David Scanlon
David Scanlon
Professor of Computational Materials Design at University College London
Verified email at ucl.ac.uk - Homepage
Cited by
Cited by
Band alignment of rutile and anatase TiO2
DO Scanlon, CW Dunnill, J Buckeridge, SA Shevlin, AJ Logsdail, ...
Nature materials 12 (9), 798, 2013
Theoretical and Experimental Study of the Electronic Structures of MoO3 and MoO2
DO Scanlon, GW Watson, DJ Payne, GR Atkinson, RG Egdell, DSL Law
The Journal of Physical Chemistry C 114 (10), 4636-4645, 2010
Self‐regulation mechanism for charged point defects in hybrid halide perovskites
A Walsh, DO Scanlon, S Chen, XG Gong, SH Wei
Angewandte Chemie 127 (6), 1811-1814, 2015
On the application of the tolerance factor to inorganic and hybrid halide perovskites: a revised system
W Travis, ENK Glover, H Bronstein, DO Scanlon, RG Palgrave
Chemical Science 7 (7), 4548-4556, 2016
Acceptor levels in p-type Cu 2 O: rationalizing theory and experiment
DO Scanlon, BJ Morgan, GW Watson, A Walsh
Physical Review Letters 103 (9), 096405, 2009
Beyond methylammonium lead iodide: prospects for the emergent field of ns 2 containing solar absorbers
AM Ganose, CN Savory, DO Scanlon
Chemical Communications 53 (1), 20-44, 2017
Can Pb-free halide double perovskites support high-efficiency solar cells?
CN Savory, A Walsh, DO Scanlon
ACS energy letters 1 (5), 949-955, 2016
Controlling Bulk Conductivity in Topological Insulators: Key Role of Anti‐Site Defects
DO Scanlon, PDC King, RP Singh, A De La Torre, SMK Walker, ...
Advanced Materials 24 (16), 2154-2158, 2012
An ab initio Study of Reduction of V2O5 through the Formation of Oxygen Vacancies and Li Intercalation
DO Scanlon, A Walsh, BJ Morgan, GW Watson
The Journal of Physical Chemistry C 112 (26), 9903-9911, 2008
Defect Tolerance to Intolerance in the Vacancy-Ordered Double Perovskite Semiconductors Cs2SnI6 and Cs2TeI6
AE Maughan, AM Ganose, MM Bordelon, EM Miller, DO Scanlon, ...
Journal of the American Chemical Society 138 (27), 8453-8464, 2016
Understanding the p-type defect chemistry of CuCrO 2
DO Scanlon, GW Watson
Journal of Materials Chemistry 21 (11), 3655-3663, 2011
n-Type doped transparent conducting binary oxides: an overview
SC Dixon, DO Scanlon, CJ Carmalt, IP Parkin
Journal of Materials Chemistry C 4 (29), 6946-6961, 2016
Role of Lattice Distortions in the Oxygen Storage Capacity of Divalently Doped CeO2
AB Kehoe, DO Scanlon, GW Watson
Chemistry of materials 23 (20), 4464-4468, 2011
Sources of conductivity and doping limits in CdO from hybrid density functional theory
M Burbano, DO Scanlon, GW Watson
Journal of the American Chemical Society 133 (38), 15065-15072, 2011
Defect engineering of BaSnO 3 for high-performance transparent conducting oxide applications
DO Scanlon
Physical Review B 87 (16), 161201, 2013
Small polarons in Nb-and Ta-doped rutile and anatase TiO 2
BJ Morgan, DO Scanlon, GW Watson
Journal of Materials Chemistry 19 (29), 5175-5178, 2009
Bismuth oxyhalides: synthesis, structure and photoelectrochemical activity
DS Bhachu, SJA Moniz, S Sathasivam, DO Scanlon, A Walsh, ...
Chemical science 7 (8), 4832-4841, 2016
Interplay of orbital and relativistic effects in bismuth oxyhalides: BiOF, BiOCl, BiOBr, and BiOI
AM Ganose, M Cuff, KT Butler, A Walsh, DO Scanlon
Chemistry of Materials 28 (7), 1980-1984, 2016
On the possibility of p-type SnO 2
DO Scanlon, GW Watson
Journal of Materials Chemistry 22 (48), 25236-25245, 2012
Analysis of Intrinsic Defects in CeO2 Using a Koopmans-Like GGA+U Approach
PRL Keating, DO Scanlon, BJ Morgan, NM Galea, GW Watson
The Journal of Physical Chemistry C 116 (3), 2443-2452, 2012
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