), 2539, 1998
5801998
Dopant-assisted Concentration Enhancement of Substitutional Mn in Si and Ge
Z Zhang, W Zhu, E Kaxiras
Physical Review Letters 100 (2), 2008
5592008
Atomic and electronic reconstruction at the van der Waals interface in twisted bilayer graphene
H Yoo, R Engelke, S Carr, S Fang, K Zhang, P Cazeaux, SH Sung, ...
Nature materials 18 (5), 448-453, 2019
5562019
Environment-dependent interatomic potential for bulk silicon
MZ Bazant, E Kaxiras, JF Justo
Physical Review B 56 (14), 8542, 1997
5551997
Graphene nanoflakes with large spin
WL Wang, S Meng, E Kaxiras
Nano letters 8 (1), 241-245, 2008
5172008
Observation of the nonlinear Hall effect under time-reversal-symmetric conditions
Q Ma, SY Xu, H Shen, D MacNeill, V Fatemi, TR Chang, AM Mier Valdivia, ...
Nature 565 (7739), 337-342, 2019
4812019
Multiphysics simulations: Challenges and opportunities
DE Keyes, LC McInnes, C Woodward, W Gropp, E Myra, M Pernice, J Bell, ...
The International Journal of High Performance Computing Applications 27 (1 …, 2013
4742013
Dirac fermions and flat bands in the ideal kagome metal FeSn
M Kang, L Ye, S Fang, JS You, A Levitan, M Han, JI Facio, C Jozwiak, ...
Nature materials 19 (2), 163-169, 2020
4702020
Spanning the continuum to quantum length scales in a dynamic simulation of brittle fracture
FF Abraham, JQ Broughton, N Bernstein, E Kaxiras
Europhysics letters 44 (6), 783, 1998
4681998
MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
A Nourbakhsh, A Zubair, RN Sajjad, A Tavakkoli KG, W Chen, S Fang, ...
Nano letters 16 (12), 7798-7806, 2016
4432016
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