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Saud Bin Anooz
Saud Bin Anooz
Ph.D
Verified email at ikz-berlin.de - Homepage
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Cited by
Year
Lateral 1.8 kV -Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit
K Tetzner, EB Treidel, O Hilt, A Popp, SB Anooz, G Wagner, A Thies, ...
IEEE Electron Device Letters 40 (9), 1503-1506, 2019
1292019
Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting
R Schewski, K Lion, A Fiedler, C Wouters, A Popp, SV Levchenko, ...
Apl Materials 7 (2), 2019
1032019
Influence of Strontium Doping on the Indirect Band Gap and Optical Constants of Ammonium Zinc Chloride Crystals
MA Gaffar, AA El-Fadl, SB Anooz
Physica B 327, 43, 2003
1022003
Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE
S Bin Anooz, R Grüneberg, C Wouters, R Schewski, M Albrecht, A Fiedler, ...
Applied Physics Letters 116 (18), 2020
772020
Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides
Z Galazka, S Ganschow, K Irmscher, D Klimm, M Albrecht, R Schewski, ...
Progress in Crystal Growth and Characterization of Materials 67 (1), 100511, 2020
592020
Strain-induced phase transitions in epitaxial NaNbO3 thin films grown by metal–organic chemical vapour deposition
J Schwarzkopf, M Schmidbauer, T Remmele, A Duk, A Kwasniewski, ...
Journal of Applied Crystallography 45 (5), 1015-1023, 2012
492012
Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method
Z Galazka, S Ganschow, P Seyidov, K Irmscher, M Pietsch, TS Chou, ...
Applied Physics Letters 120 (15), 2022
392022
Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE
SB Anooz, R Grüneberg, TS Chou, A Fiedler, K Irmscher, C Wouters, ...
Journal of Physics D: Applied Physics 54 (3), 034003, 2020
392020
Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices
K Tetzner, O Hilt, A Popp, SB Anooz, J Würfl
Microelectronics Reliability 114, 113951, 2020
352020
Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE
TS Chou, P Seyidov, S Bin Anooz, R Grüneberg, TTV Tran, K Irmscher, ...
AIP Advances 11 (11), 2021
312021
The solid state phase transformation of potassium sulfate
SB Anooz, R Bertram, D Klimm
Solid state communications 141 (9), 497-501, 2007
282007
Exploiting the Nanostructural Anisotropy of β-Ga2O3 to Demonstrate Giant Improvement in Titanium/Gold Ohmic Contacts
MH Lee, TS Chou, S Bin Anooz, Z Galazka, A Popp, RL Peterson
ACS nano 16 (8), 11988-11997, 2022
262022
Optical Absorption Spectra and Related Parameters of Ammonium Zinc Chloride Crystal in the Antiferroelectric and commensurate phases
MA Gaffar, AA El-Fadl, SB Anooz
Cryst. Res. Technol. 38, 798, 2003
232003
Optical properties of pure and metal ions doped ammonium sulfate single crystals
AA El-Fadl, SB Anooz
Crystal Research and Technology 41, 487, 2006
222006
SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes
K Tetzner, K Egbo, M Klupsch, RS Unger, A Popp, TS Chou, SB Anooz, ...
Applied Physics Letters 120 (11), 2022
192022
Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy
S Bin Anooz, A Popp, R Grüneberg, C Wouters, R Schewski, ...
Journal of Applied Physics 125 (19), 2019
192019
Impact of epitaxial strain on the ferromagnetic transition temperature of SrRuO3 thin films
R Dirsyte, J Schwarzkopf, M Schmidbauer, G Wagner, K Irmscher, ...
Thin Solid Films 519 (19), 6264-6268, 2011
182011
Approaching the high intrinsic electrical resistivity of NbO2 in epitaxially grown films
J Stoever, JE Boschker, S Bin Anooz, M Schmidbauer, P Petrik, ...
Applied Physics Letters 116 (18), 2020
142020
Effects of post‐growth annealing on physical properties of SrRuO3 thin film grown by MOCVD
SB Anooz, J Schwarzkopf, R Dirsyte, G Wagner, R Fornari
physica status solidi (a) 207 (11), 2492-2498, 2010
132010
Si doping mechanism in MOVPE-grown (100) β-Ga2O3 films
TS Chou, S Bin Anooz, R Grüneberg, N Dropka, J Rehm, TTV Tran, ...
Applied Physics Letters 121 (3), 2022
112022
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