| GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications ME Kim, AK Oki, GM Gorman, DK Umemoto, JB Camou IEEE Transactions on Microwave Theory and Techniques 37 (9), 1286-1303, 1989 | 171 | 1989 |
| A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth KW Kobayashi, AK Oki, LT Tran, JC Cowles, A Gutierrez-Aitken, ... IEEE Journal of solid-state circuits 34 (9), 1225-1232, 1999 | 162 | 1999 |
| Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting YC Chou, D Leung, I Smorchkova, M Wojtowicz, R Grundbacher, ... Microelectronics Reliability 44 (7), 1033-1038, 2004 | 113 | 2004 |
| A 6-GHz integrated phase-locked loop using AlGaAs/GaAs heterojunction bipolar transistors AW Buchwald, KW Martin, AK Oki, KW Kobayashi IEEE journal of solid-state circuits 27 (12), 1752-1762, 1992 | 105 | 1992 |
| A novel HBT distributed amplifier design topology based on attenuation compensation techniques KW Kobayashi, R Esfandiari, AK Oki IEEE transactions on microwave theory and techniques 42 (12), 2583-2589, 1994 | 100 | 1994 |
| Ultrahigh-speed direct digital synthesizer using InP DHBT technology A Gutierrez-Aitken, J Matsui, EN Kaneshiro, BK Oyama, D Sawdai, AK Oki, ... IEEE Journal of Solid-State Circuits 37 (9), 1115-1119, 2002 | 81 | 2002 |
| Ultra-low dc power GaAs HBT S-and C-band low noise amplifiers for portable wireless applications KW Kobayashi, AK Oki, LT Tran, DC Streit IEEE Transactions on Microwave Theory and Techniques 43 (12), 3055-3061, 1995 | 77 | 1995 |
| Reliability analysis of GaAs/AlGaAs HBTs under forward current/temperature stress ME Hafizi, LM Pawlowicz, LT Tran, DK Umemoto, DC Streit, AK Oki, ... 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC), 329-332, 1990 | 76 | 1990 |
| A 1–25 GHz GaN HEMT MMIC low-noise amplifier M Chen, W Sutton, I Smorchkova, B Heying, WB Luo, V Gambin, F Oshita, ... IEEE Microwave and Wireless Components Letters 20 (10), 563-565, 2010 | 74 | 2010 |
| A 2 watt, sub-dB noise figure GaN MMIC LNA-PA amplifier with multi-octave bandwidth from 0.2-8 GHz KW Kobayashi, YC Chen, I Smorchkova, R Tsai, M Wojtowicz, A Oki 2007 IEEE/MTT-S International Microwave Symposium, 619-622, 2007 | 73 | 2007 |
| Low phase noise millimeter-wave frequency sources using InP-based HBT MMIC technology H Wang, KW Chang, LT Tran, JC Cowles, TR Block, EW Lin, GS Dow, ... IEEE Journal of Solid-State Circuits 31 (10), 1419-1425, 1996 | 70 | 1996 |
| 12-40 GHz low harmonic distortion and phase noise performance of GaAs heterojunction bipolar transistors ME Kim, AK Oki, JB Camou, PD Chow, BL Nelson, DM Smith, JC Canyon, ... 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit …, 1988 | 70 | 1988 |
| High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contacts DC Streit, AK Oki, DK Umemoto, JR Velebir, KS Stolt, FM Yamada, Y Saito, ... IEEE electron device letters 12 (9), 471-473, 1991 | 67 | 1991 |
| Multi-decade GaN HEMT cascode-distributed power amplifier with baseband performance KW Kobayashi, Y Chen, I Smorchkova, B Heying, WB Luo, W Sutton, ... 2009 IEEE Radio Frequency Integrated Circuits Symposium, 369-372, 2009 | 63 | 2009 |
| A 50 MHz-30 GHz broadband co-planar waveguide SPDT PIN diode switch with 45-dB isolation KW Kobayashi, L Tran, AK Oki, DC Streit IEEE Microwave and Guided Wave Letters 5 (2), 56-58, 1995 | 62 | 1995 |
| A 50-MHz-55-GHz multidecade InP-based HBT distributed amplifier KW Kobayashi, J Cowles, LT Tran, A Gutierrez-Aitken, TR Block, AK Oki, ... IEEE Microwave and Guided Wave Letters 7 (10), 353-355, 1997 | 61 | 1997 |
| GaAs HBT wideband matrix distributed and Darlington feedback amplifiers to 24 GHz KW Kobayashi, R Esfandiari, ME Hafizi, DC Streit, AK Oki, LT Tran, ... IEEE Transactions on Microwave Theory and Techniques 39 (12), 2001-2009, 1991 | 55 | 1991 |
| Monolithic HEMT-HBT integration by selective MBE DC Streit, DK Umemoto, KW Kobayashi, AK Oki IEEE transactions on electron devices 42 (4), 618-623, 1995 | 49 | 1995 |
| Monolithic GaAs HBT pin diode variable gain amplifiers, attenuators, and switches KW Kobayashi, AK Oki, DK Umemoto, SKZ Claxton, DC Streit IEEE transactions on microwave theory and techniques 41 (12), 2295-2302, 1993 | 49 | 1993 |
| 0.1/spl mu/m InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band R Grundbacher, R Lai, M Barsky, R Tsai, T Gaier, S Weinreb, D Dawson, ... Conference Proceedings. 14th Indium Phosphide and Related Materials …, 2002 | 47 | 2002 |
