Follow
Jing Zhang (张菁)
Jing Zhang (张菁)
Institute of Semiconductor, Chinese Academy of Sciences
Verified email at semi.ac.cn
Title
Cited by
Cited by
Year
Ultrafast formation of interlayer hot excitons in atomically thin MoS 2/WS 2 heterostructures
H Chen*, X Wen*, J Zhang*, T Wu, Y Gong, X Zhang, J Yuan, C Yi, J Lou, ...
Nature communications 7, 12512, 2016
3972016
Argon Plasma Induced Phase Transition in Monolayer MoS2
J Zhu, Z Wang, H Yu, N Li, J Zhang, JL Meng, M Liao, J Zhao, X Lu, L Du, ...
Journal of the American Chemical Society 139 (30), 10216-10219, 2017
3602017
Oxygen-assisted chemical vapor deposition growth of large single-crystal and high-quality monolayer MoS2
W Chen*, J Zhao*, J Zhang*, L Gu, Z Yang, X Li, H Yu, X Zhu, R Yang, ...
Journal of the American Chemical Society 137 (50), 15632-15635, 2015
3542015
Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes
J Zhang, H Yu, W Chen, X Tian, D Liu, M Cheng, G Xie, W Yang, R Yang, ...
ACS nano 8 (6), 6024-6030, 2014
3212014
Boundary activated hydrogen evolution reaction on monolayer MoS2
J Zhu, ZC Wang, H Dai, Q Wang, R Yang, H Yu, M Liao, J Zhang, W Chen, ...
Nature communications 10 (1), 1348, 2019
3132019
Graphene‐Contacted Ultrashort Channel Monolayer MoS2 Transistors
L Xie, M Liao, S Wang, H Yu, L Du, J Tang, J Zhao, J Zhang, P Chen, X Lu, ...
Advanced Materials 29 (37), 1702522, 2017
2502017
Observation of Strong Interlayer Coupling in MoS2/WS2 Heterostructures
J Zhang, J Wang, P Chen, Y Sun, S Wu, Z Jia, X Lu, H Yu, W Chen, J Zhu, ...
Advanced Materials 28 (10), 1950-1956, 2016
2492016
Thermally induced graphene rotation on hexagonal boron nitride
D Wang, G Chen, C Li, M Cheng, W Yang, S Wu, G Xie, J Zhang, J Zhao, ...
Physical review letters 116 (12), 126101, 2016
1722016
Precisely Aligned Monolayer MoS2 Epitaxially Grown on h‐BN basal Plane
H Yu, Z Yang, L Du, J Zhang, J Shi, W Chen, P Chen, M Liao, J Zhao, ...
Small 13 (7), 1603005, 2017
1052017
Engineering Valley Polarization of Monolayer WS2: A Physical Doping Approach
S Feng, C Cong, S Konabe, J Zhang, J Shang, Y Chen, C Zou, B Cao, ...
Small 15 (12), 1805503, 2019
732019
Gate tunable WSe 2–BP van der Waals heterojunction devices
P Chen, TT Zhang, J Zhang, J Xiang, H Yu, S Wu, X Lu, G Wang, F Wen, ...
Nanoscale 8 (6), 3254-3258, 2016
662016
Gate tunable MoS2–black phosphorus heterojunction devices
P Chen, J Xiang, H Yu, J Zhang, G Xie, S Wu, X Lu, G Wang, J Zhao, ...
2D Materials 2 (3), 034009, 2015
652015
Rolling Up a Monolayer MoS2 Sheet
J Meng, G Wang, X Li, X Lu, J Zhang, H Yu, W Chen, L Du, M Liao, J Zhao, ...
Small 12 (28), 3770-3774, 2016
642016
A general route towards defect and pore engineering in graphene
G Xie, R Yang, P Chen, J Zhang, X Tian, S Wu, J Zhao, M Cheng, W Yang, ...
Small 10 (11), 2280-2284, 2014
582014
Large room-temperature magnetoresistance in van der Waals ferromagnet/semiconductor junctions
W Zhu, S Xie, H Lin, G Zhang, H Wu, T Hu, Z Wang, X Zhang, J Xu, ...
Chinese Physics Letters 39 (12), 128501, 2022
572022
Two-step growth of graphene with separate controlling nucleation and edge growth directly on SiO2 substrates
D Liu, W Yang, L Zhang, J Zhang, J Meng, R Yang, G Zhang, D Shi
Carbon 72, 387-392, 2014
532014
In‐Plane Anisotropic Thermal Conductivity of Few‐Layered Transition Metal Dichalcogenide Td‐WTe2
Y Chen, B Peng, C Cong, J Shang, L Wu, W Yang, J Zhou, P Yu, H Zhang, ...
Advanced Materials 31 (7), 1804979, 2019
472019
Enhancing and controlling valley magnetic response in MoS2/WS2 heterostructures by all-optical route
J Zhang, L Du, S Feng, RW Zhang, B Cao, C Zou, Y Chen, M Liao, ...
Nature Communications 10 (1), 4226, 2019
432019
Enhancement of carrier mobility in MoS2 field effect transistors by a SiO2 protective layer
PZ Shao, HM Zhao, HW Cao, XF Wang, Y Pang, YX Li, NQ Deng, J Zhang, ...
Applied Physics Letters 108 (20), 2016
392016
A route toward digital manipulation of water nanodroplets on surfaces
M Cheng, D Wang, Z Sun, J Zhao, R Yang, G Wang, W Yang, G Xie, ...
ACS nano 8 (4), 3955-3960, 2014
372014
The system can't perform the operation now. Try again later.
Articles 1–20