Saulius Nargelas
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Luminescence rise time in self-activated PbWO4 and Ce-doped Gd3Al2Ga3O12 scintillation crystals
E Auffray, R Augulis, A Borisevich, V Gulbinas, A Fedorov, M Korjik, ...
Journal of Luminescence 178, 54-60, 2016
Subpicosecond luminescence rise time in magnesium codoped GAGG: Ce scintillator
G Tamulaitis, A Vaitkevičius, S Nargelas, R Augulis, V Gulbinas, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2017
Two regimes of carrier diffusion in vapor-deposited lead-halide perovskites
P Ščajev, R Aleksiejunas, S Miasojedovas, S Nargelas, M Inoue, ...
The Journal of Physical Chemistry C 121 (39), 21600-21609, 2017
Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique
S Nargelas, K Jarašiūnas, K Bertulis, V Pačebutas
Applied Physics Letters 98 (8), 082115, 2011
Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures
R Aleksiejūnas, K Gelžinytė, S Nargelas, K Jarašiūnas, M Vengris, ...
Applied Physics Letters 104 (2), 022114, 2014
Excitation Transfer Engineering in Ce‐Doped Oxide Crystalline Scintillators by Codoping with Alkali‐Earth Ions
E Auffray, R Augulis, A Fedorov, G Dosovitskiy, L Grigorjeva, V Gulbinas, ...
physica status solidi (a) 215 (7), 1700798, 2018
Improvement of the Time Resolution of Radiation Detectors Based on Gd3Al2Ga3O12 Scintillators With SiPM Readout
G Tamulaitis, A Vasil’ev, M Korzhik, A Mazzi, A Gola, S Nargelas, ...
IEEE Transactions on Nuclear Science 66 (7), 1879-1888, 2019
Measurement of non-equilibrium carriers dynamics in Ce-doped YAG, LuAG and GAGG crystals with and without Mg-codoping
MT Lucchini, O Buganov, E Auffray, P Bohacek, M Korjik, D Kozlov, ...
Journal of Luminescence 194, 1-7, 2018
Free carrier absorption in self-activated PbWO4 and Ce-doped Y3 (Al0. 25Ga0. 75) 3O12 and Gd3Al2Ga3O12 garnet scintillators
E Auffray, M Korjik, MT Lucchini, S Nargelas, O Sidletskiy, G Tamulaitis, ...
Optical Materials 58, 461-465, 2016
Improvement of response time in GAGG: Ce scintillation crystals by magnesium codoping
G Tamulatis, G Dosovitskiy, A Gola, M Korjik, A Mazzi, S Nargelas, ...
Journal of Applied Physics 124 (21), 215907, 2018
Impact of diffusivity to carrier recombination rate in nitride semiconductors: from bulk GaN to (In, Ga) N quantum wells
R Aleksiejūnas, P Ščajev, S Nargelas, T Malinauskas, A Kadys, ...
Japanese Journal of Applied Physics 52 (8S), 08JK01, 2013
Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer
K Jarašiūnas, S Nargelas, R Aleksiejūnas, S Miasojedovas, M Vengris, ...
Journal of Applied Physics 113 (10), 103701, 2013
Dynamics of free carrier absorption in InN layers
S Nargelas, R Aleksiejūnas, M Vengris, T Malinauskas, K Jarašiūnas, ...
Applied Physics Letters 95 (16), 162103, 2009
Layer thickness dependent carrier recombination rate in HVPE GaN
K Jarašiūnas, T Malinauskas, S Nargelas, V Gudelis, JV Vaitkus, ...
physica status solidi (b) 247 (7), 1703-1706, 2010
Application of two-photon absorption in PWO scintillator for fast timing of interaction with ionizing radiation
E Auffray, O Buganov, M Korjik, A Fedorov, S Nargelas, G Tamulaitis, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2015
Improvement of the timing properties of Ce-doped oxyorthosilicate LYSO scintillating crystals
G Tamulaitis, E Auffray, A Gola, M Korzhik, A Mazzi, V Mechinski, ...
Journal of Physics and Chemistry of Solids 139, 109356, 2020
Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells
T Malinauskas, A Kadys, T Grinys, S Nargelas, R Aleksiejūnas, ...
Gallium Nitride Materials and Devices Vii 8262, 82621S, 2012
Dynamics of nonequilibrium carrier decay in AlGaN epitaxial layers with high aluminum content
T Saxena, M Shur, S Nargelas, Ž Podlipskas, R Aleksiejūnas, ...
Optics express 23 (15), 19646-19655, 2015
Carrier dynamics in blue and green emitting InGaN MQWs
R Aleksiejūnas, K Nomeika, S Miasojedovas, S Nargelas, T Malinauskas, ...
physica status solidi (b) 252 (5), 977-982, 2015
Recombination and diffusion processes in polar and nonpolar bulk GaN investigated by time-resolved photoluminescence and nonlinear optical techniques
K Jarašiūnas, P Ščajev, S Nargelas, R Aleksiejūnas, J Leach, T Paskova, ...
Gallium Nitride Materials and Devices VII 8262, 82620G, 2012
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