| Unusual properties of the fundamental band gap of InN J Wu, W Walukiewicz, KM Yu, JW Ager Iii, EE Haller, H Lu, WJ Schaff, ... Applied Physics Letters 80 (21), 3967-3969, 2002 | 2009 | 2002 |
| Effect of the location of Mn sites in ferromagnetic Ga 1− x Mn x As on its Curie temperature KM Yu, W Walukiewicz, T Wojtowicz, I Kuryliszyn, X Liu, Y Sasaki, ... Physical Review B 65 (20), 201303, 2002 | 1070 | 2002 |
| Small band gap bowing in In1− xGaxN alloys J Wu, W Walukiewicz, KM Yu, JW Ager, EE Haller, H Lu, WJ Schaff Applied Physics Letters 80 (25), 4741-4743, 2002 | 860 | 2002 |
| Superior radiation resistance of alloys: Full-solar-spectrum photovoltaic material system J Wu, W Walukiewicz, KM Yu, W Shan, JW Ager Iii, EE Haller, H Lu, ... Journal of Applied Physics 94 (10), 6477-6482, 2003 | 811 | 2003 |
| Observation of crystalline C 3 N 4 KM Yu, ML Cohen, EE Haller, WL Hansen, AY Liu, IC Wu Physical Review B 49 (7), 5034, 1994 | 646 | 1994 |
| Effects of the narrow band gap on the properties of InN J Wu, W Walukiewicz, W Shan, KM Yu, JW Ager III, EE Haller, H Lu, ... Physical Review B 66 (20), 201403, 2002 | 574 | 2002 |
| Temperature dependence of the fundamental band gap of InN J Wu, W Walukiewicz, W Shan, KM Yu, JW Ager, SX Li, EE Haller, H Lu, ... Journal of Applied Physics 94 (7), 4457-4460, 2003 | 528 | 2003 |
| Valence-band anticrossing in mismatched III-V semiconductor alloys K Alberi, J Wu, W Walukiewicz, KM Yu, OD Dubon, SP Watkins, CX Wang, ... Physical Review B—Condensed Matter and Materials Physics 75 (4), 045203, 2007 | 475 | 2007 |
| Valence band anticrossing in GaBixAs1− x K Alberi, OD Dubon, W Walukiewicz, KM Yu, K Bertulis, A Krotkus Applied Physics Letters 91 (5), 2007 | 387 | 2007 |
| Diluted II-VI oxide semiconductors with multiple band gaps KM Yu, W Walukiewicz, J Wu, W Shan, JW Beeman, MA Scarpulla, ... Physical Review Letters 91 (24), 246403, 2003 | 365 | 2003 |
| Engineering the electronic band structure for multiband solar cells N López, LA Reichertz, KM Yu, K Campman, W Walukiewicz Physical Review Letters 106 (2), 028701, 2011 | 355 | 2011 |
| Nature of room-temperature photoluminescence in ZnO W Shan, W Walukiewicz, JW Ager, KM Yu, HB Yuan, HP Xin, G Cantwell, ... Applied Physics Letters 86 (19), 2005 | 335 | 2005 |
| Structure and electronic properties of InN and In-rich group III-nitride alloys W Walukiewicz, JW Ager, KM Yu, Z Liliental-Weber, J Wu, SX Li, ... Journal of Physics D: Applied Physics 39 (5), R83, 2006 | 329 | 2006 |
| Large, nitrogen-induced increase of the electron effective mass in C Skierbiszewski, P Perlin, P Wisniewski, W Knap, T Suski, ... Applied Physics Letters 76 (17), 2409-2411, 2000 | 327 | 2000 |
| Nature of the fundamental band gap in alloys W Shan, W Walukiewicz, KM Yu, J Wu, JW Ager III, EE Haller, HP Xin, ... Applied Physics Letters 76 (22), 3251-3253, 2000 | 318 | 2000 |
| Fermi-level stabilization energy in group III nitrides SX Li, KM Yu, J Wu, RE Jones, W Walukiewicz, JW Ager III, W Shan, ... Physical Review B—Condensed Matter and Materials Physics 71 (16), 161201, 2005 | 297 | 2005 |
| Mechanistic insights into chemical and photochemical transformations of bismuth vanadate photoanodes FM Toma, JK Cooper, V Kunzelmann, MT McDowell, J Yu, DM Larson, ... Nature communications 7 (1), 12012, 2016 | 294 | 2016 |
| Evidence for -Type Doping of InN RE Jones, KM Yu, SX Li, W Walukiewicz, JW Ager, EE Haller, H Lu, ... Physical Review Letters 96 (12), 125505, 2006 | 290 | 2006 |
| Interaction of localized electronic states with the conduction band: Band anticrossing in II-VI semiconductor ternaries W Walukiewicz, W Shan, KM Yu, JW Ager III, EE Haller, I Miotkowski, ... Physical Review Letters 85 (7), 1552, 2000 | 286 | 2000 |
| Optical properties and electronic structure of InN and In-rich group III-nitride alloys W Walukiewicz, SX Li, J Wu, KM Yu, JW Ager III, EE Haller, H Lu, ... Journal of Crystal Growth 269 (1), 119-127, 2004 | 232 | 2004 |
