Ji-Hyun Hur
Ji-Hyun Hur
Research Prof. @ Sejong Univ., CEO @ Hur Advanced Research (, https
Verified email at
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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
MJ Lee, CB Lee, D Lee, SR Lee, M Chang, JH Hur, YB Kim, CJ Kim, ...
Nature materials 10 (8), 625-630, 2011
High performance amorphous oxide thin film transistors with self-aligned top-gate structure
JC Park, SW Kim, SI Kim, H Yin, JH Hur, SH Jeon, SH Park, IH Song, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
Modeling for bipolar resistive memory switching in transition-metal oxides
JH Hur, MJ Lee, CB Lee, YB Kim, CJ Kim
Physical Review B 82 (15), 155321, 2010
Bi-layered RRAM with unlimited endurance and extremely uniform switching
YB Kim, SR Lee, D Lee, CB Lee, M Chang, JH Hur, MJ Lee, GS Park, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 52-53, 2011
Write current reduction in transition metal oxide based resistance-change memory
SE Ahn, MJ Lee, Y Park, BS Kang, CB Lee, KH Kim, S Seo, DS Suh, ...
Advanced materials 20 (5), 924-928, 2008
Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory
SR Lee, YB Kim, M Chang, KM Kim, CB Lee, JH Hur, GS Park, D Lee, ...
2012 Symposium on VLSI Technology (VLSIT), 71-72, 2012
A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory
MJ Lee, D Lee, SH Cho, JH Hur, SM Lee, DH Seo, DS Kim, MS Yang, ...
Nature communications 4 (1), 2629, 2013
180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications
S Jeon, S Park, I Song, JH Hur, J Park, S Kim, S Kim, H Yin, E Lee, S Ahn, ...
2010 International Electron Devices Meeting, 21.3. 1-21.3. 4, 2010
Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films
CB Lee, BS Kang, MJ Lee, SE Ahn, G Stefanovich, WX Xianyu, KH Kim, ...
Applied Physics Letters 91 (8), 2007
Highly uniform switching of tantalum embedded amorphous oxide using self-compliance bipolar resistive switching
CB Lee, DS Lee, A Benayad, SR Lee, M Chang, MJ Lee, J Hur, YB Kim, ...
IEEE Electron Device Letters 32 (3), 399-401, 2011
Nanometer-scale oxide thin film transistor with potential for high-density image sensor applications
S Jeon, S Park, I Song, JH Hur, J Park, H Kim, S Kim, S Kim, H Yin, ...
ACS Applied Materials & Interfaces 3 (1), 1-6, 2011
Modeling for multilevel switching in oxide-based bipolar resistive memory
JH Hur, KM Kim, M Chang, SR Lee, D Lee, CB Lee, MJ Lee, YB Kim, ...
Nanotechnology 23 (22), 225702, 2012
Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress
S Lee, K Jeon, JH Park, S Kim, D Kong, DM Kim, DH Kim, S Kim, S Kim, ...
Applied Physics Letters 95 (13), 2009
First principles study of oxygen vacancy states in monoclinic ZrO2: Interpretation of conduction characteristics
JH Hur, S Park, UI Chung
Journal of Applied Physics 112 (11), 113719, 2012
Resistive Switching in Solution-Processed Copper Oxide (CuxO) by Stoichiometry Tuning
S Rehman, JH Hur, D Kim
The Journal of Physical Chemistry C 122 (20), 11076-11085, 2018
Tunable resistive switching of vertical ReSe2/graphene hetero-structure enabled by Schottky barrier height and DUV light
S Rehmana, H Kim, M Farooq, Khana, JH Hur, J Eom, Deok-keeKim
Journal of Alloys and Compounds 855, 157310, 2021
Tuning of ionic mobility to improve the resistive switching behavior of Zn-doped CeO2
S Rehman, H Kim, M Farooq Khan, JH Hur, AD Lee, D Kim
Scientific Reports 9 (1), 19387, 2019
The Influence of Hydrogen on Defects of In–Ga–Zn–O Semiconductor Thin-Film Transistors With Atomic-Layer Deposition of Al2O3
T Kim, Y Nam, JH Hur, SHK Park, S Jeon
IEEE Electron Deive Letters 37 (9), 1131, 2016
High mobility and high stability glassy metal-oxynitride materials and devices
E Lee, T Kim, A Benayad, JH Hur, GS Park, S Jeon
Scientific Report 6, 23940, 2016
Fast transient charging behavior of HfInZnO thin-film transistor
T Kim, JH Hur, S Jeon
Applied Physics Letters 107 (9), 2015
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