| Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults F Tendille, P De Mierry, P Vennéguès, S Chenot, M Teisseire Journal of Crystal Growth 404, 177-183, 2014 | 81 | 2014 |
| Study of defect management in the growth of semipolar (11-22) GaN on patterned sapphire P Vennéguès, F Tendille, P De Mierry Journal of Physics D: Applied Physics 48 (32), 325103, 2015 | 20 | 2015 |
| Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution N Al Taradeh, E Frayssinet, C Rodriguez, F Morancho, C Sonneville, ... Energies 14 (14), 4241, 2021 | 18 | 2021 |
| Ultraviolet light emitting diodes using III-N quantum dots J Brault, S Matta, TH Ngo, D Rosales, M Leroux, B Damilano, ... Materials Science in Semiconductor Processing 55, 95-101, 2016 | 16 | 2016 |
| Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate F Tendille, M Hugues, P Vennéguès, M Teisseire, P De Mierry Semiconductor Science and Technology 30 (6), 065001, 2015 | 16 | 2015 |
| Green emission from semipolar InGaN quantum wells grown on low‐defect (112¯ 2) GaN templates fabricated on patterned r‐sapphire P de Mierry, L Kappei, F Tendille, P Vennéguès, M Leroux, ... physica status solidi (b) 253 (1), 105-111, 2016 | 9 | 2016 |
| Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters TH Ngo, R Comyn, E Frayssinet, H Chauveau, S Chenot, B Damilano, ... Journal of Crystal Growth 552, 125911, 2020 | 8 | 2020 |
| Selective heteroepitaxy on deeply grooved substrate: A route to low cost semipolar GaN platforms of bulk quality F Tendille, D Martin, P Vennéguès, N Grandjean, P De Mierry Applied Physics Letters 109 (8), 2016 | 8 | 2016 |
| Reduced nonradiative recombination in semipolar green-emitting III-N quantum wells with strain-reducing AlInN buffer layers P Henning, P Horenburg, H Bremers, U Rossow, F Tendille, P Vennégués, ... Applied Physics Letters 115 (20), 2019 | 6 | 2019 |
| Deep level traps in semi‐polar n‐GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy XS Nguyen, HW Hou, P De Mierry, P Vennéguès, F Tendille, AR Arehart, ... physica status solidi (b) 253 (11), 2225-2229, 2016 | 5 | 2016 |
| Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates A Shkurmanov, C Sturm, J Lenzner, G Feuillet, F Tendille, P De Mierry, ... AIP Advances 6 (9), 2016 | 4 | 2016 |
| TEM study of defect reduction in the growth of semipolar GaN grown on patterned substrates P Vennéguès, F Tendille, M Khoury, P De Mierry, N Mante, JZ Perez, ... European Microscopy Congress 2016: Proceedings, 590-591, 2016 | 1 | 2016 |
| Ingénierie des défauts cristallins pour l’obtention de GaN semi-polaire hétéroépitaxié de haute qualité en vue d’applications optoélectroniques F Tendille Nice-Sophia Antipolis Université, 2015 | 1 | 2015 |
| Semiconductor substrate with nitrided interface layer F Tendille, I Amirouche, H Chauveau, B Beaumont US Patent App. 18/014,621, 2023 | | 2023 |
| N-co-doped semiconductor substrate. B Beaumont, JP Faurie, V GELLY, N Nahas, F TENDILLE US Patent App. 17/415,921, 2022 | | 2022 |
| Method for manufacturing a semiconductor material including a semi-polar III-nitride layer P De Mierry, F Tendille, P Vennegues US Patent 10,483,103, 2019 | | 2019 |
| Multi-microscopy of a single dislocation cluster within a GaN-on-GaN pin diode SM Fairclougha, BF Spiridona, F Tendille, F Massabuau, G Kuscha, ... | | |
| Electron backscattered diffraction and electron channelling contrast imaging of a cross-section semi-polar GaN on a patterned r-sapphire substrate G Naresh-Kumar, AV Clemente, C Trager-Cowan, AJ Wilkinson, ... | | |
Philippe venneguesCNRS-CRHEAVerified email at crhea.cnrs.fr
