Sandip Ghosh
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Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy
S Ghosh, P Waltereit, O Brandt, HT Grahn, KH Ploog
Physical Review B 65 (7), 075202, 2002
Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics
A Varghese, D Saha, K Thakar, V Jindal, S Ghosh, NV Medhekar, ...
Nano letters 20 (3), 1707-1717, 2020
Reconfiguring crystal and electronic structures of MoS2 by substitutional doping
J Suh, TL Tan, W Zhao, J Park, DY Lin, TE Park, J Kim, C Jin, N Saigal, ...
Nature communications 9 (1), 199, 2018
Exciton binding energy in bulk MoS2: A reassessment
N Saigal, V Sugunakar, S Ghosh
Applied Physics Letters 108 (13), 2016
Electroreflectance and surface photovoltage spectroscopies of semiconductor structures using an indium–tin–oxide-coated glass electrode in soft contact mode
S Datta, S Ghosh, BM Arora
Review of Scientific Instruments 72 (1), 177-183, 2001
Polarization-dependent spectroscopic study of M-plane GaN on
S Ghosh, P Waltereit, O Brandt, HT Grahn, KH Ploog
Applied physics letters 80 (3), 413-415, 2002
Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire
S Ghosh, P Misra, HT Grahn, B Imer, S Nakamura, SP DenBaars, ...
Journal of applied physics 98 (2), 2005
Evidence for two distinct defect related luminescence features in monolayer MoS2
N Saigal, S Ghosh
Applied Physics Letters 109 (12), 2016
A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk …
VK Dixit, S Porwal, SD Singh, TK Sharma, S Ghosh, SM Oak
Journal of Physics D: Applied Physics 47 (6), 065103, 2014
Strained M-plane GaN for the realization of polarization-sensitive photodetectors
S Ghosh, O Brandt, HT Grahn, KH Ploog
Applied Physics Letters 81 (18), 3380-3382, 2002
Optical polarization properties of interband transitions in strained group-III-nitride alloy films on GaN substrates with nonpolar orientation
J Bhattacharyya, S Ghosh, HT Grahn
Applied Physics Letters 93 (5), 2008
Polarized photoluminescence and absorption in A-plane InN films
J Bhattacharyya, S Ghosh, MR Gokhale, BM Arora, H Lu, WJ Schaff
Applied physics letters 89 (15), 2006
Optimum excitation photon energy for CdSe–ZnS core–shell quantum dot based luminescence imaging
A Mukherjee, S Ghosh
Journal of Physics D: Applied Physics 45 (19), 195103, 2012
Magneto-optical Kerr effect spectroscopy based study of Landé g-factor for holes in GaAs/AlGaAs single quantum wells under low magnetic fields
A Arora, A Mandal, S Chakrabarti, S Ghosh
Journal of Applied Physics 113 (21), 2013
Very narrow-band ultraviolet photodetection based on strained M-plane GaN films
S Ghosh, C Rivera, JL Pau, E Muñoz, O Brandt, HT Grahn
Applied Physics Letters 90 (9), 2007
Determination of InN–GaN heterostructure band offsets from internal photoemission measurements
ZH Mahmood, AP Shah, A Kadir, MR Gokhale, S Ghosh, A Bhattacharya, ...
Applied Physics Letters 91 (15), 2007
Photoreflectance line shape of excitonic transitions analyzed with a redefined set of fitting parameters
S Ghosh, HT Grahn
Journal of applied physics 90 (1), 500-502, 2001
Growth, structural and optical characterization of wurtzite GaP nanowires
CB Maliakkal, M Gokhale, J Parmar, R Bapat, B Chalke, S Ghosh, A Bhattacharya
Nanotechnology 30, 254002, 2019
The role of hydrostatic stress in determining the bandgap of InN epilayers
A Kadir, T Ganguli, R Kumar, MR Gokhale, AP Shah, S Ghosh, BM Arora, ...
Applied Physics Letters 91 (11), 2007
Polarization-dependent beam switch based on an M-plane GaN∕ AlN distributed Bragg reflector
DM Schaadt, O Brandt, S Ghosh, T Flissikowski, U Jahn, HT Grahn
Applied physics letters 90 (23), 2007
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