Žydrūnas Podlipskas
Žydrūnas Podlipskas
PhD student, Vilnius University
Verified email at tmi.vu.lt
Cited by
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Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers
Ž Podlipskas, R Aleksiejūnas, A Kadys, J Mickevičius, J Jurkevičius, ...
Journal of Physics D: Applied Physics 49 (14), 145110, 2016
Dynamics of nonequilibrium carrier decay in AlGaN epitaxial layers with high aluminum content
T Saxena, M Shur, S Nargelas, Ž Podlipskas, R Aleksiejūnas, ...
Optics express 23 (15), 19646-19655, 2015
Direct Auger recombination and density-dependent hole diffusion in InN
R Aleksiejūnas, Ž Podlipskas, S Nargelas, A Kadys, M Kolenda, ...
Scientific reports 8 (1), 4621, 2018
Nonradiative Recombination, Carrier Localization, and Emission Efficiency of AlGaN Epilayers with Different Al Content
J Mickevičius, Ž Podlipskas, R Aleksiejūnas, A Kadys, J Jurkevičius, ...
Journal of Electronic Materials 44 (12), 4706-4709, 2015
The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface
Ž Podlipskas, J Jurkevičius, A Kadys, S Miasojedovas, T Malinauskas, ...
Scientific Reports 9 (1), 1-8, 2019
Extreme radiation resistance in InN
Ž Podlipskas, J Jurkevičius, A Kadys, M Kolenda, V Kovalevskij, ...
Journal of Alloys and Compounds 789, 48-55, 2019
Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers
Ž Podlipskas, R Aleksiejūnas, S Nargelas, J Jurkevičius, J Mickevičius, ...
Current Applied Physics 16 (6), 633-637, 2016
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