Randall Feenstra

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Jörg NeugebauerDirector, Max-Planck-Institut für EisenforschungVerified email at mpie.de
Joseph A. StroscioCenter for Nanoscale Science and Technology, National Institute of Standards and TechnologyVerified email at nist.gov
Nishtha SrivastavaIntel, Senior Process EngineerVerified email at andrew.cmu.edu
Gong Guthe University of Tennessee, KnoxvilleVerified email at utk.edu
Jerry WoodallUC DavisVerified email at ucdavis.edu
Marek SkowronskiCarnegie Mellon UniversityVerified email at cmu.edu
Joshua A. RobinsonProf. MatSE; Center for 2DLM; ATOMIC; 2D Crystal Consort.; The Pennsylvania State UniversityVerified email at psu.edu
Sergio C. de la BarreraAssistant Professor, University of TorontoVerified email at utoronto.ca
Wendy SarneyDEVCOM Army Research LaboratoryVerified email at army.mil
Yifan NieLawrence Berkeley National Laboratory, Synopsys Inc.Verified email at lbl.gov
Yu-Chuan LinMaterials Science and Engineering, National Yang Ming Chiao Tung University (NYCU)Verified email at nycu.edu.tw
Bhakti JariwalaPostdoc FellowVerified email at psu.edu
Luxmi PuriIntel CorporationVerified email at intel.com
Jun LiResearch Assistant, Physics, Carnegie Mellon UniversityVerified email at alumni.cmu.edu
Debdeep JenaCornell UniversityVerified email at cornell.edu
Yi Pan (潘毅）Professor , Xi'an Jiaotong UniversityVerified email at xjtu.edu.cn
Michael WidomProfessor of Physics, Carnegie Mellon UniversityVerified email at cmu.edu
Ivan VlassioukOak Ridge National LaboratoryVerified email at ornl.gov
Patricia MooneyProfessor Emerita of Physics, Simon Fraser UniversityVerified email at sfu.ca
Lourdes G Salamanca-RibaUniversity of MarylandVerified email at umd.edu

Randall Feenstra

Professor of Physics, Carnegie Mellon University

Verified email at cmu.edu - Homepage

surfaces and interfaces semiconductor materials 2D materials


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Tunneling spectroscopy of the Si (111) 2× 1 surface RM Feenstra, JA Stroscio, AP Fein Surface science 181 (1-2), 295-306, 1987	875	1987
Electronic structure of the Si (111) 2× 1 surface by scanning-tunneling microscopy JA Stroscio, RM Feenstra, AP Fein Physical review letters 57 (20), 2579, 1986	816	1986
Atom-selective imaging of the GaAs (110) surface RM Feenstra, JA Stroscio, J Tersoff, AP Fein Physical Review Letters 58 (12), 1192, 1987	791	1987
Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors RM Feenstra Physical Review B 50 (7), 4561, 1994	548	1994
Tunneling spectroscopy of the GaAs (110) surface RM Feenstra, JA Stroscio Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1987	540	1987
Reconstructions of the GaN (000 1) surface AR Smith, RM Feenstra, DW Greve, J Neugebauer, JE Northrup Physical review letters 79 (20), 3934, 1997	445	1997
Structure of GaN (0001): The laterally contracted Ga bilayer model JE Northrup, J Neugebauer, RM Feenstra, AR Smith Physical Review B 61 (15), 9932, 2000	428	2000
Determination of wurtzite GaN lattice polarity based on surface reconstruction AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ... Applied physics letters 72 (17), 2114-2116, 1998	407	1998
Adatom kinetics on and below the surface: The existence of a new diffusion channel J Neugebauer, TK Zywietz, M Scheffler, JE Northrup, H Chen, ... Physical Review Letters 90 (5), 056101, 2003	386	2003
Reconstructions of GaN (0001) and (0001) surfaces: Ga-rich metallic structures AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ... JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B MICROELECTRONICS AND NANOMETER …, 1998	319	1998
Local state density and long-range screening of adsorbed oxygen atoms on the GaAs (110) surface JA Stroscio, RM Feenstra, AP Fein Physical review letters 58 (16), 1668, 1987	307	1987
Real-space observation of π-bonded chains and surface disorder on Si (111) 2× 1 RM Feenstra, WA Thompson, AP Fein Physical review letters 56 (6), 608, 1986	297	1986
Geometric and electronic structure of antimony on the GaAs (110) surface studied by scanning tunneling microscopy P Mårtensson, RM Feenstra Physical Review B 39 (11), 7744, 1989	294	1989
Inversion of wurtzite GaN (0001) by exposure to magnesium V Ramachandran, RM Feenstra, WL Sarney, L Salamanca-Riba, ... Applied Physics Letters 75 (6), 808-810, 1999	276	1999
Preparation of atomically flat surfaces on silicon carbide using hydrogen etching V Ramachandran, MF Brady, AR Smith, RM Feenstra, DW Greve Journal of Electronic Materials 27 (4), 308-312, 1998	269	1998
Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs RM Feenstra, JM Woodall, GD Pettit Physical review letters 71 (8), 1176, 1993	260	1993
Graphene nucleation density on copper: fundamental role of background pressure I Vlassiouk, S Smirnov, M Regmi, SP Surwade, N Srivastava, R Feenstra, ... The Journal of Physical Chemistry C 117 (37), 18919-18926, 2013	256	2013
Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers KL Kavanagh, MA Capano, LW Hobbs, JC Barbour, PMJ Maree, W Schaff, ... Journal of applied physics 64 (10), 4843-4852, 1988	255	1988
Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe₂ C Zhang, Y Chen, A Johnson, MY Li, LJ Li, PC Mende, RM Feenstra, ... Nano letters 15 (10), 6494-6500, 2015	245	2015
Influence of misfit dislocations on the surface morphology of Si_1−xGe_x films MA Lutz, RM Feenstra, FK LeGoues, PM Mooney, JO Chu Applied Physics Letters 66 (6), 724-726, 1995	240	1995

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