Eric Joseph
Eric Joseph
Principal Research Staff Member, IBM Research
Verified email at
Cited by
Cited by
Write strategies for 2 and 4-bit multi-level phase-change memory
T Nirschl, JB Philipp, TD Happ, GW Burr, B Rajendran, MH Lee, A Schrott, ...
2007 IEEE International Electron Devices Meeting, 461-464, 2007
Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide
T Standaert, C Hedlund, EA Joseph, GS Oehrlein, TJ Dalton
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 22 (1 …, 2004
Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm
S Bangsaruntip, A Majumdar, GM Cohen, SU Engelmann, Y Zhang, ...
2010 symposium on VLSI technology, 21-22, 2010
Novel one-mask self-heating pillar phase change memory
T Happ, M Breitwisch, A Schrott, J Philipp, M Lee, R Cheek, T Nirschl, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 120-121, 2006
Ultra-thin phase-change bridge memory device using GeSb
YC Chen, CT Rettner, S Raoux, GW Burr, SH Chen, RM Shelby, ...
2006 International Electron Devices Meeting, 1-4, 2006
Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma
D Metzler, RL Bruce, S Engelmann, EA Joseph, GS Oehrlein
Journal of Vacuum Science & Technology A 32 (2), 2014
Selective sputtering for pattern transfer
M Hoinkis, H Miyazoe, E Joseph
US Patent 9,493,879, 2016
Copper residue chamber clean
M Hoinkis, C Yan, H Miyazoe, E Joseph
US Patent 9,114,438, 2015
Two-Dimensional Pattern Formation Using Graphoepitaxy of PS-b-PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication
H Tsai, JW Pitera, H Miyazoe, S Bangsaruntip, SU Engelmann, CC Liu, ...
ACS nano 8 (5), 5227-5232, 2014
Method for manufacturing a phase change memory device with pillar bottom electrode
HL Lung, CF Chen, YC Chen, SH Chen, CH Lam, EA Joseph, AG Schrott, ...
US Patent 8,138,028, 2012
Novel lithography-independent pore phase change memory
M Breitwisch, T Nirschl, CF Chen, Y Zhu, MH Lee, M Lamorey, GW Burr, ...
2007 IEEE Symposium on VLSI Technology, 100-101, 2007
Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
D Metzler, C Li, S Engelmann, RL Bruce, EA Joseph, GS Oehrlein
Journal of Vacuum Science & Technology A 34 (1), 2016
A high performance phase change memory with fast switching speed and high temperature retention by engineering the GexSbyTez phase change material
HY Cheng, TH Hsu, S Raoux, JY Wu, PY Du, M Breitwisch, Y Zhu, EK Lai, ...
2011 International Electron Devices Meeting, 3.4. 1-3.4. 4, 2011
Transition-metal-oxide-based resistance-change memories
SF Karg, GI Meijer, JG Bednorz, CT Rettner, AG Schrott, EA Joseph, ...
IBM Journal of Research and Development 52 (4.5), 481-492, 2008
Uniform critical dimension size pore for pcram application
MJ Breitwisch, RW Cheek, CH Lam, HL Lung, EA Joseph, AG Schrott
US Patent App. 11/620,671, 2008
A three-terminal spin-torque-driven magnetic switch
JZ Sun, MC Gaidis, EJ O’Sullivan, EA Joseph, G Hu, DW Abraham, ...
Applied physics letters 95 (8), 2009
Fabrication of sub-20 nm nanopore arrays in membranes with embedded metal electrodes at wafer scales
J Bai, D Wang, S Nam, H Peng, R Bruce, L Gignac, M Brink, E Kratschmer, ...
Nanoscale 6 (15), 8900-8906, 2014
Large-scale (512kbit) integration of multilayer-ready access-devices based on mixed-ionic-electronic-conduction (MIEC) at 100% yield
GW Burr, K Virwani, RS Shenoy, A Padilla, M BrightSky, EA Joseph, ...
2012 Symposium on VLSI Technology (VLSIT), 41-42, 2012
Phase change memory with tapered heater
M Breitwisch, T Happ, EA Joseph, HL Lung, JB Philipp
US Patent 7,906,368, 2011
Method of Forming Phase Change Memory Cell With Reduced Switchable Volume
MJ Breitwisch, RW Cheek, EA Joseph, CH Lam, HL Lung, AG Schrott
US Patent App. 11/741,781, 2008
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