Heinz von Seggern
Heinz von Seggern
Professor für Materialwissenschaft, TU Darmstadt
Verified email at
Cited by
Cited by
Light-emitting field-effect transistor based on a tetracene thin film
A Hepp, H Heil, W Weise, M Ahles, R Schmechel, H von Seggern
Physical review letters 91 (15), 157406, 2003
Luminescence properties of nanocrystalline in different host materials
R Schmechel, M Kennedy, H Von Seggern, H Winkler, M Kolbe, ...
Journal of Applied Physics 89 (3), 1679-1686, 2001
Mechanisms of injection enhancement in organic light-emitting diodes through an Al/LiF electrode
H Heil, J Steiger, S Karg, M Gastel, H Ortner, H Von Seggern, M Stößel
Journal of Applied Physics 89 (1), 420-424, 2001
Physical model of photostimulated luminescence of x‐ray irradiated BaFBr:Eu2+
H Von Seggern, T Voigt, W Knüpfer, G Lange
Journal of applied physics 64 (3), 1405-1412, 1988
Electronic traps in organic transport layers
R Schmechel, H Von Seggern
physica status solidi (a) 201 (6), 1215-1235, 2004
Position-sensitive detector system OBI for high resolution X-ray powder diffraction using on-site readable image plates
M Knapp, V Joco, C Baehtz, HH Brecht, A Berghaeuser, H Ehrenberg, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2004
Confinement of CdSe nanoparticles inside MCM‐41
H Parala, H Winkler, M Kolbe, A Wohlfart, RA Fischer, R Schmechel, ...
Advanced Materials 12 (14), 1050-1055, 2000
Photostimulable x-ray storage phosphors: a review of present understanding
H Seggern
Brazilian journal of physics 29, 254-268, 1999
A pentacene ambipolar transistor: Experiment and theory
R Schmechel, M Ahles, H von Seggern
Journal of Applied Physics 98 (8), 2005
Spatial correlation and photostimulability of defect centers in the x-ray-storage phosphor BaFBr:
M Thoms, H Von Seggern, A Winnacker
Physical Review B 44 (17), 9240, 1991
Light emission from a polymer transistor
M Ahles, A Hepp, R Schmechel, H von Seggern
Applied physics letters 84 (3), 428-430, 2004
Highly efficient energy transfer to a novel organic dye in OLED devices
A Hepp, G Ulrich, R Schmechel, H Von Seggern, R Ziessel
Synthetic metals 146 (1), 11-15, 2004
Dynamics of polarization reversal in virgin and fatigued ferroelectric ceramics by inhomogeneous field mechanism
S Zhukov, YA Genenko, O Hirsch, J Glaum, T Granzow, H von Seggern
Physical Review B 82 (1), 014109, 2010
Quantum‐Confined Gallium Nitride in MCM‐41
H Winkler, A Birkner, V Hagen, I Wolf, R Schmechel, H Seggern, ...
Advanced materials 11 (17), 1444-1448, 1999
N-type organic field-effect transistor based on interface-doped pentacene
M Ahles, R Schmechel, H von Seggern
Applied physics letters 85 (19), 4499-4501, 2004
Identification of TSC peaks and surface‐voltage stability in Teflon FEP
H von Seggern
Journal of Applied Physics 50 (4), 2817-2821, 1979
Order induced charge carrier mobility enhancement in columnar liquid crystal diodes
J Eccher, GC Faria, H Bock, H von Seggern, IH Bechtold
ACS applied materials & interfaces 5 (22), 11935-11943, 2013
Nondestructive laser method for measuring charge profiles in irradiated polymer films
GM Sessler, JE West, R Gerhard-Multhaupt, H von Seggern
IEEE Transactions on Nuclear Science 29 (6), 1644-1649, 1982
Universal polarization switching behavior of disordered ferroelectrics
YA Genenko, S Zhukov, SV Yampolskii, J Schütrumpf, R Dittmer, W Jo, ...
Advanced Functional Materials 22 (10), 2058-2066, 2012
Breakdown-induced polarization buildup in porous fluoropolymer sandwiches: a thermally stable piezoelectret
Z Hu, H von Seggern
Journal of applied physics 99 (2), 2006
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