| Method for conformal plasma immersed ion implantation assisted by atomic layer deposition H Hanawa, SM Cho, MA Foad US Patent 8,709,924, 2014 | 430 | 2014 |
| Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls D Choi, DH Lee, T Poon, M Vellaikal, P Porshnev, M Foad US Patent 8,642,128, 2014 | 375 | 2014 |
| Removal of surface dopants from a substrate K Ramaswamy, KS Collins, B Gallo, H Hanawa, MA Foad, MA Hilkene, ... US Patent 7,989,329, 2011 | 373 | 2011 |
| Mechanism of Boron Diffusion in Silicon: An Ab Initio and Kinetic Monte Carlo Study B Sadigh, TJ Lenosky, SK Theiss, MJ Caturla, TD de la Rubia, MA Foad Physical review letters 83 (21), 4341, 1999 | 236 | 1999 |
| Dry photoresist stripping process and apparatus SM Cho, MA Foad US Patent App. 12/001,472, 2008 | 198 | 2008 |
| Chamber for processing hard disk drive substrates MA Foad, MA Hilkene, PI Porshnev, JA Marin, MD Scotney-Castle US Patent App. 12/955,619, 2011 | 156 | 2011 |
| Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs G Timp, A Agarwal, FH Baumann, T Boone, M Buonanno, R Cirelli, ... International Electron Devices Meeting. IEDM Technical Digest, 930-932, 1997 | 118 | 1997 |
| Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition H Hanawa, SM Cho, MA Foad US Patent App. 12/028,423, 2009 | 81 | 2009 |
| Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor C Beasley, R Hofmann, M Foad, T Michaelson US Patent 9,354,508, 2016 | 70 | 2016 |
| Boron ion sources for ion implantation apparatus MA Foad US Patent 5,977,552, 1999 | 69 | 1999 |
| Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal Y Ma, KZ Ahmed, KL Cunningham, RC McIntosh, AJ Mayur, H Liang, ... US Patent 7,078,302, 2006 | 61 | 2006 |
| Large enhancement of boron solubility in silicon due to biaxial stress B Sadigh, TJ Lenosky, MJ Caturla, AA Quong, LX Benedict, ... Applied physics letters 80 (25), 4738-4740, 2002 | 61 | 2002 |
| CH4/H2: A universal reactive ion etch for II‐VI semiconductors? MA Foad, CDW Wilkinson, C Dunscomb, RH Williams Applied physics letters 60 (20), 2531-2533, 1992 | 61 | 1992 |
| Optimizing boron junctions through point defect and stress engineering using carbon and germanium co-implants V Moroz, YS Oh, D Pramanik, H Graoui, MA Foad Applied Physics Letters 87 (5), 2005 | 57 | 2005 |
| Raman scattering of coupled longitudinal optical phonon‐plasmon modes in dry etched n+‐GaAs PD Wang, MA Foad, CM Sotomayor‐Torres, S Thoms, M Watt, R Cheung, ... Journal of applied physics 71 (8), 3754-3759, 1992 | 57 | 1992 |
| Model for conductance in dry‐etch damaged n‐GaAs structures M Rahman, NP Johnson, MA Foad, AR Long, MC Holland, ... Applied physics letters 61 (19), 2335-2337, 1992 | 52 | 1992 |
| Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans JA Sharp, NEB Cowern, RP Webb, KJ Kirkby, D Giubertoni, S Gennaro, ... Applied physics letters 89 (19), 2006 | 50 | 2006 |
| Extreme ultraviolet capping layer and method of manufacturing and lithography thereof C Beasley, R Hofmann, MA Foad, R Beckstrom III US Patent 9,739,913, 2017 | 47 | 2017 |
| Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor R Hofmann, C Beasley, M Foad US Patent App. 14/139,415, 2014 | 46 | 2014 |
| Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements A Al-Bayati, B Adibi, M Foad, S Somekh US Patent 7,225,047, 2007 | 46 | 2007 |
