Muhammad Farooq Khan
Muhammad Farooq Khan
Assistant Professor Sejong University, Yonsei University (PostDoc), South Korea
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High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films
MW Iqbal, MZ Iqbal, MF Khan, MA Shehzad, Y Seo, JH Park, C Hwang, ...
Scientific reports 5 (1), 10699, 2015
Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance
HMW Khalil, MF Khan, J Eom, H Noh
ACS applied materials & interfaces 7 (42), 23589-23596, 2015
Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method
S Hussain, J Singh, D Vikraman, AK Singh, MZ Iqbal, MF Khan, P Kumar, ...
Scientific reports 6 (1), 30791, 2016
Synthesis and characterization of large-area and continuous MoS 2 atomic layers by RF magnetron sputtering
S Hussain, MA Shehzad, D Vikraman, MF Khan, J Singh, DC Choi, Y Seo, ...
Nanoscale 8 (7), 4340-4347, 2016
n-MoS2/p-Si Solar Cells with Al2O3 Passivation for Enhanced Photogeneration
A Rehman, MF Khan, MA Shehzad, S Hussain, MF Bhopal, SH Lee, ...
ACS applied materials & interfaces 8 (43), 29383-29390, 2016
Room temperature spin valve effect in NiFe/WS2/Co junctions
MZ Iqbal, MW Iqbal, S Siddique, MF Khan, SM Ramay
Scientific reports 6 (1), 21038, 2016
Deep-ultraviolet-light-driven reversible doping of WS 2 field-effect transistors
MW Iqbal, MZ Iqbal, MF Khan, MA Shehzad, Y Seo, J Eom
Nanoscale 7 (2), 747-757, 2015
Synthesis, properties and novel electrocatalytic applications of the 2D-borophene Xenes
K Khan, AK Tareen, M Aslam, MF Khan, Z Shi, C Ma, SS Shams, ...
Progress in Solid State Chemistry 59, 100283, 2020
Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS2 van der Waals Heterojunction Diode
G Dastgeer, MF Khan, G Nazir, AM Afzal, S Aftab, BA Naqvi, J Cha, ...
ACS applied materials & interfaces 10 (15), 13150-13157, 2018
Ultimate limit in size and performance of WSe2 vertical diodes
G Nazir, H Kim, J Kim, KS Kim, DH Shin, MF Khan, DS Lee, JY Hwang, ...
Nature communications 9 (1), 5371, 2018
Improving the electrical properties of graphene layers by chemical doping
MWIJE Muhammad Farooq Khan, Muhammad Zahir Iqbal
Science and Technology of Advanced Materials 15, 2014
Enhanced photoresponse of ZnO quantum dot-decorated MoS 2 thin films
G Nazir, MF Khan, I Akhtar, K Akbar, P Gautam, H Noh, Y Seo, SH Chun, ...
RSC advances 7 (27), 16890-16900, 2017
Thickness-dependent resistive switching in black phosphorus CBRAM
S Rehman, MF Khan, S Aftab, H Kim, J Eom, D Kim
Journal of Materials Chemistry C 7 (3), 725-732, 2019
Thickness-dependent efficiency of directly grown graphene based solar cells
MA Rehman, SB Roy, I Akhtar, MF Bhopal, W Choi, G Nazir, MF Khan, ...
Carbon 148, 187-195, 2019
MoTe 2 van der Waals homojunction p–n diode with low resistance metal contacts
S Aftab, MF Khan, P Gautam, H Noh, J Eom
Nanoscale 11 (19), 9518-9525, 2019
Photocurrent Response of MoS2 Field-Effect Transistor by Deep Ultraviolet Light in Atmospheric and N2 Gas Environments
MF Khan, MW Iqbal, MZ Iqbal, MA Shehzad, Y Seo, J Eom
ACS Applied Materials & Interfaces 6 (23), 21645-21651, 2014
Comparison of Electrical and Photoelectrical Properties of ReS2 Field-Effect Transistors on Different Dielectric Substrates
G Nazir, MA Rehman, MF Khan, G Dastgeer, S Aftab, AM Afzal, Y Seo, ...
ACS applied materials & interfaces 10 (38), 32501-32509, 2018
Tailoring the electrical and photo-electrical properties of a WS 2 field effect transistor by selective n-type chemical doping
MW Iqbal, MZ Iqbal, MF Khan, MA Kamran, A Majid, T Alharbi, J Eom
RSC advances 6 (29), 24675-24682, 2016
Electrical and photo-electrical properties of MoS2 nanosheets with and without an Al2O3 capping layer under various environmental conditions
MF Khan
Science andTechnology of Advanced Materials, 2016
Ultraviolet-light-driven doping modulation in chemical vapor deposition grown graphene
MZ Iqbal, MW Iqbal, MF Khan, J Eom
Physical Chemistry Chemical Physics 17 (32), 20551-20556, 2015
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