| Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy P Wang, D Wang, NM Vu, T Chiang, JT Heron, Z Mi Applied Physics Letters 118 (22), 2021 | 90 | 2021 |
| An epitaxial ferroelectric ScAlN/GaN heterostructure memory D Wang, P Wang, S Mondal, S Mohanty, T Ma, E Ahmadi, Z Mi Advanced Electronic Materials 8 (9), 2200005, 2022 | 50 | 2022 |
| Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy D Wang, P Wang, B Wang, Z Mi Applied Physics Letters 119 (11), 2021 | 48 | 2021 |
| Repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown on sapphire D Wang, J Su, Z Chen, T Wang, L Yang, B Sheng, S Lin, X Rong, P Wang, ... Advanced Electronic Materials 5 (2), 1800651, 2019 | 43 | 2019 |
| Low dislocation density AlN on sapphire prepared by double sputtering and annealing D Wang, K Uesugi, S Xiao, K Norimatsu, H Miyake Applied Physics Express 13 (9), 095501, 2020 | 41 | 2020 |
| β-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy J Wei, K Kim, F Liu, P Wang, X Zheng, Z Chen, D Wang, A Imran, X Rong, ... Journal of Semiconductors 40 (1), 012802, 2019 | 40 | 2019 |
| N-polar ScAlN and HEMTs grown by molecular beam epitaxy P Wang, D Wang, B Wang, S Mohanty, S Diez, Y Wu, Y Sun, E Ahmadi, ... Applied Physics Letters 119 (8), 2021 | 39 | 2021 |
| High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light-emitting diodes D Wang, K Uesugi, S Xiao, K Norimatsu, H Miyake Applied Physics Express 14 (3), 035505, 2021 | 30 | 2021 |
| Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy D Wang, P Wang, S Mondal, M Hu, D Wang, Y Wu, T Ma, Z Mi Applied Physics Letters 122 (5), 2023 | 29 | 2023 |
| Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐Memory Computing D Wang, P Wang, S Mondal, M Hu, Y Wu, T Ma, Z Mi Advanced Materials 35 (20), 2210628, 2023 | 27 | 2023 |
| Scalable synthesis of monolayer hexagonal boron nitride on graphene with giant bandgap renormalization P Wang, W Lee, JP Corbett, WH Koll, NM Vu, DA Laleyan, Q Wen, Y Wu, ... Advanced materials 34 (21), 2201387, 2022 | 27 | 2022 |
| Quaternary alloy ScAlGaN: A promising strategy to improve the quality of ScAlN P Wang, D Wang, Y Bi, B Wang, J Schwartz, R Hovden, Z Mi Applied Physics Letters 120 (1), 2022 | 26 | 2022 |
| Impact of dislocation density on the ferroelectric properties of ScAlN grown by molecular beam epitaxy D Wang, P Wang, S Mondal, Y Xiao, M Hu, Z Mi Applied Physics Letters 121 (4), 2022 | 25 | 2022 |
| InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering Y Wu, Y Xiao, I Navid, K Sun, Y Malhotra, P Wang, D Wang, Y Xu, ... Light: Science & Applications 11 (1), 294, 2022 | 24 | 2022 |
| Ferroelectric N-polar ScAlN/GaN heterostructures grown by molecular beam epitaxy P Wang, D Wang, S Mondal, Z Mi Applied Physics Letters 121 (2), 2022 | 23 | 2022 |
| Dawn of nitride ferroelectric semiconductors: from materials to devices P Wang, D Wang, S Mondal, M Hu, J Liu, Z Mi Semiconductor Science and Technology 38 (4), 043002, 2023 | 22 | 2023 |
| Experimental evidence of large bandgap energy in atomically thin AlN P Wang, T Wang, H Wang, X Sun, P Huang, B Sheng, X Rong, X Zheng, ... Advanced Functional Materials 29 (36), 1902608, 2019 | 22 | 2019 |
| High‐mobility two‐dimensional electron gas at InGaN/InN heterointerface grown by molecular beam epitaxy T Wang, X Wang, Z Chen, X Sun, P Wang, X Zheng, X Rong, L Yang, ... Advanced Science 5 (9), 1800844, 2018 | 21 | 2018 |
| Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT D Wang, P Wang, M He, J Liu, S Mondal, M Hu, D Wang, Y Wu, T Ma, Z Mi Applied Physics Letters 122 (9), 2023 | 20 | 2023 |
| Repeatable asymmetric resonant tunneling in AlGaN/GaN double barrier structures grown on sapphire D Wang, ZY Chen, T Wang, LY Yang, BW Sheng, HP Liu, J Su, P Wang, ... Applied Physics Letters 114 (7), 2019 | 18 | 2019 |
