| High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices AM Hoang, A Dehzangi, S Adhikary, M Razeghi Scientific Reports 6, 24144, 2016 | 142 | 2016 |
| InAs/InAs1− xSbx type-II superlattices for high performance long wavelength infrared detection A Haddadi, G Chen, R Chevallier, AM Hoang, M Razeghi Applied Physics Letters 105 (12), 2014 | 130 | 2014 |
| Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices AM Hoang, G Chen, A Haddadi, S Abdollahi Pour, M Razeghi Applied Physics Letters 100 (21), 2012 | 128 | 2012 |
| Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1− xSbx type-II superlattices A Haddadi, R Chevallier, G Chen, AM Hoang, M Razeghi Applied Physics Letters 106 (1), 2015 | 105 | 2015 |
| High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection AM Hoang, G Chen, R Chevallier, A Haddadi, M Razeghi Applied Physics Letters 104 (25), 2014 | 92 | 2014 |
| Growth and characterization of long-wavelength infrared type-II superlattice photodiodes on a 3-in GaSb wafer BM Nguyen, G Chen, MA Hoang, M Razeghi IEEE Journal of Quantum Electronics 47 (5), 686-690, 2011 | 92 | 2011 |
| Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices M Razeghi, A Haddadi, AM Hoang, EK Huang, G Chen, S Bogdanov, ... Infrared Physics & Technology 59, 41-52, 2013 | 87 | 2013 |
| Demonstration of high performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices AM Hoang, G Chen, A Haddadi, M Razeghi Applied Physics Letters 102 (1), 2013 | 73 | 2013 |
| Elimination of surface leakage in gate controlled type-II InAs/GaSb mid-infrared photodetectors G Chen, BM Nguyen, AM Hoang, EK Huang, SR Darvish, M Razeghi Applied Physics Letters 99 (18), 2011 | 65 | 2011 |
| Type-II superlattice dual-band LWIR imager with M-barrier and Fabry–Perot resonance EK Huang, A Haddadi, G Chen, BM Nguyen, MA Hoang, R McClintock, ... Optics letters 36 (13), 2560-2562, 2011 | 61 | 2011 |
| Highly selective two-color mid-wave and long-wave infrared detector hybrid based on Type-II superlattices EK Huang, MA Hoang, G Chen, S Ramezani-Darvish, A Haddadi, ... Optics letters 37 (22), 4744-4746, 2012 | 57 | 2012 |
| High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1− xSbx superlattices A Haddadi, XV Suo, S Adhikary, P Dianat, R Chevallier, AM Hoang, ... Applied Physics Letters 107 (14), 2015 | 56 | 2015 |
| Effect of contact doping in superlattice-based minority carrier unipolar detectors BM Nguyen, G Chen, AM Hoang, S Abdollahi Pour, S Bogdanov, ... Applied Physics Letters 99 (3), 2011 | 50 | 2011 |
| Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application G Chen, A Haddadi, AM Hoang, R Chevallier, M Razeghi Optics letters 40 (1), 45-47, 2014 | 47 | 2014 |
| High Operability 10241024 Long Wavelength Type-II Superlattice Focal Plane Array A Haddadi, S Ramezani-Darvish, G Chen, AM Hoang, BM Nguyen, ... IEEE Journal of Quantum Electronics 48 (2), 221-228, 2011 | 46 | 2011 |
| Antimonide-based type II superlattices: A superior candidate for the third generation of infrared imaging systems M Razeghi, A Haddadi, AM Hoang, G Chen, S Bogdanov, SR Darvish, ... Journal of electronic materials 43, 2802-2807, 2014 | 43 | 2014 |
| Generation-recombination and trap-assisted tunneling in long wavelength infrared minority electron unipolar photodetectors based on InAs/GaSb superlattice F Callewaert, AM Hoang, M Razeghi Applied Physics Letters 104 (5), 2014 | 35 | 2014 |
| Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes S Bogdanov, BM Nguyen, AM Hoang, M Razeghi Applied Physics Letters 98 (18), 183501-183501-3, 2011 | 35 | 2011 |
| Active and passive infrared imager based on short-wave and mid-wave type-II superlattice dual-band detectors E Kwei-wei Huang, A Haddadi, G Chen, AM Hoang, M Razeghi Optics Letters 38 (1), 22-24, 2012 | 34 | 2012 |
| Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors G Chen, EK Huang, AM Hoang, S Bogdanov, SR Darvish, M Razeghi Applied Physics Letters 101 (21), 2012 | 31 | 2012 |
