Jeremy Isaac Martin
Jeremy Isaac Martin
Director of Fuels Policy, Sr. Scientist, Union of Concerned Scientists
Verified email at - Homepage
Cited by
Cited by
Proper accounting for time increases crop-based biofuels’ greenhouse gas deficit versus petroleum
M O’Hare, RJ Plevin, JI Martin, AD Jones, A Kendall, E Hopson
Environmental Research Letters 4 (2), 024001, 2009
Mechanical and Dielectric Properties of Pure‐Silica‐Zeolite Low‐k Materials
Z Li, MC Johnson, M Sun, ET Ryan, DJ Earl, W Maichen, JI Martin, S Li, ...
Angewandte Chemie 118 (38), 6477-6480, 2006
Polymer brushes: Scaling, compression forces, interbrush penetration, and solvent size effects
JI Martin, ZG Wang
The Journal of Physical Chemistry 99 (9), 2833-2844, 1995
NH3/N2-plasma treatment to prevent organic ILD degradation
M Van Ngo, D Hopper, J Martin
US Patent 6,436,808, 2002
Examining the equity impacts of autonomous vehicles: a travel demand model approach
J Cohn, R Ezike, J Martin, K Donkor, M Ridgway, M Balding
Transportation research record 2673 (5), 23-35, 2019
Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
D Edelstein, H Rathore, C Davis, L Clevenger, A Cowley, T Nogami, ...
2004 IEEE International Reliability Physics Symposium. Proceedings, 316-319, 2004
Effects of polymer brush self-assembly on spreading and thin film stability
JI Martin, ZG Wang, M Schick
Langmuir 12 (20), 4950-4959, 1996
Dielectric formation to seal porosity of low dielectic constant (low k) materials after etch
P Besser, S Dakshina-Murthy, J Martin, J Smith, E Apelgren
US Patent App. 09/487,531, 2001
Effect of material properties on integration damage in organosilicate glass films
ET Ryan, J Martin, K Junker, J Wetzel, DW Gidley, J Sun
Journal of Materials Research 16, 3335-3338, 2001
Copper damascene with low-k capping layer and improved electromigration reliability
M Van Ngo, JI Martin, H Ruelke
US Patent 6,797,652, 2004
Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology
D Edelstein, C Davis, L Clevenger, M Yoon, A Cowley, T Nogami, ...
Proceedings of the IEEE 2004 International Interconnect Technology …, 2004
Integration of SiCN as a low/spl kappa/etch stop and Cu passivation in a high performance Cu/low/spl kappa/interconnect
J Martin, S Filipiak, T Stephens, F Huang, M Aminpur, J Mueller, ...
Proceedings of the IEEE 2002 International Interconnect Technology …, 2002
Perspective: Don't foul the water
J Martin
Nature 474 (7352), S17-S17, 2011
Resist trim process to define small openings in dielectric layers
S Dakshina-Murthy, PR Besser, JB Smith, EM Apelgren, C Zistl, JI Martin, ...
US Patent 6,500,755, 2002
Semiconductor component and method of manufacture
KS Sahota, J Martin, RJ Huang, JJ Xie
US Patent 6,927,113, 2005
Locally increasing sidewall density by ion implantation
EM Apelgren, C Zistl, JI Martin, PR Besser, F Cheung
US Patent 6,610,594, 2003
Impacts of US biodiesel mandates on world vegetable oil markets
J Cui, JI Martin
Energy Economics 65, 148-160, 2017
Method and test structure for characterizing sidewall damage in a semiconductor device
JI Martin, NJ Kepler, LL Zhao
US Patent 6,600,333, 2003
Graded oxide caps on low dielectric constant (low K) chemical vapor deposition (CVD) films
JI Martin, TY Tsui
US Patent 6,498,112, 2002
Competition between direct and concerted movements in surface diffusion with application to the Au (110) surface
LD Roelofs, JI Martin, R Sheth
Surface science 250 (1-3), 17-26, 1991
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