Semiconductor device RL Hoffman, GS Herman, PP Mardilovich US Patent 7,297,977, 2007 | 3790 | 2007 |
Combined binary oxide semiconductor device RL Hoffman, PP Mardilovich, GS Herman US Patent 7,282,782, 2007 | 3592 | 2007 |
System and method for forming conductive material on a substrate R Hoffman, G Herman, C Nelson US Patent App. 11/158,432, 2006 | 3580 | 2006 |
Multilayer device with organic and inorganic dielectric material P Mardilovich, R Hoffman, G Herman US Patent 8,587,093, 2013 | 3551 | 2013 |
Semiconductor device R Hoffman, G Herman US Patent App. 11/257,935, 2006 | 3543 | 2006 |
Transistor using an isovalent semiconductor oxide as the active channel layer RL Hoffman, GS Herman US Patent 7,462,862, 2008 | 3540 | 2008 |
A general route to printable high‐mobility transparent amorphous oxide semiconductors DH Lee, YJ Chang, GS Herman, CH Chang Advanced Materials 19 (6), 843-847, 2007 | 472 | 2007 |
Experimental Investigation of the Interaction of Water and Methanol with Anatase−TiO2(101) GS Herman, Z Dohnalek, N Ruzycki, U Diebold The Journal of Physical Chemistry B 107 (12), 2788-2795, 2003 | 429 | 2003 |
High-performance flexible zinc tin oxide field-effect transistors WB Jackson, RL Hoffman, GS Herman Applied physics letters 87 (19), 193503, 2005 | 327 | 2005 |
One step towards bridging the materials gap: surface studies of TiO2 anatase U Diebold, N Ruzycki, GS Herman, A Selloni Catalysis today 85 (2-4), 93-100, 2003 | 310 | 2003 |
Low-temperature, high-performance, solution-processed indium oxide thin-film transistors SY Han, GS Herman, C Chang Journal of the American Chemical Society 133 (14), 5166-5169, 2011 | 286 | 2011 |
Structure Determination of the Two-Domain ( ) Anatase Surface GS Herman, MR Sievers, Y Gao Physical review letters 84 (15), 3354, 2000 | 239 | 2000 |
High-performance, spin-coated zinc tin oxide thin-film transistors YJ Chang, DH Lee, GS Herman, CH Chang Electrochemical and solid-state letters 10 (5), H135, 2007 | 221 | 2007 |
Combinatorial approach to identification of catalysts for the photoelectrolysis of water M Woodhouse, GS Herman, BA Parkinson Chemistry of materials 17 (17), 4318-4324, 2005 | 202 | 2005 |
Method of making a semiconductor device having a multicomponent oxide RL Hoffman, GS Herman, PP Mardilovich US Patent 7,732,251, 2010 | 199 | 2010 |
Scanning tunneling microscopy investigation of the TiO 2 anatase (101) surface W Hebenstreit, N Ruzycki, GS Herman, Y Gao, U Diebold Physical Review B 62 (24), R16334, 2000 | 186 | 2000 |
Inkjet printed high-mobility indium zinc tin oxide thin film transistors DH Lee, SY Han, GS Herman, C Chang Journal of Materials Chemistry 19 (20), 3135-3137, 2009 | 165 | 2009 |
Semiconductor device having a metal oxide channel RL Hoffman, GS Herman, PP Mardilovich US Patent 8,203,144, 2012 | 160 | 2012 |
Hybridization and Bond-Orbital Components in Site-Specific X-Ray Photoelectron Spectra of Rutile T i O 2 JC Woicik, EJ Nelson, L Kronik, M Jain, JR Chelikowsky, D Heskett, ... Physical review letters 89 (7), 077401, 2002 | 154 | 2002 |
Solution‐processed HafSOx and ZircSOx inorganic thin‐film dielectrics and nanolaminates JT Anderson, CL Munsee, CM Hung, TM Phung, GS Herman, ... Advanced Functional Materials 17 (13), 2117-2124, 2007 | 148 | 2007 |