John L Lyons

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Chris G. Van de WalleProfessor of Materials, University of California, Santa BarbaraVerified email at mrl.ucsb.edu
Anderson JanottiUniversity of DelawareVerified email at udel.edu
Alexander L. EfrosNaval Research LaboratoryVerified email at nrl.navy.mil
Peter C. SercelCalifornia Institute of TechnologyVerified email at caltech.edu
Audrius AlkauskasCenter for Physical Sciences and Technology (FTMC), Vilnius, LithuaniaVerified email at ftmc.lt
Joel B VarleyLawrence Livermore National LaboratoryVerified email at llnl.gov
Cyrus E. DreyerStony Brook University and Flatiron CCQVerified email at stonybrook.edu
Darshana WickramaratneCenter for Computational Materials Science, US Naval Research LaboratoryVerified email at nrl.navy.mil
Roman VaxenburgHoward Hughes Medical InstituteVerified email at janelia.hhmi.org
Hartwin PeelaersUniversity of KansasVerified email at ku.edu
Minseok ChoiInha UniversityVerified email at inha.ac.kr
Maksym V. KovalenkoETH Zurich and EmpaVerified email at ethz.ch
Rainer MahrtIBM Research Zurich LaboratoryVerified email at zurich.ibm.com
Dr. Georgian NedelcuUniversity of Groningen, Zernike Institute for Advanced MaterialsVerified email at rug.nl
John G. MichopoulosNaval Research Laboratory, Computational Multiphysics System Lab, Code 6394Verified email at nrl.navy.mil
Gabriele RainòETH ZurichVerified email at ethz.ch
Michael A. BeckerMax Planck Institute for the Science of LightVerified email at mpl.mpg.de
Thilo StöferleIBM Research - ZurichVerified email at zurich.ibm.com
Michael MehlDuke UniversityVerified email at duke.edu
Marko J. TadjerNaval Research LaboratoryVerified email at nrl.navy.mil

John L Lyons

Center for Computational Materials Science, Naval Research Laboratory

Verified email at nrl.navy.mil - Homepage

materials semiconductors first-principles calculations defects


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Bright triplet excitons in caesium lead halide perovskites MA Becker, R Vaxenburg, G Nedelcu, PC Sercel, A Shabaev, MJ Mehl, ... Nature 553 (7687), 189-193, 2018	690	2018
Carbon impurities and the yellow luminescence in GaN JL Lyons, A Janotti, CG Van de Walle Applied Physics Letters 97, 152108, 2010	661	2010
Why nitrogen cannot lead to p-type conductivity in ZnO JL Lyons, A Janotti, CG Van de Walle Applied Physics Letters 95, 252105, 2009	447	2009
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN JL Lyons, A Janotti, CG Van de Walle Physical Review B 89 (3), 035204, 2014	400	2014
Shallow versus deep nature of Mg acceptors in nitride semiconductors J Lyons, A Janotti, C G Van de Walle Physical Review Letters 108, 156403, 2012	264	2012
Computationally predicted energies and properties of defects in GaN JL Lyons, CG Van de Walle NPJ Computational Materials 3 (1), 12, 2017	200	2017
First-principles calculations of luminescence spectrum line shapes for defects in semiconductors: the example of GaN and ZnO A Alkauskas, JL Lyons, D Steiauf, CG Van de Walle Physical review letters 109 (26), 267401, 2012	183	2012
A survey of acceptor dopants for β-Ga2O3 JL Lyons Semiconductor science and technology 33 (5), 05LT02, 2018	144	2018
Hybrid functional calculations of D X centers in AlN and GaN L Gordon, JL Lyons, A Janotti, CG Van de Walle Physical Review B 89 (8), 085204, 2014	132	2014
Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga₂O₃ MJ Tadjer, JL Lyons, N Nepal, JA Freitas, AD Koehler, GM Foster ECS Journal of Solid State Science and Technology 8 (7), Q3187-Q3194, 2019	130	2019
Deep acceptors and their diffusion in Ga₂O₃ H Peelaers, JL Lyons, JB Varley, CG Van de Walle APL Materials 7 (2), 022519, 2019	124	2019
First‐principles theory of acceptors in nitride semiconductors JL Lyons, A Alkauskas, A Janotti, CG Van de Walle physica status solidi (b) 252 (5), 900-908, 2015	119	2015
Exciton fine structure in perovskite nanocrystals PC Sercel, JL Lyons, D Wickramaratne, R Vaxenburg, N Bernstein, ... Nano letters 19 (6), 4068-4077, 2019	101	2019
Impact of carbon and nitrogen impurities in high-κ dielectrics on metal-oxide-semiconductor devices M Choi, JL Lyons, A Janotti, CG Van de Walle Applied Physics Letters 102 (14), 142902, 2013	101	2013
Controlling the conductivity of InN CG Van de Walle, JL Lyons, A Janotti physica status solidi (a) 207 (5), 1024-1036, 2010	97	2010
The role of oxygen-related defects and hydrogen impurities in HfO2 and ZrO2 JL Lyons, A Janotti, CG Van de Walle Microelectronic Engineering, 2011	93	2011
Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters CE Dreyer, A Alkauskas, JL Lyons, JS Speck, CG Van de Walle Applied Physics Letters 108 (14), 141101, 2016	92	2016
Role of Si and Ge as impurities in ZnO JL Lyons, A Janotti, CG Van de Walle Physical Review B 80 (20), 205113, 2009	88	2009
First-principles characterization of native-defect-related optical transitions in ZnO JL Lyons, JB Varley, D Steiauf, A Janotti, CG Van de Walle Journal of Applied Physics 122 (3), 035704, 2017	83	2017
Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors A Alkauskas, CE Dreyer, JL Lyons, CG Van de Walle Physical Review B 93 (20), 201304, 2016	78	2016

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