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Katsushi Fujii
Katsushi Fujii
RIKEN, RAP
Verified email at rcast.u-tokyo.ac.jp
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Cited by
Year
Pathways to electrochemical solar-hydrogen technologies
S Ardo, DF Rivas, MA Modestino, VS Greiving, FF Abdi, EA Llado, ...
Energy & environmental science 11 (10), 2768-2783, 2018
3012018
Hydrogen gas generation by splitting aqueous water using n-type GaN photoelectrode with anodic oxidation
K Fujii, T Karasawa, K Ohkawa
Japanese journal of applied physics 44 (4L), L543, 2005
1902005
A 24.4% solar to hydrogen energy conversion efficiency by combining concentrator photovoltaic modules and electrochemical cells
A Nakamura, Y Ota, K Koike, Y Hidaka, K Nishioka, M Sugiyama, K Fujii
Applied Physics Express 8 (10), 107101, 2015
1832015
Effect of CO2 Bubbling into Aqueous Solutions Used for Electrochemical Reduction of CO2 for Energy Conversion and Storage
H Zhong, K Fujii, Y Nakano, F Jin
The Journal of Physical Chemistry C 119 (1), 55-61, 2015
1632015
The fabrication of vertical light-emitting diodes using chemical lift-off process
JS Ha, SW Lee, HJ Lee, HJ Lee, SH Lee, H Goto, T Kato, K Fujii, MW Cho, ...
IEEE Photonics Technology Letters 20 (3), 175-177, 2008
1392008
Photoelectrochemical properties of p-type GaN in comparison with n-type GaN
K Fujii, K Ohkawa
Japanese journal of applied physics 44 (7L), L909, 2005
1072005
Characteristics of hydrogen generation from water splitting by polymer electrolyte electrochemical cell directly connected with concentrated photovoltaic cell
K Fujii, S Nakamura, M Sugiyama, K Watanabe, B Bagheri, Y Nakano
International journal of hydrogen energy 38 (34), 14424-14432, 2013
1052013
Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n-type GaN
M Ono, K Fujii, T Ito, Y Iwaki, A Hirako, T Yao, K Ohkawa
The Journal of chemical physics 126 (5), 2007
992007
Photoelectrochemical properties of InGaN for H2 generation from aqueous water
K Fujii, K Kusakabe, K Ohkawa
Japanese journal of applied physics 44 (10R), 7433, 2005
912005
Bias-assisted H2 gas generation in HCl and KOH solutions using n-type GaN photoelectrode
K Fujii, K Ohkawa
Journal of The Electrochemical Society 153 (3), A468, 2006
572006
Lattice strain in bulk GaN epilayers grown on CrN/sapphire template
SW Lee, JS Ha, HJ Lee, HJ Lee, H Goto, T Hanada, T Goto, K Fujii, ...
Applied Physics Letters 94 (8), 2009
542009
Effect of KHCO3 concentration on electrochemical reduction of CO2 on copper electrode
H Zhong, K Fujii, Y Nakano
Journal of The Electrochemical Society 164 (9), F923, 2017
512017
Band-edge energies and photoelectrochemical properties of n-type Al x Ga1− x N and in y Ga1− y N alloys
K Fujii, M Ono, T Ito, Y Iwaki, A Hirako, K Ohkawa
Journal of The Electrochemical Society 154 (2), B175, 2006
502006
Hydrogen generation from aqueous water using n‐GaN by photoassisted electrolysis
K Fujii, K Ohkawa
physica status solidi c 3 (6), 2270-2273, 2006
472006
Optical properties of dislocations in wurtzite ZnO single crystals introduced at elevated temperatures
Y Ohno, H Koizumi, T Taishi, I Yonenaga, K Fujii, H Goto, T Yao
Journal of Applied Physics 104 (7), 2008
432008
Comprehensive review of integrating fuel cells to other energy systems for enhanced performance and enabling polygeneration
TH Kwan, F Katsushi, Y Shen, S Yin, Y Zhang, K Kase, Q Yao
Renewable and Sustainable Energy Reviews 128, 109897, 2020
412020
Solar to chemical energy conversion
M Sugiyama, K Fujii, S Nakamura
Lecture Notes Energy; Springer: Basel, Switzerland 32, 253, 2016
372016
Photoelectrochemical Properties of the p− n Junction in and near the Surface Depletion Region of n-Type GaN
K Fujii, M Ono, Y Iwaki, K Sato, K Ohkawa, T Yao
The Journal of Physical Chemistry C 114 (51), 22727-22735, 2010
352010
Distributed control of a user-on-demand renewable-energy power-source system using battery and hydrogen hybrid energy-storage devices
D Yamashita, K Tsuno, K Koike, K Fujii, S Wada, M Sugiyama
International Journal of Hydrogen Energy 44 (50), 27542-27552, 2019
332019
Semiconductor light-emitting devices
K Shimoyama, N Hosoi, K Fujii, A Yamauchi, H Gotoh, Y Sato
US Patent 6,278,137, 2001
332001
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Articles 1–20