Sangbum Kim
Sangbum Kim
Materials Science and Engineering, Seoul National University
Verified email at - Homepage
Cited by
Cited by
Phase change memory
HSP Wong, S Raoux, SB Kim, J Liang, JP Reifenberg, B Rajendran, ...
Proceedings of the IEEE 98 (12), 2201-2227, 2010
Neuromorphic computing using non-volatile memory
GW Burr, RM Shelby, A Sebastian, S Kim, S Kim, S Sidler, K Virwani, ...
Advances in Physics: X 2 (1), 89-124, 2017
Recent Progress in Phase-Change Memory Technology
GW Burr, MJ Brightsky, A Sebastian, HY Cheng, JY Wu, S Kim, NE Sosa, ...
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 6 (2 …, 2016
Tutorial: Brain-inspired computing using phase-change memory devices
A Sebastian, M Le Gallo, GW Burr, S Kim, M BrightSky, E Eleftheriou
Journal of Applied Physics 124 (11), 111101, 2018
Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array
SB Eryilmaz, D Kuzum, R Jeyasingh, SB Kim, M BrightSky, C Lam, ...
Frontiers in Neuroscience 8, 2014
NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning
S Kim, M Ishii, S Lewis, T Perri, M BrightSky, W Kim, R Jordan, GW Burr, ...
2015 IEEE International Electron Devices Meeting (IEDM), 17.1. 1-17.1. 4, 2015
Metal nitride keyhole or spacer phase change memory cell structures
MJ BrightSky, S Kim, CH Lam, NE Sosa
US Patent App. 10/056,546, 2018
Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films
JP Reifenberg, MA Panzer, SB Kim, AM Gibby, Y Zhang, S Wong, ...
Applied Physics Letters 91 (11), 111904, 2007
Thermal boundary resistance measurements for phase-change memory devices
JP Reifenberg, KW Chang, MA Panzer, S Kim, JA Rowlette, M Asheghi, ...
IEEE Electron Device Letters 31 (1), 56-58, 2009
Phonon and electron transport through Ge2Sb2Te5 films and interfaces bounded by metals
J Lee, E Bozorg-Grayeli, SB Kim, M Asheghi, HS Philip Wong, ...
Applied Physics Letters 102 (19), 191911, 2013
Self‐healing of a confined phase change memory device with a metallic surfactant layer
Y Xie, W Kim, Y Kim, S Kim, J Gonsalves, M BrightSky, C Lam, Y Zhu, ...
Advanced Materials 30 (9), 1705587, 2018
Dual‐Phase All‐Inorganic Cesium Halide Perovskites for Conducting‐Bridge Memory‐Based Artificial Synapses
SG Kim, Q Van Le, JS Han, H Kim, MJ Choi, SA Lee, TL Kim, SB Kim, ...
Advanced Functional Materials 29 (49), 1906686, 2019
Scaling the MOSFET gate dielectric: From high-k to higher-k?
MM Frank, SB Kim, SL Brown, J Bruley, M Copel, M Hopstaken, ...
Microelectronic Engineering 86 (7-9), 1603-1608, 2009
Resistance and threshold switching voltage drift behavior in phase-change memory and their temperature dependence at microsecond time scales studied using a micro-thermal stage
SB Kim, B Lee, M Asheghi, F Hurkx, JP Reifenberg, KE Goodson, ...
IEEE Transactions on Electron Devices 58 (3), 584-592, 2011
ALD-based confined PCM with a metallic liner toward unlimited endurance
W Kim, M BrightSky, T Masuda, N Sosa, S Kim, R Bruce, F Carta, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.2. 1-4.2. 4, 2016
Competing memristors for brain-inspired computing
SJ Kim, SB Kim, HW Jang
Iscience 24 (1), 101889, 2021
A thermally robust phase change memory by engineering the Ge/N concentration in (Ge, N)xSbyTezphase change material
HY Cheng, JY Wu, R Cheek, S Raoux, M BrightSky, D Garbin, S Kim, ...
2012 International Electron Devices Meeting, 31.1. 1-31.1. 4, 2012
A phase change memory cell with metallic surfactant layer as a resistance drift stabilizer
S Kim, N Sosa, M BrightSky, D Mori, W Kim, Y Zhu, K Suu, C Lam
Electron Devices Meeting (IEDM), 2013 IEEE International, 30.7. 1-30.7. 4, 2013
An integrated phase change memory cell with Ge nanowire diode for cross-point memory
Y Zhang, SB Kim, JP McVittie, H Jagannathan, JB Ratchford, ...
2007 IEEE Symposium on VLSI Technology, 98-99, 2007
Analysis of temperature in phase change memory scaling
SB Kim, HSP Wong
IEEE electron device letters 28 (8), 697-699, 2007
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