Pınar Doğan
Pınar Doğan
Assistant Professor, Department of Electrical and Electronics Engineering, Mugla Sitki Kocman
Verified email at
Cited by
Cited by
Properties of amorphous hydrogenated silicon, with special emphasis on preparation by sputtering
W Paul, DA Anderson
Solar Energy Materials 5 (3), 229-316, 1981
Regulation and innovation in the telecommunications industry
M Bourreau, P Doğan
Telecommunications Policy 25 (3), 167-184, 2001
Luminescence associated with stacking faults in GaN
J Lähnemann, U Jahn, O Brandt, T Flissikowski, P Dogan, HT Grahn
Journal of Physics D: Applied Physics 47 (42), 423001, 2014
A critical review of the “ladder of investment” approach
M Bourreau, P Doğan, M Manant
Telecommunications Policy 34 (11), 683-696, 2010
Access pricing, competition, and incentives to migrate from “old” to “new” technology
M Bourreau, C Cambini, P Doğan
International Journal of Industrial Organization 30 (6), 713-723, 2012
Direct experimental determination of the spontaneous polarization of GaN
J Lähnemann, O Brandt, U Jahn, C Pfüller, C Roder, P Dogan, F Grosse, ...
Physical Review B 86 (8), 081302, 2012
“Build-or-buy” strategies in the local loop
M Bourreau, P Doğan
American Economic Review 96 (2), 72-76, 2006
Service-based vs. facility-based competition in local access networks
M Bourreau, P Doğan
Information Economics and Policy 16 (2), 287-306, 2004
Macro-and micro-strain in GaN nanowires on Si (111)
B Jenichen, O Brandt, C Pfueller, P Dogan, M Knelangen, A Trampert
Nanotechnology 22 (29), 295714, 2011
When good intentions are not enough: Sequential entry and competition in the Turkish mobile industry
I Atiyas, P Doğan
Telecommunications Policy 31 (8-9), 502-523, 2007
Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder
KK Sabelfeld, VM Kaganer, F Limbach, P Dogan, O Brandt, L Geelhaar, ...
Applied Physics Letters 103 (13), 2013
Nucleation, growth, and bundling of GaN nanowires in molecular beam epitaxy: Disentangling the origin of nanowire coalescence
VM Kaganer, S Fernandez-Garrido, P Dogan, KK Sabelfeld, O Brandt
Nano letters 16 (6), 3717-3725, 2016
Influence of hydrogen plasma on the defect passivation of polycrystalline Si thin film solar cells
B Gorka, B Rau, P Dogan, C Becker, F Ruske, S Gall, B Rech
Plasma Processes and Polymers 6 (S1), S36-S40, 2009
Access regulation and the transition from copper to fiber networks in telecoms
M Bourreau, C Cambini, P Doğan
Journal of Regulatory Economics 45, 233-258, 2014
Cooperation in product development and process R&D between competitors
M Bourreau, P Doğan
International Journal of Industrial Organization 28 (2), 176-190, 2010
Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass
B Rau, T Weber, B Gorka, P Dogan, F Fenske, KY Lee, S Gall, B Rech
Materials Science and Engineering: B 159, 329-332, 2009
Solid-phase crystallization of amorphous silicon on ZnO: Al for thin-film solar cells
C Becker, E Conrad, P Dogan, F Fenske, B Gorka, T Hänel, KY Lee, ...
Solar Energy Materials and Solar Cells 93 (6-7), 855-858, 2009
Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles
VM Kaganer, B Jenichen, O Brandt, S Fernández-Garrido, P Dogan, ...
Physical Review B 86 (11), 115325, 2012
Formation of high-quality GaN microcrystals by pendeoepitaxial overgrowth of GaN nanowires on Si (111) by molecular beam epitaxy
P Dogan, O Brandt, C Pfüller, J Lähnemann, U Jahn, C Roder, ...
Crystal growth & design 11 (10), 4257-4260, 2011
CSG minimodules using electron-beam evaporated silicon
R Egan, M Keevers, U Schubert, T Young, R Evans, S Partlin, M Wolf, ...
24th European Photovoltaic Solar Energy Conference, 2279-2285, 2009
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