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Jennifer Schuler
Jennifer Schuler
Verified email at uci.edu
Title
Cited by
Cited by
Year
Materials selection rules for amorphous complexion formation in binary metallic alloys
JD Schuler, TJ Rupert
Acta Materialia 140, 196-205, 2017
922017
Nanocrystalline Al-Mg with extreme strength due to grain boundary doping
SC Pun, W Wang, A Khalajhedayati, JD Schuler, JR Trelewicz, TJ Rupert
Materials Science and Engineering: A 696, 400-406, 2017
692017
Amorphous complexions enable a new region of high temperature stability in nanocrystalline Ni-W
JD Schuler, OK Donaldson, TJ Rupert
Scripta Materialia 154, 49-53, 2018
572018
Heavy ion irradiation effects on GaN/AlGaN high electron mobility transistor failure at off-state
Z Islam, AL Paoletta, AM Monterrosa, JD Schuler, TJ Rupert, K Hattar, ...
Microelectronics Reliability 102, 113493, 2019
362019
Effect of growth temperature on the synthesis of carbon nanotube arrays and amorphous carbon for thermal applications
QN Pham, LAS Larkin, CC Lisboa, CB Saltonstall, L Qiu, JD Schuler, ...
physica status solidi (a) 214 (7), 1600852, 2017
342017
Amorphous intergranular films mitigate radiation damage in nanocrystalline Cu-Zr
JD Schuler, CM Grigorian, CM Barr, BL Boyce, K Hattar, TJ Rupert
Acta Materialia, 2020
222020
Identifying interatomic potentials for the accurate modeling of interfacial segregation and structural transitions
Y Hu, JD Schuler, TJ Rupert
Computational Materials Science 148, 10-20, 2018
172018
In Situ High-Cycle Fatigue Reveals Importance of Grain Boundary Structure in Nanocrystalline Cu-Zr
JD Schuler, CM Barr, NM Heckman, G Copeland, BL Boyce, K Hattar, ...
JOM 71 (4), 1221-1232, 2019
152019
Method for forming small dimension openings in the organic masking layer of tri-layer lithography
JC Arnold, J Schuler, Y Yin
US Patent 8,735,283, 2014
122014
Solder volume compensation with C4 process
CL Arvin, ED Perfecto, W Sauter, JD Schuler
US Patent 8,742,578, 2014
102014
Solder volume compensation with C4 process
CL Arvin, ED Perfecto, W Sauter, JD Schuler
US Patent 8,742,578, 2014
102014
Substrate including selectively formed barrier layer
YM Brovman, BM Erwin, NA Polomoff, JD Schuler, ME Souter, CL Tessler
US Patent 9,754,823, 2017
62017
Substrate including selectively formed barrier layer
YM Brovman, BM Erwin, NA Polomoff, JD Schuler, ME Souter, CL Tessler
US Patent 9,754,823, 2017
52017
Substrate including selectively formed barrier layer
YM Brovman, BM Erwin, NA Polomoff, JD Schuler, ME Souter, CL Tessler
US Patent 9,754,823, 2017
52017
Solid-state dewetting instability in thermally-stable nanocrystalline binary alloys
JD Schuler, G Copeland, K Hattar, TJ Rupert, SA Briggs
Materialia, 100618, 2020
42020
Selective plating without photoresist
CL Arvin, HD Cox, BM Erwin, JJ Garant, E Misra, NA Polomoff, JD Schuler
US Patent App. 14/263,423, 2015
42015
Filtering lead from photoresist stripping solution
CL Arvin, HD Cox, AG Merryman, JD Schuler
US Patent 9,804,498, 2017
12017
Filtering lead from photoresist stripping solution
CL Arvin, HD Cox, AG Merryman, JD Schuler
US Patent 9,804,498, 2017
12017
Substrate including selectively formed barrier layer
YM Brovman, BM Erwin, NA Polomoff, JD Schuler, ME Souter, CL Tessler
US Patent 9,748,135, 2017
12017
Non-transparent microelectronic grade glass as a substrate, temporary carrier or wafer
CL Arvin, HD Cox, BM Erwin, JA Lubguban, ED Perfecto, JD Schuler
US Patent 9,728,440, 2017
12017
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Articles 1–20