Caroline Chèze
Caroline Chèze
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Cited by
Silicon-nanowire transistors with intruded nickel-silicide contacts
WM Weber, L Geelhaar, AP Graham, E Unger, GS Duesberg, M Liebau, ...
Nano letters 6 (12), 2660-2666, 2006
Direct comparison of catalyst-free and catalyst-induced GaN nanowires
C Chèze, L Geelhaar, O Brandt, WM Weber, H Riechert, S Münch, ...
Nano Research 3, 528-536, 2010
Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons
O Brandt, C Pfüller, C Chèze, L Geelhaar, H Riechert
Physical review b 81 (4), 045302, 2010
Properties of GaN nanowires grown by molecular beam epitaxy
L Geelhaar, C Cheze, B Jenichen, O Brandt, C Pfüller, S Münch, ...
IEEE Journal of Selected Topics in Quantum Electronics 17 (4), 878-888, 2011
Axial and radial growth of Ni-induced GaN nanowires
L Geelhaar, C Cheze, WM Weber, R Averbeck, H Riechert, T Kehagias, ...
Applied Physics Letters 91 (9), 2007
Unpinning the Fermi level of GaN nanowires by ultraviolet radiation
C Pfüller, O Brandt, F Grosse, T Flissikowski, C Chèze, V Consonni, ...
Physical Review B 82 (4), 045320, 2010
In situ investigation of self-induced GaN nanowire nucleation on Si
C Chèze, L Geelhaar, A Trampert, H Riechert
Applied Physics Letters 97 (4), 2010
Different growth rates for catalyst-induced and self-induced GaN nanowires
C Chèze, L Geelhaar, B Jenichen, H Riechert
Applied Physics Letters 97 (15), 2010
Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires
O Brandt, S Fernández-Garrido, JK Zettler, E Luna, U Jahn, C Chèze, ...
Crystal growth & design 14 (5), 2246-2253, 2014
Collector phase transitions during vapor− solid− solid nucleation of GaN nanowires
C Cheze, L Geelhaar, A Trampert, O Brandt, H Riechert
Nano letters 10 (9), 3426-3431, 2010
Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells
L Lymperakis, T Schulz, C Freysoldt, M Anikeeva, Z Chen, X Zheng, ...
Physical Review Materials 2 (1), 011601, 2018
Silicon to nickel‐silicide axial nanowire heterostructures for high performance electronics
WM Weber, L Geelhaar, E Unger, C Chèze, F Kreupl, H Riechert, P Lugli
physica status solidi (b) 244 (11), 4170-4175, 2007
Time-resolved photoluminescence spectroscopy of individual GaN nanowires
A Gorgis, T Flissikowski, O Brandt, C Chèze, L Geelhaar, H Riechert, ...
Physical review B 86 (4), 041302, 2012
Silicon nanowires: catalytic growth and electrical characterization
WM Weber, GS Duesberg, AP Graham, M Liebau, E Unger, C Cheze, ...
physica status solidi (b) 243 (13), 3340-3345, 2006
Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
R Kudrawiec, M Gladysiewicz, L Janicki, J Misiewicz, G Cywinski, ...
Applied Physics Letters 100 (18), 2012
AlGaN-free laser diodes by plasma-assisted molecular beam epitaxy
C Skierbiszewski, M Siekacz, H Turski, G Muzioł, M Sawicka, ...
Applied physics express 5 (2), 022104, 2012
Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit
C Pfüller, O Brandt, T Flissikowski, C Chèze, L Geelhaar, HT Grahn, ...
Nano Research 3, 881-888, 2010
Nano Res. 3, 528 (2010)
C Chèze, L Geelhaar, O Brandt, W Weber, H Riechert, S Münch, ...
Growth mechanisms in semipolar (202¯ 1) and nonpolar m-plane (101¯ 0) algan/gan structures grown by pambe under n-rich conditions
M Sawicka, C Cheze, H Turski, J Smalc-Koziorowska, M Kryśko, S Kret, ...
Journal of crystal growth 377, 184-191, 2013
Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface
H Turski, F Krzyżewski, A Feduniewicz-Żmuda, P Wolny, M Siekacz, ...
Applied Surface Science 484, 771-780, 2019
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