Žydrūnas Podlipskas
Žydrūnas Podlipskas
PhD student, Vilnius University
Verified email at tmi.vu.lt
Title
Cited by
Cited by
Year
Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers
Ž Podlipskas, R Aleksiejūnas, A Kadys, J Mickevičius, J Jurkevičius, ...
Journal of Physics D: Applied Physics 49 (14), 145110, 2016
132016
Dynamics of nonequilibrium carrier decay in AlGaN epitaxial layers with high aluminum content
T Saxena, M Shur, S Nargelas, Ž Podlipskas, R Aleksiejūnas, ...
Optics express 23 (15), 19646-19655, 2015
72015
Direct Auger recombination and density-dependent hole diffusion in InN
R Aleksiejūnas, Ž Podlipskas, S Nargelas, A Kadys, M Kolenda, ...
Scientific reports 8 (1), 4621, 2018
62018
Nonradiative Recombination, Carrier Localization, and Emission Efficiency of AlGaN Epilayers with Different Al Content
J Mickevičius, Ž Podlipskas, R Aleksiejūnas, A Kadys, J Jurkevičius, ...
Journal of Electronic Materials 44 (12), 4706-4709, 2015
52015
The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface
Ž Podlipskas, J Jurkevičius, A Kadys, S Miasojedovas, T Malinauskas, ...
Scientific Reports 9 (1), 1-8, 2019
42019
Extreme radiation resistance in InN
Ž Podlipskas, J Jurkevičius, A Kadys, M Kolenda, V Kovalevskij, ...
Journal of Alloys and Compounds 789, 48-55, 2019
32019
Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers
Ž Podlipskas, R Aleksiejūnas, S Nargelas, J Jurkevičius, J Mickevičius, ...
Current Applied Physics 16 (6), 633-637, 2016
32016
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