| Tunable bandgap in silicene and germanene Z Ni, Q Liu, K Tang, J Zheng, J Zhou, R Qin, Z Gao, D Yu, J Lu Nano letters 12 (1), 113-118, 2012 | 1455 | 2012 |
| Tunable and sizable band gap in silicene by surface adsorption R Quhe, R Fei, Q Liu, J Zheng, H Li, C Xu, Z Ni, Y Wang, D Yu, Z Gao, ... Scientific reports 2 (1), 853, 2012 | 297 | 2012 |
| Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations H Zhong, R Quhe, Y Wang, Z Ni, M Ye, Z Song, Y Pan, J Yang, L Yang, ... Scientific reports 6 (1), 21786, 2016 | 295 | 2016 |
| Does p-type ohmic contact exist in WSe 2–metal interfaces? Y Wang, RX Yang, R Quhe, H Zhong, L Cong, M Ye, Z Ni, Z Song, J Yang, ... Nanoscale 8 (2), 1179-1191, 2016 | 189 | 2016 |
| Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistors Z Ni, H Zhong, X Jiang, R Quhe, G Luo, Y Wang, M Ye, J Yang, J Shi, J Lu Nanoscale 6 (13), 7609-7618, 2014 | 184 | 2014 |
| Half-metallic silicene and germanene nanoribbons: towards high-performance spintronics device Y Wang, J Zheng, Z Ni, R Fei, Q Liu, R Quhe, C Xu, J Zhou, Z Gao, J Lu Nano 7 (05), 1250037, 2012 | 116 | 2012 |
| Does the Dirac cone exist in silicene on metal substrates? R Quhe, Y Yuan, J Zheng, Y Wang, Z Ni, J Shi, D Yu, J Yang, J Lu Scientific Reports 4 (1), 5476, 2014 | 113 | 2014 |
| Performance Upper Limit of sub‐10 nm Monolayer MoS2 Transistors Z Ni, M Ye, J Ma, Y Wang, R Quhe, J Zheng, L Dai, D Yu, J Shi, J Yang, ... Advanced Electronic Materials 2 (9), 1600191, 2016 | 109 | 2016 |
| Graphdiyne–metal contacts and graphdiyne transistors Y Pan, Y Wang, L Wang, H Zhong, R Quhe, Z Ni, M Ye, WN Mei, J Shi, ... Nanoscale 7 (5), 2116-2127, 2015 | 109 | 2015 |
| Interfacial properties of bilayer and trilayer graphene on metal substrates J Zheng, Y Wang, L Wang, R Quhe, Z Ni, WN Mei, Z Gao, D Yu, J Shi, J Lu Scientific reports 3 (1), 2081, 2013 | 102 | 2013 |
| Tunable band gap in germanene by surface adsorption M Ye, R Quhe, J Zheng, Z Ni, Y Wang, Y Yuan, G Tse, J Shi, Z Gao, J Lu Physica E: Low-dimensional Systems and Nanostructures 59, 60-65, 2014 | 100 | 2014 |
| Tunable band gap in few-layer graphene by surface adsorption R Quhe, J Ma, Z Zeng, K Tang, J Zheng, Y Wang, Z Ni, L Wang, Z Gao, ... Scientific Reports 3 (1), 1794, 2013 | 67 | 2013 |
| All‐Metallic Vertical Transistors Based on Stacked Dirac Materials Y Wang, Z Ni, Q Liu, R Quhe, J Zheng, M Ye, D Yu, J Shi, J Yang, J Li, ... Advanced Functional Materials 25 (1), 68-77, 2015 | 65 | 2015 |
| Silicene nanomesh F Pan, Y Wang, K Jiang, Z Ni, J Ma, J Zheng, R Quhe, J Shi, J Yang, ... Scientific reports 5 (1), 9075, 2015 | 53 | 2015 |
| Strong band hybridization between silicene and Ag (1 1 1) substrate Y Yuan, R Quhe, J Zheng, Y Wang, Z Ni, J Shi, J Lu Physica E: Low-dimensional Systems and Nanostructures 58, 38-42, 2014 | 48 | 2014 |
| Visualizing type-II Weyl points in tungsten ditelluride by quasiparticle interference CL Lin, R Arafune, RY Liu, M Yoshimura, B Feng, K Kawahara, Z Ni, ... ACS nano 11 (11), 11459-11465, 2017 | 46 | 2017 |
| Germanene and stanene on two-dimensional substrates: Dirac cone and invariant Z Ni, E Minamitani, Y Ando, S Watanabe Physical Review B 96 (7), 075427, 2017 | 46 | 2017 |
| The electronic structure of quasi-free-standing germanene on monolayer MX (M= Ga, In; X= S, Se, Te) Z Ni, E Minamitani, Y Ando, S Watanabe Physical Chemistry Chemical Physics 17 (29), 19039-19044, 2015 | 33 | 2015 |
| Gate-induced half-metallicity in semihydrogenated silicene F Pan, R Quhe, Q Ge, J Zheng, Z Ni, Y Wang, Z Gao, L Wang, J Lu Physica E: Low-dimensional Systems and Nanostructures 56, 43-47, 2014 | 20 | 2014 |
| Intrinsic region length scaling of heavily doped carbon nanotube p–i–n junctions Z Li, J Zheng, Z Ni, R Quhe, Y Wang, Z Gao, J Lu Nanoscale 5 (15), 6999-7004, 2013 | 19 | 2013 |
