| Properties of amorphous hydrogenated silicon, with special emphasis on preparation by sputtering W Paul, DA Anderson Solar Energy Materials 5 (3), 229-316, 1981 | 344* | 1981 |
| Regulation and innovation in the telecommunications industry M Bourreau, P Doğan Telecommunications Policy 25 (3), 167-184, 2001 | 176 | 2001 |
| Luminescence associated with stacking faults in GaN J Lähnemann, U Jahn, O Brandt, T Flissikowski, P Dogan, HT Grahn Journal of Physics D: Applied Physics 47 (42), 423001, 2014 | 148 | 2014 |
| A critical review of the “ladder of investment” approach M Bourreau, P Doğan, M Manant Telecommunications Policy 34 (11), 683-696, 2010 | 147 | 2010 |
| Access pricing, competition, and incentives to migrate from “old” to “new” technology M Bourreau, C Cambini, P Doğan International Journal of Industrial Organization 30 (6), 713-723, 2012 | 142 | 2012 |
| Direct experimental determination of the spontaneous polarization of GaN J Lähnemann, O Brandt, U Jahn, C Pfüller, C Roder, P Dogan, F Grosse, ... Physical Review B—Condensed Matter and Materials Physics 86 (8), 081302, 2012 | 136 | 2012 |
| “Build-or-buy” strategies in the local loop M Bourreau, P Doğan American Economic Review 96 (2), 72-76, 2006 | 106 | 2006 |
| Service-based vs. facility-based competition in local access networks M Bourreau, P Doğan Information Economics and Policy 16 (2), 287-306, 2004 | 100 | 2004 |
| Macro-and micro-strain in GaN nanowires on Si (111) B Jenichen, O Brandt, C Pfueller, P Dogan, M Knelangen, A Trampert Nanotechnology 22 (29), 295714, 2011 | 81 | 2011 |
| When good intentions are not enough: Sequential entry and competition in the Turkish mobile industry I Atiyas, P Doğan Telecommunications Policy 31 (8-9), 502-523, 2007 | 74 | 2007 |
| Nucleation, growth, and bundling of GaN nanowires in molecular beam epitaxy: Disentangling the origin of nanowire coalescence VM Kaganer, S Fernandez-Garrido, P Dogan, KK Sabelfeld, O Brandt Nano letters 16 (6), 3717-3725, 2016 | 60 | 2016 |
| Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder KK Sabelfeld, VM Kaganer, F Limbach, P Dogan, O Brandt, L Geelhaar, ... Applied Physics Letters 103 (13), 2013 | 60 | 2013 |
| Influence of hydrogen plasma on the defect passivation of polycrystalline Si thin film solar cells B Gorka, B Rau, P Dogan, C Becker, F Ruske, S Gall, B Rech Plasma Processes and Polymers 6 (S1), S36-S40, 2009 | 51 | 2009 |
| Access regulation and the transition from copper to fiber networks in telecoms M Bourreau, C Cambini, P Doğan Journal of Regulatory Economics 45, 233-258, 2014 | 50 | 2014 |
| Cooperation in product development and process R&D between competitors M Bourreau, P Doğan International Journal of Industrial Organization 28 (2), 176-190, 2010 | 46 | 2010 |
| Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass B Rau, T Weber, B Gorka, P Dogan, F Fenske, KY Lee, S Gall, B Rech Materials Science and Engineering: B 159, 329-332, 2009 | 46 | 2009 |
| Solid-phase crystallization of amorphous silicon on ZnO: Al for thin-film solar cells C Becker, E Conrad, P Dogan, F Fenske, B Gorka, T Hänel, KY Lee, ... Solar Energy Materials and Solar Cells 93 (6-7), 855-858, 2009 | 39 | 2009 |
| Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles VM Kaganer, B Jenichen, O Brandt, S Fernández-Garrido, P Dogan, ... Physical Review B—Condensed Matter and Materials Physics 86 (11), 115325, 2012 | 37 | 2012 |
| Formation of high-quality GaN microcrystals by pendeoepitaxial overgrowth of GaN nanowires on Si (111) by molecular beam epitaxy P Dogan, O Brandt, C Pfüller, J Lähnemann, U Jahn, C Roder, ... Crystal growth & design 11 (10), 4257-4260, 2011 | 37 | 2011 |
| CSG minimodules using electron-beam evaporated silicon R Egan, M Keevers, U Schubert, T Young, R Evans, S Partlin, M Wolf, ... 24th European Photovoltaic Solar Energy Conference, 2279-2285, 2009 | 35 | 2009 |
