Nibir Kumar Dhar
Nibir Kumar Dhar
Professor of Electrical Engineering
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A perspective on nanowire photodetectors: current status, future challenges, and opportunities
VJ Logeeswaran, J Oh, AP Nayak, AM Katzenmeyer, KH Gilchrist, ...
IEEE Journal of selected topics in quantum electronics 17 (4), 1002-1032, 2011
Advances in infrared detector array technology
NK Dhar, R Dat, AK Sood
Optoelectronics-Advanced Materials and Devices 7, 149-188, 2013
Optically transparent antennas and filters: A smart city concept to alleviate infrastructure and network capacity challenges
RB Green, M Guzman, N Izyumskaya, B Ullah, S Hia, J Pitchford, ...
IEEE Antennas and propagation magazine 61 (3), 37-47, 2019
Dislocation reduction in CdTe/Si by molecular beam epitaxy through in-situ annealing
Y Chen, S Farrell, G Brill, P Wijewarnasuriya, N Dhar
Journal of Crystal Growth 310 (24), 5303-5307, 2008
Device physics and focal plane array applications of QWIP and MCT
MZ Tidrow, WA Beck, WW Clark III, HK Pollehn, JW Little, NK Dhar, ...
Photodetectors: Materials and Devices IV 3629, 100-113, 1999
Heteroepitaxy of CdTe on {211} Si using crystallized amorphous ZnTe templates
NK Dhar, CEC Wood, A Gray, HY Wei, L Salamanca‐Riba, JH Dinan
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
CdZnTe heteroepitaxy on 3 ″(112) Si: Interface, surface, and layer characteristics
NK Dhar, PR Boyd, M Martinka, JH Dinan, LA Almeida, N Goldsman
Journal of Electronic Materials 29, 748-753, 2000
MBE growth of CdSeTe/Si composite substrate for long-wavelength IR HgCdTe applications
YP Chen, G Brill, NK Dhar
Journal of crystal growth 252 (1-3), 270-274, 2003
MBE growth and device processing of MWIR HgCdTe on large area Si substrates
G Brill, S Velicu, P Boieriu, Y Chen, NK Dhar, TS Lee, Y Selamet, ...
Journal of electronic materials 30, 717-722, 2001
Heteroepitaxy of CdTe on {211} Si substrates by molecular beam epitaxy
A Million, NK Dhar, JH Dinan
Journal of crystal growth 159 (1-4), 76-80, 1996
Atomically thin layers of B–N–C–O with tunable composition
B Ozturk, A de-Luna-Bugallo, E Panaitescu, AN Chiaramonti, F Liu, ...
Science advances 1 (6), e1500094, 2015
Planar -on- HgCdTe heterostructure infrared photodiodes on Si substrates by molecular beam epitaxy
NK Dhar, M Zandian, JG Pasko, JM Arias, JH Dinan
Applied physics letters 70 (13), 1730-1732, 1997
Surface morphology and defect formation mechanisms for HgCdTe (211) B grown by molecular beam epitaxy
Y Chang, CR Becker, CH Grein, J Zhao, C Fulk, T Casselman, R Kiran, ...
Journal of electronic materials 37, 1171-1183, 2008
Investigation of photons in HgCdTe using Raman Scattering and far-infrared reflectivity
PM Amirtharaj, NK Dhar, J Baars, H Seelewind
Semiconductor science and technology 5 (3S), S68, 1990
Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance
M Carmody, JG Pasko, D Edwall, M Daraselia, LA Almeida, J Molstad, ...
Journal of electronic materials 33, 531-537, 2004
AlxGa1−xN Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than
J Kim, MH Ji, T Detchprohm, JH Ryou, RD Dupuis, AK Sood, NK Dhar
IEEE Photonics Technology Letters 27 (6), 642-645, 2015
Multispectral EO/IR sensor model for evaluating UV, visible, SWIR, MWIR and LWIR system performance
AK Sood, R Richwine, YR Puri, NK Dhar, DL Polla, PS Wijewarnasuriya
Infrared Imaging Systems: Design, Analysis, Modeling, and Testing XX 7300 …, 2009
Molecular beam epitaxial growth and characterization of Cd-based II–VI wide-bandgap compounds on Si substrates
G Brill, Y Chen, PM Amirtharaj, W Sarney, D Chandler-Horowitz, NK Dhar
Journal of electronic materials 34, 655-661, 2005
Modeling of LWIR HgCdTe Auger-suppressed infrared photodiodes under nonequilibrium operation
PY Emelie, S Velicu, CH Grein, JD Phillips, PS Wijewarnasuriya, NK Dhar
Journal of electronic materials 37, 1362-1368, 2008
Electrooptical characterization of MWIR InAsSb detectors
AI D’souza, E Robinson, AC Ionescu, D Okerlund, TJ De Lyon, H Sharifi, ...
Journal of electronic materials 41, 2671-2678, 2012
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