Simone Bertolazzi
Simone Bertolazzi
Engineer Analyst at Yole Développement
Verified email at
Cited by
Cited by
Stretching and breaking of ultrathin MoS2
S Bertolazzi, J Brivio, A Kis
ACS nano 5 (12), 9703-9709, 2011
Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
S Bertolazzi, D Krasnozhon, A Kis
ACS nano 7 (4), 3246-3252, 2013
Large-Area Epitaxial Monolayer MoS2
D Dumcenco, D Ovchinnikov, K Marinov, P Lazic, M Gibertini, N Marzari, ...
ACS nano 9 (4), 4611-4620, 2015
Thermal conductivity of monolayer molybdenum disulfide obtained from temperature-dependent Raman spectroscopy
R Yan, JR Simpson, S Bertolazzi, J Brivio, M Watson, X Wu, A Kis, T Luo, ...
ACS nano 8 (1), 986-993, 2014
Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D Crystals
H Shi, R Yan, S Bertolazzi, J Brivio, B Gao, A Kis, D Jena, HG Xing, ...
ACS nano 7 (2), 1072-1080, 2013
Single-Layer MoS2 Electronics
D Lembke, S Bertolazzi, A Kis
Accounts of chemical research 48 (1), 100-110, 2015
Nonvolatile memories based on graphene and related 2D materials
S Bertolazzi, P Bondavalli, S Roche, T San, SY Choi, L Colombo, ...
Advanced materials 31 (10), 1806663, 2019
Molecular chemistry approaches for tuning the properties of two-dimensional transition metal dichalcogenides
S Bertolazzi, M Gobbi, Y Zhao, C Backes, P Samori
Chemical Society Reviews 47 (17), 6845-6888, 2018
Engineering Chemically Active Defects in Monolayer MoS2 Transistors via Ion‐Beam Irradiation and Their Healing via Vapor Deposition of Alkanethiols
S Bertolazzi, S Bonacchi, G Nan, A Pershin, D Beljonne, P Samorě
Advanced materials 29 (18), 1606760, 2017
Collective molecular switching in hybrid superlattices for light-modulated two-dimensional electronics
M Gobbi, S Bonacchi, JX Lian, A Vercouter, S Bertolazzi, B Zyska, ...
Nature Communications 9 (1), 2661, 2018
Doping of monolayer transition-metal dichalcogenides via physisorption of aromatic solvent molecules
Y Wang, A Slassi, MA Stoeckel, S Bertolazzi, J Cornil, D Beljonne, ...
The Journal of Physical Chemistry Letters 10 (3), 540-547, 2019
A universal approach toward light-responsive two-dimensional electronics: chemically tailored hybrid van der Waals heterostructures
Y Zhao, S Bertolazzi, P Samorě
ACS nano 13 (4), 4814-4825, 2019
Can 2D-nanocrystals extend the lifetime of floating-gate transistor based nonvolatile memory?
W Cao, J Kang, S Bertolazzi, A Kis, K Banerjee
IEEE Transactions on Electron Devices 61 (10), 3456-3464, 2014
MoS2 nanosheets via electrochemical lithium-ion intercalation under ambient conditions
M El Garah, S Bertolazzi, S Ippolito, M Eredia, I Janica, G Melinte, O Ersen, ...
FlatChem, 2018
Molecular Approach to Electrochemically Switchable Monolayer MoS2 Transistors
Y Zhao, S Bertolazzi, MS Maglione, C Rovira, M Mas‐Torrent, P Samorě
Advanced Materials 32 (19), 2000740, 2020
Morphology and electronic properties of electrochemically exfoliated graphene
M Eredia, S Bertolazzi, T Leydecker, M El Garah, I Janica, G Melinte, ...
The journal of physical chemistry letters 8 (14), 3347-3355, 2017
The correlation between gate dielectric, film growth, and charge transport in organic thin film transistors: the case of vacuum-sublimed tetracene thin films
J Wünsche, G Tarabella, S Bertolazzi, M Bocoum, N Coppede, L Barba, ...
Journal of Materials Chemistry C 1 (5), 967-976, 2013
Tetracene thin film transistors with polymer gate dielectrics
S Bertolazzi, J Wünsche, F Cicoira, C Santato
Applied Physics Letters 99, 013301, 2011
Influence of the oxidation level on the electronic, morphological and charge transport properties of novel dithienothiophene S-oxide and S, S-dioxide inner core oligomers
C Santato, L Favaretto, M Melucci, A Zanelli, M Gazzano, M Monari, D Isik, ...
Journal of Materials Chemistry 20 (4), 669-676, 2010
Exploring flatland: AFM of mechanical and electrical properties of graphene, MoS2 and other low-dimensional materials
S Bertolazzi, J Brivio, A Radenovic, A Kis, H Wilson, L Prisbrey, E Minot, ...
Microscopy and Analysis 27 (3), 2013
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