Sandip Ghosh

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Brij Mohan AroraVisiting Professor , Indian Institute of Technology BombayVerified email at ee.iitb.ac.in
Holger T. GrahnPaul-Drude-Institut für FestkörperelektronikVerified email at pdi-berlin.de
Oliver BrandtSenior scientist, Paul-Drude-Institut für FestkörperelektronikVerified email at pdi-berlin.de
Nihit SaigalResearch Associate at University of MuensterVerified email at uni-muenster.de
Vishwas JindalTata Institute of Fundamental PhysicsVerified email at tifr.res.in
Jayeeta BhattacharyyaIndian Institue of Technology MadrasVerified email at smail.iitm.ac.in
Arnab BhattacharyaProfessor, Dept. of CMPMS, Tata Institute of Fundamental ResearchVerified email at tifr.res.in
Ashish AroraAssistant Professor, IISER Pune (ResID AAN-2736-2020)Verified email at iiserpune.ac.in
Amlan MukherjeePost doctoral researcher, 3. Physikalisches Institut, University of StuttgartVerified email at physik.uni-stuttgart.de
Dipankar JanaCNRSVerified email at lncmi.cnrs.fr
Tarun Kumar SharmaProfessor, HBNI Mumbai & Head, Materials Science Section, RRCAT-Indore, IndiaVerified email at rrcat.gov.in
DIBYASANKAR DASResearch scholar, Tata Institute of Fundamental Research, MumbaiVerified email at tifr.res.in

Sandip Ghosh

Tata Institute of Fundamental Research

Verified email at tifr.res.in

semiconductor physics optical spectroscopy


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Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy S Ghosh, P Waltereit, O Brandt, HT Grahn, KH Ploog Physical Review B 65 (7), 075202, 2002	299	2002
Near-Direct Bandgap WSe₂/ReS₂ Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics A Varghese, D Saha, K Thakar, V Jindal, S Ghosh, NV Medhekar, ... Nano letters 20 (3), 1707-1717, 2020	146	2020
Reconfiguring crystal and electronic structures of MoS₂ by substitutional doping J Suh, TL Tan, W Zhao, J Park, DY Lin, TE Park, J Kim, C Jin, N Saigal, ... Nature communications 9 (1), 199, 2018	138	2018
Exciton binding energy in bulk MoS2: A reassessment N Saigal, V Sugunakar, S Ghosh Applied Physics Letters 108 (13), 2016	90	2016
Electroreflectance and surface photovoltage spectroscopies of semiconductor structures using an indium–tin–oxide-coated glass electrode in soft contact mode S Datta, S Ghosh, BM Arora Review of Scientific Instruments 72 (1), 177-183, 2001	77	2001
Polarization-dependent spectroscopic study of M-plane GaN on S Ghosh, P Waltereit, O Brandt, HT Grahn, KH Ploog Applied physics letters 80 (3), 413-415, 2002	70	2002
Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire S Ghosh, P Misra, HT Grahn, B Imer, S Nakamura, SP DenBaars, ... Journal of applied physics 98 (2), 2005	61	2005
Evidence for two distinct defect related luminescence features in monolayer MoS2 N Saigal, S Ghosh Applied Physics Letters 109 (12), 2016	56	2016
A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk … VK Dixit, S Porwal, SD Singh, TK Sharma, S Ghosh, SM Oak Journal of Physics D: Applied Physics 47 (6), 065103, 2014	53	2014
Strained M-plane GaN for the realization of polarization-sensitive photodetectors S Ghosh, O Brandt, HT Grahn, KH Ploog Applied Physics Letters 81 (18), 3380-3382, 2002	46	2002
Optical polarization properties of interband transitions in strained group-III-nitride alloy films on GaN substrates with nonpolar orientation J Bhattacharyya, S Ghosh, HT Grahn Applied Physics Letters 93 (5), 2008	39	2008
Polarized photoluminescence and absorption in A-plane InN films J Bhattacharyya, S Ghosh, MR Gokhale, BM Arora, H Lu, WJ Schaff Applied physics letters 89 (15), 2006	38	2006
Optimum excitation photon energy for CdSe–ZnS core–shell quantum dot based luminescence imaging A Mukherjee, S Ghosh Journal of Physics D: Applied Physics 45 (19), 195103, 2012	37	2012
Magneto-optical Kerr effect spectroscopy based study of Landé g-factor for holes in GaAs/AlGaAs single quantum wells under low magnetic fields A Arora, A Mandal, S Chakrabarti, S Ghosh Journal of Applied Physics 113 (21), 2013	35	2013
Very narrow-band ultraviolet photodetection based on strained M-plane GaN films S Ghosh, C Rivera, JL Pau, E Muñoz, O Brandt, HT Grahn Applied Physics Letters 90 (9), 2007	33	2007
Determination of InN–GaN heterostructure band offsets from internal photoemission measurements ZH Mahmood, AP Shah, A Kadir, MR Gokhale, S Ghosh, A Bhattacharya, ... Applied Physics Letters 91 (15), 2007	27	2007
Photoreflectance line shape of excitonic transitions analyzed with a redefined set of fitting parameters S Ghosh, HT Grahn Journal of applied physics 90 (1), 500-502, 2001	26	2001
Growth, structural and optical characterization of wurtzite GaP nanowires CB Maliakkal, M Gokhale, J Parmar, R Bapat, B Chalke, S Ghosh, A Bhattacharya Nanotechnology 30, 254002, 2019	25	2019
The role of hydrostatic stress in determining the bandgap of InN epilayers A Kadir, T Ganguli, R Kumar, MR Gokhale, AP Shah, S Ghosh, BM Arora, ... Applied Physics Letters 91 (11), 2007	25	2007
Polarization-dependent beam switch based on an M-plane GaN∕ AlN distributed Bragg reflector DM Schaadt, O Brandt, S Ghosh, T Flissikowski, U Jahn, HT Grahn Applied physics letters 90 (23), 2007	24	2007

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