Majeed A Foad
Majeed A Foad
Conservia Prime Technologies
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Cited by
Cited by
Mechanism of Boron Diffusion in Silicon: An Ab Initio and Kinetic Monte Carlo Study
B Sadigh, TJ Lenosky, SK Theiss, MJ Caturla, TD de la Rubia, MA Foad
Physical review letters 83 (21), 4341, 1999
Method for conformal plasma immersed ion implantation assisted by atomic layer deposition
H Hanawa, SM Cho, MA Foad
US Patent 8,709,924, 2014
Dry photoresist stripping process and apparatus
SM Cho, MA Foad
US Patent App. 12/001,472, 2008
Removal of surface dopants from a substrate
K Ramaswamy, KS Collins, B Gallo, H Hanawa, MA Foad, MA Hilkene, ...
US Patent 7,989,329, 2011
Chamber for processing hard disk drive substrates
MA Foad, MA Hilkene, PI Porshnev, JA Marin, MD Scotney-Castle
US Patent App. 12/955,619, 2011
Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls
D Choi, DH Lee, T Poon, M Vellaikal, P Porshnev, M Foad
US Patent 8,642,128, 2014
Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs
G Timp, A Agarwal, FH Baumann, T Boone, M Buonanno, R Cirelli, ...
International Electron Devices Meeting. IEDM Technical Digest, 930-932, 1997
Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition
H Hanawa, SM Cho, MA Foad
US Patent App. 12/028,423, 2009
Boron ion sources for ion implantation apparatus
MA Foad
US Patent 5,977,552, 1999
Large enhancement of boron solubility in silicon due to biaxial stress
B Sadigh, TJ Lenosky, MJ Caturla, AA Quong, LX Benedict, ...
Applied physics letters 80 (25), 4738-4740, 2002
CH4/H2: A universal reactive ion etch for II‐VI semiconductors?
MA Foad, CDW Wilkinson, C Dunscomb, RH Williams
Applied physics letters 60 (20), 2531-2533, 1992
Raman scattering of coupled longitudinal optical phonon‐plasmon modes in dry etched n+‐GaAs
PD Wang, MA Foad, CM Sotomayor‐Torres, S Thoms, M Watt, R Cheung, ...
Journal of applied physics 71 (8), 3754-3759, 1992
Optimizing boron junctions through point defect and stress engineering using carbon and germanium co-implants
V Moroz, YS Oh, D Pramanik, H Graoui, MA Foad
Applied Physics Letters 87 (5), 051908, 2005
Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans
JA Sharp, NEB Cowern, RP Webb, KJ Kirkby, D Giubertoni, S Gennaro, ...
Applied physics letters 89 (19), 192105, 2006
Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
A Al-Bayati, B Adibi, M Foad, S Somekh
US Patent 7,225,047, 2007
Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal
Y Ma, KZ Ahmed, KL Cunningham, RC McIntosh, AJ Mayur, H Liang, ...
US Patent 7,078,302, 2006
Model for conductance in dry‐etch damaged n‐GaAs structures
M Rahman, NP Johnson, MA Foad, AR Long, MC Holland, ...
Applied physics letters 61 (19), 2335-2337, 1992
Ion implanter with post mass selection deceleration
JG England, S Moffatt, DG Armour, M Foad
US Patent 5,969,366, 1999
High-resolution dry etching of zinc telluride: characterization of etched surfaces by x-ray photoelectron spectroscopy, photoluminescence and Raman scattering
MA Foad, M Watt, AP Smart, CMS Torres, CDW Wilkinson, W Kuhn, ...
Semiconductor Science and Technology 6 (9A), A115, 1991
New technique for dry etch damage assessment of semiconductors
MA Foad, S Thoms, CDW Wilkinson
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
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