| NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning S Kim, M Ishii, S Lewis, T Perri, M BrightSky, W Kim, R Jordan, GW Burr, ... 2015 IEEE international electron devices meeting (IEDM), 17.1. 1-17.1. 4, 2015 | 208 | 2015 |
| Nonvolatile 3D-FPGA with monolithically stacked RRAM-based configuration memory YY Liauw, Z Zhang, W Kim, A El Gamal, SS Wong 2012 IEEE International Solid-State Circuits Conference, 406-408, 2012 | 175 | 2012 |
| IEEE International Electron Devices Meeting (IEDM) W Kim, T Todorov, M Onen, T Gokmen, D Bishop, P Solomon, KT Lee, ... San Francisco, CA, USA, 38.3, 2019 | 142 | 2019 |
| Self‐healing of a confined phase change memory device with a metallic surfactant layer Y Xie, W Kim, Y Kim, S Kim, J Gonsalves, M BrightSky, C Lam, Y Zhu, ... Advanced Materials 30 (9), 1705587, 2018 | 100 | 2018 |
| Forming-free nitrogen-doped AlOX RRAM with sub-μA programming current W Kim, SI Park, Z Zhang, Y Yang-Liauw, D Sekar, HSP Wong, SS Wong 2011 Symposium on VLSI Technology-Digest of Technical Papers, 2011 | 100 | 2011 |
| ALD-based confined PCM with a metallic liner toward unlimited endurance W Kim, M BrightSky, T Masuda, N Sosa, S Kim, R Bruce, F Carta, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.2. 1-4.2. 4, 2016 | 87 | 2016 |
| Current Conduction Mechanism of Nitrogen-Doped RRAM W Kim, SI Park, Z Zhang, S Wong IEEE Transactions on Electron Devices 61 (6), 2158-2163, 2014 | 66 | 2014 |
| Confined PCM-based analog synaptic devices offering low resistance-drift and 1000 programmable states for deep learning W Kim, RL Bruce, T Masuda, GW Fraczak, N Gong, P Adusumilli, ... 2019 Symposium on VLSI Technology, T66-T67, 2019 | 65 | 2019 |
| A phase change memory cell with metallic surfactant layer as a resistance drift stabilizer S Kim, N Sosa, M BrightSky, D Mori, W Kim, Y Zhu, K Suu, C Lam Electron Devices Meeting (IEDM), 2013 IEEE International, 30.7. 1-30.7. 4, 2013 | 64 | 2013 |
| Phase-change memory cycling endurance SB Kim, GW Burr, W Kim, SW Nam MRS Bulletin 44 (9), 710-714, 2019 | 59 | 2019 |
| An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM HY Cheng, WC Chien, IT Kuo, EK Lai, Y Zhu, JL Jordan-Sweet, A Ray, ... 2017 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2017 | 59 | 2017 |
| Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory HY Cheng, WC Chien, IT Kuo, CW Yeh, L Gignac, W Kim, EK Lai, YF Lin, ... 2018 IEEE International Electron Devices Meeting (IEDM), 37.3. 1-37.3. 4, 2018 | 53 | 2018 |
| Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material HY Cheng, WC Chien, M BrightSky, YH Ho, Y Zhu, A Ray, R Bruce, W Kim, ... 2015 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2015 | 53 | 2015 |
| A study on OTS-PCM pillar cell for 3-D stackable memory WC Chien, CW Yeh, RL Bruce, HY Cheng, IT Kuo, CH Yang, A Ray, ... IEEE Transactions on Electron Devices 65 (11), 5172-5179, 2018 | 43 | 2018 |
| On-chip trainable 1.4 M 6T2R PCM synaptic array with 1.6 K stochastic LIF neurons for spiking RBM M Ishii, S Kim, S Lewis, A Okazaki, J Okazawa, M Ito, M Rasch, W Kim, ... 2019 IEEE International Electron Devices Meeting (IEDM), 14.2. 1-14.2. 4, 2019 | 41 | 2019 |
| High-performance Si 1− x Ge x channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions P Hashemi, M Kobayashi, A Majumdar, L Yang, A Baraskar, ... VLSI Circuits (VLSIC), 2013 Symposium on, T18-T19, 2013 | 34 | 2013 |
| Crystalline-as-deposited ALD phase change material confined PCM cell for high density storage class memory M BrightSky, N Sosa, T Masuda, W Kim, S Kim, A Ray, R Bruce, ... 2015 IEEE International Electron Devices Meeting (IEDM), 3.6. 1-3.6. 4, 2015 | 32 | 2015 |
| Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for … P Hashemi, K Balakrishnan, A Majumdar, A Khakifirooz, W Kim, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 28 | 2014 |
| Experimental demonstration and modeling of a ferroelectric gate stack with a tunnel dielectric insert for NAND applications D Das, H Park, Z Wang, C Zhang, PV Ravindran, C Park, N Afroze, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 27 | 2023 |
| Comprehensive scaling study on 3D cross-point PCM toward 1Znm node for SCM applications WC Chien, HY Ho, CW Yeh, CH Yang, HY Cheng, W Kim, IT Kuo, ... 2019 Symposium on VLSI Technology, T60-T61, 2019 | 25 | 2019 |
Robert L BruceResearch Staff Member, IBM ResearchVerified email at us.ibm.com
