Theodore Kamins
Theodore Kamins
Adjunct Professor, Stanford University
Verified email at
Cited by
Cited by
Device electronics for integrated circuits
RS Muller, TI Kamins
John Wiley & Sons, 2002
Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes
G Medeiros-Ribeiro, AM Bratkovski, TI Kamins, DAA Ohlberg, RS Williams
Science 279 (5349), 353-355, 1998
Sequence-specific label-free DNA sensors based on silicon nanowires
Z Li, Y Chen, X Li, TI Kamins, K Nauka, RS Williams
nano letters 4 (2), 245-247, 2004
Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
YH Kuo, YK Lee, Y Ge, S Ren, JE Roth, TI Kamins, DAB Miller, JS Harris
Nature 437 (7063), 1334-1336, 2005
Hall mobility in chemically deposited polycrystalline silicon
TI Kamins
Journal of applied physics 42 (11), 4357-4365, 1971
Photovoltaic retinal prosthesis with high pixel density
K Mathieson, J Loudin, G Goetz, P Huie, L Wang, TI Kamins, L Galambos, ...
Nature photonics 6 (6), 391-397, 2012
Dopant segregation in polycrystalline silicon
MM Mandurah, KC Saraswat, CR Helms, TI Kamins
Journal of applied physics 51 (11), 5755-5763, 1980
Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms
TI Kamins, R Stanley Williams, DP Basile, T Hesjedal, JS Harris
Journal of Applied Physics 89 (2), 1008-1016, 2001
Deposition of three-dimensional Ge islands on Si (001) by chemical vapor deposition at atmospheric and reduced pressures
TI Kamins, EC Carr, RS Williams, SJ Rosner
Journal of Applied Physics 81 (1), 211-219, 1997
Photovoltaic restoration of sight with high visual acuity
H Lorach, G Goetz, R Smith, X Lei, Y Mandel, T Kamins, K Mathieson, ...
Nature medicine 21 (5), 476-482, 2015
Lithographic positioning of self-assembled Ge islands on Si (001)
TI Kamins, RS Williams
Applied Physics Letters 71 (9), 1201-1203, 1997
Increased photoluminescence of strain-reduced, high-Sn composition Ge1− xSnx alloys grown by molecular beam epitaxy
R Chen, H Lin, Y Huo, C Hitzman, TI Kamins, JS Harris
Applied physics letters 99 (18), 2011
Evolution of Ge islands on Si (001) during annealing
TI Kamins, G Medeiros-Ribeiro, DAA Ohlberg, R Stanley Williams
Journal of Applied Physics 85 (2), 1159-1171, 1999
Growth and structure of chemically vapor deposited Ge nanowires on Si substrates
TI Kamins, X Li, RS Williams, X Liu
Nano Letters 4 (3), 503-506, 2004
Structure and stability of low pressure chemically vapor‐deposited silicon films
TI Kamins, MM Mandurah, KC Saraswat
Journal of the Electrochemical Society 125 (6), 927, 1978
Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces
MS Islam, S Sharma, TI Kamins, RS Williams
Nanotechnology 15 (5), L5, 2004
Optical modulator on silicon employing germanium quantum wells
JE Roth, O Fidaner, RK Schaevitz, YH Kuo, TI Kamins, JS Harris, ...
Optics Express 15 (9), 5851-5859, 2007
A generalized description of the elastic properties of nanowires
A Heidelberg, LT Ngo, B Wu, MA Phillips, S Sharma, TI Kamins, JE Sader, ...
Nano letters 6 (6), 1101-1106, 2006
Chemical vapor deposition of Si nanowires nucleated by islands on Si
TI Kamins, RS Williams, Y Chen, YL Chang, YA Chang
Applied Physics Letters 76 (5), 562-564, 2000
Nano-graphoepitaxy of semiconductors for 3D integration
F Crnogorac, DJ Witte, Q Xia, B Rajendran, DS Pickard, Z Liu, A Mehta, ...
Microelectronic Engineering 84 (5-8), 891-894, 2007
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