Wanki Kim
Wanki Kim
IBM Research, Stanford University
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NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning
S Kim, M Ishii, S Lewis, T Perri, M BrightSky, W Kim, R Jordan, GW Burr, ...
2015 IEEE international electron devices meeting (IEDM), 17.1. 1-17.1. 4, 2015
Nonvolatile 3D-FPGA with monolithically stacked RRAM-based configuration memory
YY Liauw, Z Zhang, W Kim, A El Gamal, SS Wong
2012 IEEE International Solid-State Circuits Conference, 406-408, 2012
Forming-free nitrogen-doped AlOX RRAM with sub-μA programming current
W Kim, SI Park, Z Zhang, Y Yang-Liauw, D Sekar, HSP Wong, SS Wong
2011 Symposium on VLSI Technology-Digest of Technical Papers, 2011
Self‐healing of a confined phase change memory device with a metallic surfactant layer
Y Xie, W Kim, Y Kim, S Kim, J Gonsalves, M BrightSky, C Lam, Y Zhu, ...
Advanced Materials 30 (9), 1705587, 2018
ALD-based confined PCM with a metallic liner toward unlimited endurance
W Kim, M BrightSky, T Masuda, N Sosa, S Kim, R Bruce, F Carta, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.2. 1-4.2. 4, 2016
A phase change memory cell with metallic surfactant layer as a resistance drift stabilizer
S Kim, N Sosa, M BrightSky, D Mori, W Kim, Y Zhu, K Suu, C Lam
Electron Devices Meeting (IEDM), 2013 IEEE International, 30.7. 1-30.7. 4, 2013
Current Conduction Mechanism of Nitrogen-Doped RRAM
W Kim, SI Park, Z Zhang, S Wong
IEEE Transactions on Electron Devices 61 (6), 2158-2163, 2014
Confined PCM-based analog synaptic devices offering low resistance-drift and 1000 programmable states for deep learning
W Kim, RL Bruce, T Masuda, GW Fraczak, N Gong, P Adusumilli, ...
2019 Symposium on VLSI Technology, T66-T67, 2019
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM
HY Cheng, WC Chien, IT Kuo, EK Lai, Y Zhu, JL Jordan-Sweet, A Ray, ...
2017 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2017
Phase-change memory cycling endurance
SB Kim, GW Burr, W Kim, SW Nam
MRS Bulletin 44 (9), 710-714, 2019
Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory
HY Cheng, WC Chien, IT Kuo, CW Yeh, L Gignac, W Kim, EK Lai, YF Lin, ...
2018 IEEE International Electron Devices Meeting (IEDM), 37.3. 1-37.3. 4, 2018
Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material
HY Cheng, WC Chien, M BrightSky, YH Ho, Y Zhu, A Ray, R Bruce, W Kim, ...
2015 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2015
A study on OTS-PCM pillar cell for 3-D stackable memory
WC Chien, CW Yeh, RL Bruce, HY Cheng, IT Kuo, CH Yang, A Ray, ...
IEEE Transactions on Electron Devices 65 (11), 5172-5179, 2018
High-performance Si 1− x Ge x channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
P Hashemi, M Kobayashi, A Majumdar, L Yang, A Baraskar, ...
VLSI Circuits (VLSIC), 2013 Symposium on, T18-T19, 2013
On-chip trainable 1.4 M 6T2R PCM synaptic array with 1.6 K stochastic LIF neurons for spiking RBM
M Ishii, S Kim, S Lewis, A Okazaki, J Okazawa, M Ito, M Rasch, W Kim, ...
2019 IEEE International Electron Devices Meeting (IEDM), 14.2. 1-14.2. 4, 2019
Crystalline-as-deposited ALD phase change material confined PCM cell for high density storage class memory
M BrightSky, N Sosa, T Masuda, W Kim, S Kim, A Ray, R Bruce, ...
2015 IEEE International Electron Devices Meeting (IEDM), 3.6. 1-3.6. 4, 2015
Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for …
P Hashemi, K Balakrishnan, A Majumdar, A Khakifirooz, W Kim, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
Comprehensive scaling study on 3D cross-point PCM toward 1Znm node for SCM applications
WC Chien, HY Ho, CW Yeh, CH Yang, HY Cheng, W Kim, IT Kuo, ...
2019 Symposium on VLSI Technology, T60-T61, 2019
Reliability challenges with materials for analog computing
EA Cartier, W Kim, N Gong, T Gokmen, MM Frank, DM Bishop, Y Kim, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-10, 2019
Reliability study of a 128Mb phase change memory chip implemented with doped Ga-Sb-Ge with extraordinary thermal stability
WC Chien, HY Cheng, M BrightSky, A Ray, CW Yeh, W Kim, R Bruce, ...
2016 IEEE International Electron Devices Meeting (IEDM), 21.1. 1-21.1. 4, 2016
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