Follow
xiuying zhang
xiuying zhang
NUS
Verified email at pku.edu.cn - Homepage
Title
Cited by
Cited by
Year
Simulations of quantum transport in sub-5-nm monolayer phosphorene transistors
R Quhe, Q Li, Q Zhang, Y Wang, H Zhang, J Li, X Zhang, D Chen, K Liu, ...
Physical Review Applied 10 (2), 024022, 2018
1562018
Many-body effect and device performance limit of monolayer InSe
Y Wang, R Fei, R Quhe, J Li, H Zhang, X Zhang, B Shi, L Xiao, Z Song, ...
ACS applied materials & interfaces 10 (27), 23344-23352, 2018
1052018
Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment
Y Wang, S Liu, Q Li, R Quhe, C Yang, Y Guo, X Zhang, Y Pan, J Li, ...
Reports on Progress in Physics 84 (5), 056501, 2021
1032021
Schottky barriers in bilayer phosphorene transistors
Y Pan, Y Dan, Y Wang, M Ye, H Zhang, R Quhe, X Zhang, J Li, W Guo, ...
ACS applied materials & interfaces 9 (14), 12694-12705, 2017
1012017
Monolayer tellurene–metal contacts
J Yan, X Zhang, Y Pan, J Li, B Shi, S Liu, J Yang, Z Song, H Zhang, M Ye, ...
Journal of Materials Chemistry C 6 (23), 6153-6163, 2018
912018
Sub 10 nm Bilayer Bi2O2Se Transistors
J Yang, R Quhe, Q Li, S Liu, L Xu, Y Pan, H Zhang, X Zhang, J Li, J Yan, ...
Advanced Electronic Materials 5 (3), 1800720, 2019
822019
Three-layer phosphorene-metal interfaces
X Zhang, Y Pan, M Ye, R Quhe, Y Wang, Y Guo, H Zhang, Y Dan, Z Song, ...
Nano Research 11, 707-721, 2018
782018
Crepe cake structured layered double hydroxide/sulfur/graphene as a positive electrode material for Li–S batteries
S Liu, X Zhang, S Wu, X Chen, X Yang, W Yue, J Lu, W Zhou
ACS nano 14 (7), 8220-8231, 2020
772020
Electrical contacts in monolayer arsenene devices
Y Wang, M Ye, M Weng, J Li, X Zhang, H Zhang, Y Guo, Y Pan, L Xiao, ...
ACS Applied Materials & Interfaces 9 (34), 29273-29284, 2017
752017
Monolayer bismuthene-metal contacts: a theoretical study
Y Guo, F Pan, M Ye, X Sun, Y Wang, J Li, X Zhang, H Zhang, Y Pan, ...
ACS applied materials & interfaces 9 (27), 23128-23140, 2017
752017
Excellent device performance of sub‐5‐nm monolayer tellurene transistors
J Yan, H Pang, L Xu, J Yang, R Quhe, X Zhang, Y Pan, B Shi, S Liu, L Xu, ...
Advanced Electronic Materials 5 (7), 1900226, 2019
702019
Electrical contacts in monolayer blue phosphorene devices
J Li, X Sun, C Xu, X Zhang, Y Pan, M Ye, Z Song, R Quhe, Y Wang, ...
Nano Research 11, 1834-1849, 2018
632018
Gate-tunable interfacial properties of in-plane ML MX 2 1T′–2H heterojunctions
S Liu, J Li, B Shi, X Zhang, Y Pan, M Ye, R Quhe, Y Wang, H Zhang, J Yan, ...
Journal of Materials Chemistry C 6 (21), 5651-5661, 2018
592018
High-performance sub-10-nm monolayer black phosphorene tunneling transistors
H Li, J Tie, J Li, M Ye, H Zhang, X Zhang, Y Pan, Y Wang, R Quhe, F Pan, ...
Nano Research 11, 2658-2668, 2018
562018
Holey graphite: A promising anode material with ultrahigh storage for lithium-ion battery
C Yang, X Zhang, J Li, J Ma, L Xu, J Yang, S Liu, S Fang, Y Li, X Sun, ...
Electrochimica Acta 346, 136244, 2020
512020
Schottky Contact in Monolayer WS2 Field‐Effect Transistors
H Tang, B Shi, Y Pan, J Li, X Zhang, J Yan, S Liu, J Yang, L Xu, J Yang, ...
Advanced Theory and Simulations 2 (5), 1900001, 2019
512019
n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors
B Shi, Y Wang, J Li, X Zhang, J Yan, S Liu, J Yang, Y Pan, H Zhang, ...
Physical Chemistry Chemical Physics 20 (38), 24641-24651, 2018
342018
Reexamination of the Schottky Barrier Heights in Monolayer MoS2 Field-Effect Transistors
Y Pan, J Gu, H Tang, X Zhang, J Li, B Shi, J Yang, H Zhang, J Yan, S Liu, ...
ACS Applied Nano Materials 2 (8), 4717-4726, 2019
332019
Monolayer GaS with high ion mobility and capacity as a promising anode battery material
Z Xiuying, Y Chen, P Yuanyuan, W Mouyi, X Linqiang, L Shiqi, Y Jie, ...
Journal of Materials Chemistry A, 2019
332019
Interfacial properties of stanene–metal contacts
Y Guo, F Pan, M Ye, Y Wang, Y Pan, X Zhang, J Li, H Zhang, J Lu
2D Materials 3 (3), 035020, 2016
312016
The system can't perform the operation now. Try again later.
Articles 1–20