Jing Zhang (张菁)
Jing Zhang (张菁)
Institute of Semiconductor, Chinese Academy of Sciences
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Ultrafast formation of interlayer hot excitons in atomically thin MoS 2/WS 2 heterostructures
H Chen*, X Wen*, J Zhang*, T Wu, Y Gong, X Zhang, J Yuan, C Yi, J Lou, ...
Nature communications 7, 12512, 2016
Argon Plasma Induced Phase Transition in Monolayer MoS2
J Zhu, Z Wang, H Yu, N Li, J Zhang, JL Meng, M Liao, J Zhao, X Lu, L Du, ...
Journal of the American Chemical Society 139 (30), 10216-10219, 2017
Oxygen-assisted chemical vapor deposition growth of large single-crystal and high-quality monolayer MoS2
W Chen*, J Zhao*, J Zhang*, L Gu, Z Yang, X Li, H Yu, X Zhu, R Yang, ...
Journal of the American Chemical Society 137 (50), 15632-15635, 2015
Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes
J Zhang, H Yu, W Chen, X Tian, D Liu, M Cheng, G Xie, W Yang, R Yang, ...
ACS nano 8 (6), 6024-6030, 2014
Boundary activated hydrogen evolution reaction on monolayer MoS2
J Zhu, ZC Wang, H Dai, Q Wang, R Yang, H Yu, M Liao, J Zhang, W Chen, ...
Nature communications 10 (1), 1348, 2019
Graphene‐Contacted Ultrashort Channel Monolayer MoS2 Transistors
L Xie, M Liao, S Wang, H Yu, L Du, J Tang, J Zhao, J Zhang, P Chen, X Lu, ...
Advanced Materials 29 (37), 1702522, 2017
Observation of Strong Interlayer Coupling in MoS2/WS2 Heterostructures
J Zhang, J Wang, P Chen, Y Sun, S Wu, Z Jia, X Lu, H Yu, W Chen, J Zhu, ...
Advanced Materials 28 (10), 1950-1956, 2016
Thermally induced graphene rotation on hexagonal boron nitride
D Wang, G Chen, C Li, M Cheng, W Yang, S Wu, G Xie, J Zhang, J Zhao, ...
Physical review letters 116 (12), 126101, 2016
Precisely Aligned Monolayer MoS2 Epitaxially Grown on h‐BN basal Plane
H Yu, Z Yang, L Du, J Zhang, J Shi, W Chen, P Chen, M Liao, J Zhao, ...
Small 13 (7), 1603005, 2017
Engineering Valley Polarization of Monolayer WS2: A Physical Doping Approach
S Feng, C Cong, S Konabe, J Zhang, J Shang, Y Chen, C Zou, B Cao, ...
Small 15 (12), 1805503, 2019
Gate tunable WSe 2–BP van der Waals heterojunction devices
P Chen, TT Zhang, J Zhang, J Xiang, H Yu, S Wu, X Lu, G Wang, F Wen, ...
Nanoscale 8 (6), 3254-3258, 2016
Gate tunable MoS2–black phosphorus heterojunction devices
P Chen, J Xiang, H Yu, J Zhang, G Xie, S Wu, X Lu, G Wang, J Zhao, ...
2D Materials 2 (3), 034009, 2015
Rolling Up a Monolayer MoS2 Sheet
J Meng, G Wang, X Li, X Lu, J Zhang, H Yu, W Chen, L Du, M Liao, J Zhao, ...
Small 12 (28), 3770-3774, 2016
A general route towards defect and pore engineering in graphene
G Xie, R Yang, P Chen, J Zhang, X Tian, S Wu, J Zhao, M Cheng, W Yang, ...
Small 10 (11), 2280-2284, 2014
Large room-temperature magnetoresistance in van der Waals ferromagnet/semiconductor junctions
W Zhu, S Xie, H Lin, G Zhang, H Wu, T Hu, Z Wang, X Zhang, J Xu, ...
Chinese Physics Letters 39 (12), 128501, 2022
Two-step growth of graphene with separate controlling nucleation and edge growth directly on SiO2 substrates
D Liu, W Yang, L Zhang, J Zhang, J Meng, R Yang, G Zhang, D Shi
Carbon 72, 387-392, 2014
In‐Plane Anisotropic Thermal Conductivity of Few‐Layered Transition Metal Dichalcogenide Td‐WTe2
Y Chen, B Peng, C Cong, J Shang, L Wu, W Yang, J Zhou, P Yu, H Zhang, ...
Advanced Materials 31 (7), 1804979, 2019
Enhancing and controlling valley magnetic response in MoS2/WS2 heterostructures by all-optical route
J Zhang, L Du, S Feng, RW Zhang, B Cao, C Zou, Y Chen, M Liao, ...
Nature Communications 10 (1), 4226, 2019
Enhancement of carrier mobility in MoS2 field effect transistors by a SiO2 protective layer
PZ Shao, HM Zhao, HW Cao, XF Wang, Y Pang, YX Li, NQ Deng, J Zhang, ...
Applied Physics Letters 108 (20), 2016
A route toward digital manipulation of water nanodroplets on surfaces
M Cheng, D Wang, Z Sun, J Zhao, R Yang, G Wang, W Yang, G Xie, ...
ACS nano 8 (4), 3955-3960, 2014
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