| A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs A Martinez, M Bescond, JR Barker, A Svizhenko, MP Anantram, C Millar, ... IEEE Transactions on Electron Devices 54 (9), 2213-2222, 2007 | 168 | 2007 |
| Influence of band-structure on electron ballistic transport in Silicon nanowire MOSFET's: an atomistic study K Nehari, N Cavassilas, JL Autran, M Bescond, D Munteanu, M Lannoo Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005 | 146 | 2005 |
| Effective-mass approach for n-type semiconductor nanowire MOSFETs arbitrarily oriented M Bescond, N Cavassilas, M Lannoo Nanotechnology 18 (25), 255201, 2007 | 78 | 2007 |
| 3D quantum modeling and simulation of multiple-gate nanowire MOSFETs M Bescond, K Nehari, JL Autran, N Cavassilas, D Munteanu, M Lannoo IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 78 | 2004 |
| Flexible photodiodes based on nitride core/shell p–n junction nanowires H Zhang, X Dai, N Guan, A Messanvi, V Neplokh, V Piazza, M Vallo, ... ACS applied materials & interfaces 8 (39), 26198-26206, 2016 | 73 | 2016 |
| Three-dimensional real-space simulation of surface roughness in silicon nanowire FETs C Buran, MG Pala, M Bescond, M Dubois, M Mouis IEEE transactions on electron devices 56 (10), 2186-2192, 2009 | 60 | 2009 |
| 3C-silicon carbide nanowire FET: an experimental and theoretical approach K Rogdakis, SY Lee, M Bescond, SK Lee, E Bano, K Zekentes IEEE Transactions on Electron Devices 55 (8), 1970-1976, 2008 | 56 | 2008 |
| Modeling of nanoscale solar cells: The Green's function formalism N Cavassilas, F Michelini, M Bescond Journal of Renewable and Sustainable Energy 6 (1), 011203, 2014 | 53 | 2014 |
| Full-band study of current across silicon nanowire transistors K Nehari, N Cavassilas, F Michelini, M Bescond, JL Autran, M Lannoo Applied physics letters 90 (13), 132112, 2007 | 53 | 2007 |
| Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green’s function formalism M Bescond, JL Autran, D Munteanu, M Lannoo Solid-State Electronics 48 (4), 567-574, 2004 | 52 | 2004 |
| Single donor induced negative differential resistance in silicon n-type nanowire metal-oxide-semiconductor transistors M Bescond, M Lannoo, L Raymond, F Michelini Journal of Applied Physics 107 (9), 093703, 2010 | 42 | 2010 |
| Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs M Bescond, N Cavassilas, K Kalna, K Nehari, L Raymond, JL Autran, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 40 | 2005 |
| Inelastic scattering in nanoscale devices: One-shot current-conserving lowest-order approximation H Mera, M Lannoo, C Li, N Cavassilas, M Bescond Physical Review B 86 (16), 161404, 2012 | 36 | 2012 |
| Anharmonic phonon-phonon scattering at the interface between two solids by nonequilibrium Green's function formalism Y Guo, Z Zhang, M Bescond, S Xiong, M Nomura, S Volz Physical Review B 103 (17), 174306, 2021 | 34 | 2021 |
| Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes K Rogdakis, M Bescond, E Bano, K Zekentes Nanotechnology 18 (47), 475715, 2007 | 34 | 2007 |
| Quantum mechanical modeling of anharmonic phonon-phonon scattering in nanostructures Y Guo, M Bescond, Z Zhang, M Luisier, M Nomura, S Volz Physical Review B 102 (19), 195412, 2020 | 33 | 2020 |
| Heat conduction theory including phonon coherence Z Zhang, Y Guo, M Bescond, J Chen, M Nomura, S Volz Physical Review Letters 128 (1), 015901, 2022 | 30 | 2022 |
| Multiband quantum transport simulations of ultimate p-type double-gate transistors: Effects of hole-phonon scattering N Cavassilas, F Michelini, M Bescond Journal of Applied Physics 109 (7), 073706, 2011 | 26 | 2011 |
| Modeling of phonon scattering in n-type nanowire transistors using one-shot analytic continuation technique M Bescond, C Li, H Mera, N Cavassilas, M Lannoo Journal of Applied Physics 114 (15), 153712, 2013 | 25 | 2013 |
| Coherent thermal transport in nano-phononic crystals: An overview Z Zhang, Y Guo, M Bescond, J Chen, M Nomura, S Volz APL Materials 9 (8), 081102, 2021 | 22 | 2021 |
