| SiC photoelectrodes for a self-driven water-splitting cell T Yasuda, M Kato, M Ichimura, T Hatayama Applied Physics Letters 101 (5), 2012 | 62 | 2012 |
| Electrochemical etching of 6H-SiC using aqueous KOH solutions with low surface roughness M Kato, M Ichimura, E Arai, P Ramasamy Japanese journal of applied physics 42 (7R), 4233, 2003 | 41 | 2003 |
| Epitaxial p-type SiC as a self-driven photocathode for water splitting M Kato, T Yasuda, K Miyake, M Ichimura, T Hatayama International journal of hydrogen energy 39 (10), 4845-4849, 2014 | 37 | 2014 |
| Characterization of plasma etching damage on p-type GaN using Schottky diodes M Kato, K Mikamo, M Ichimura, M Kanechika, O Ishiguro, T Kachi Journal of Applied Physics 103 (9), 2008 | 33 | 2008 |
| Estimation of surface recombination velocity from thickness dependence of carrier lifetime in n-type 4H-SiC epilayers M Kato, A Yoshida, M Ichimura Japanese Journal of Applied Physics 51 (2S), 02BP12, 2012 | 29 | 2012 |
| Expansion of a single Shockley stacking fault in a 4H-SiC (112¯ 0) epitaxial layer caused by electron beam irradiation Y Ishikawa, M Sudo, YZ Yao, Y Sugawara, M Kato Journal of Applied Physics 123 (22), 2018 | 27 | 2018 |
| Surface recombination velocities for n-type 4H-SiC treated by various processes Y Mori, M Kato, M Ichimura Journal of Physics D: Applied Physics 47 (33), 335102, 2014 | 27 | 2014 |
| A diffraction-based technique for determination of interband absorption coefficients in bulk 3C-, 4H-and 6H-SiC crystals P Ščajev, M Kato, K Jarašiūnas Journal of Physics D: Applied Physics 44 (36), 365402, 2011 | 27 | 2011 |
| Excess carrier lifetime in a Bulk p-type 4H–SiC wafer measured by the microwave photoconductivity decay method M Kato, M Kawai, T Mori, M Ichimura, S Sumie, H Hashizume Japanese Journal of Applied Physics 46 (8R), 5057, 2007 | 27 | 2007 |
| Solar Water Splitting Utilizing a SiC Photocathode, a BiVO4 Photoanode, and a Perovskite Solar Cell A Iwase, A Kudo, Y Numata, M Ikegami, T Miyasaka, N Ichikawa, M Kato, ... ChemSusChem 10 (22), 4420-4423, 2017 | 26 | 2017 |
| The enhanced performance of 3C-SiC photocathodes for the generation of hydrogen through the use of cocatalysts N Ichikawa, M Kato, M Ichimura Applied Physics Letters 109 (15), 2016 | 23 | 2016 |
| Ultraviolet light induced electrical hysteresis effect in graphene-GaN heterojunction AK Ranade, RD Mahyavanshi, P Desai, M Kato, M Tanemura, G Kalita Applied Physics Letters 114 (15), 2019 | 22 | 2019 |
| Excess carrier recombination lifetime of bulk n-type 3C-SiC V Grivickas, G Manolis, K Gulbinas, K Jarašiūnas, M Kato Applied Physics Letters 95 (24), 2009 | 22 | 2009 |
| Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC M Kato, S Katahira, Y Ichikawa, S Harada, T Kimoto Journal of Applied Physics 124 (9), 2018 | 20 | 2018 |
| Degradation of a sintered Cu nanoparticle layer studied by synchrotron radiation computed laminography M Usui, H Kimura, T Satoh, T Asada, S Yamaguchi, M Kato Microelectronics Reliability 63, 152-158, 2016 | 20 | 2016 |
| Comparative studies of carrier dynamics in 3C-SiC layers grown on Si and 4H-SiC substrates P Ščajev, J Hassan, K Jarašiūnas, M Kato, A Henry, JP Bergman Journal of electronic materials 40, 394-399, 2011 | 20 | 2011 |
| Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers M Kato, T Asada, T Maeda, K Ito, K Tomita, T Narita, T Kachi Journal of Applied Physics 129 (11), 2021 | 18 | 2021 |
| Carrier lifetime measurements on various crystal faces of rutile TiO2 single crystals M Kato, K Kohama, Y Ichikawa, M Ichimura Materials Letters 160, 397-399, 2015 | 17 | 2015 |
| Spectral response, carrier lifetime, and photocurrents of SiC photocathodes M Kato, K Miyake, T Yasuda, M Ichimura, T Hatayama, T Ohshima Japanese Journal of Applied Physics 55 (1S), 01AC02, 2015 | 17 | 2015 |
| Photocathode for hydrogen generation using 3C-SiC epilayer grown on vicinal off-angle 4H-SiC substrate N Ichikawa, M Kato, M Ichimura Applied Physics Express 8 (9), 091301, 2015 | 17 | 2015 |
