| High performance amorphous oxide thin film transistors with self-aligned top-gate structure JC Park, SW Kim, SI Kim, H Yin, JH Hur, SH Jeon, SH Park, IH Song, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 622 | 2009 |
| High-Performance oxide thin film transistors passivated by various gas plasmas S Kim, J Park, C Kim, S Kim, I Song, H Yin, J Lee, E Lee, Y Park The Electrochemical Society, 214th ECS Meeting, 1, 2008 | 619 | 2008 |
| All-solid-state spatial light modulator with independent phase and amplitude control for three-dimensional LiDAR applications J Park, BG Jeong, SI Kim, D Lee, J Kim, C Shin, CB Lee, T Otsuka, ... Nature nanotechnology 16 (1), 69-76, 2021 | 291 | 2021 |
| Low‐temperature‐grown transition metal oxide based storage materials and oxide transistors for high‐density non‐volatile memory MJ Lee, SI Kim, CB Lee, H Yin, SE Ahn, BS Kang, KH Kim, JC Park, ... Advanced Functional Materials 19 (10), 1587-1593, 2009 | 282 | 2009 |
| Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors CJ Kim, S Kim, JH Lee, JS Park, S Kim, J Park, E Lee, J Lee, Y Park, ... Applied Physics Letters 95 (25), 2009 | 275 | 2009 |
| High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation J Park, S Kim, C Kim, S Kim, I Song, H Yin, KK Kim, S Lee, K Hong, J Lee, ... Applied Physics Letters 93 (5), 2008 | 179 | 2008 |
| Highly stable transparent amorphous oxide semiconductor thin‐film transistors having double‐stacked active layers JC Park, S Kim, S Kim, C Kim, I Song, Y Park, UI Jung, DH Kim, JS Lee Advanced Materials 22 (48), 5512-5516, 2010 | 163 | 2010 |
| Persistent photoconductivity in Hf–In–Zn–O thin film transistors K Ghaffarzadeh, A Nathan, J Robertson, S Kim, S Jeon, C Kim, UI Chung, ... Applied Physics Letters 97 (14), 2010 | 162 | 2010 |
| Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors J Park, I Song, S Kim, S Kim, C Kim, J Lee, H Lee, E Lee, H Yin, KK Kim, ... Applied Physics Letters 93 (5), 2008 | 141 | 2008 |
| Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress K Ghaffarzadeh, A Nathan, J Robertson, S Kim, S Jeon, C Kim, UI Chung, ... Applied Physics Letters 97 (11), 2010 | 133 | 2010 |
| Short channel characteristics of gallium–indium–zinc–oxide thin film transistors for three-dimensional stacking memory I Song, S Kim, H Yin, CJ Kim, J Park, S Kim, HS Choi, E Lee, Y Park IEEE Electron Device Letters 29 (6), 549-552, 2008 | 132 | 2008 |
| Inverter, logic circuit including an inverter and methods of fabricating the same SW Kim, Y Park, JC Park US Patent 7,847,287, 2010 | 131 | 2010 |
| Stack friendly all-oxide 3D RRAM using GaInZnO peripheral TFT realized over glass substrates MJ Lee, CB Lee, S Kim, H Yin, J Park, SE Ahn, BS Kang, KH Kim, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 125 | 2008 |
| Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics K Jeon, C Kim, I Song, J Park, S Kim, S Kim, Y Park, JH Park, S Lee, ... Applied Physics Letters 93 (18), 2008 | 125 | 2008 |
| Source/drain series-resistance effects in amorphous gallium–indium zinc-oxide thin film transistors J Park, C Kim, S Kim, I Song, S Kim, D Kang, H Lim, H Yin, R Jung, E Lee, ... IEEE Electron Device Letters 29 (8), 879-881, 2008 | 123 | 2008 |
| 180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications S Jeon, S Park, I Song, JH Hur, J Park, S Kim, S Kim, H Yin, E Lee, S Ahn, ... 2010 International Electron Devices Meeting, 21.3. 1-21.3. 4, 2010 | 116 | 2010 |
| Inverter, method of operating the same and logic circuit comprising inverter S Kim, S Ihun, C Kim, J Park, S Kim US Patent 7,940,085, 2011 | 110 | 2011 |
| Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer H Yin, S Kim, CJ Kim, I Song, J Park, S Kim, Y Park Applied Physics Letters 93 (17), 2008 | 100 | 2008 |
| Impact of high-k TiOx dielectric on device performance of indium-gallium-zinc oxide transistors JS Park, JK Jeong, YG Mo, S Kim Applied Physics Letters 94 (4), 2009 | 91 | 2009 |
| High performance oxide thin film transistors with double active layers SI Kim, CJ Kim, JC Park, I Song, SW Kim, H Yin, E Lee, JC Lee, Y Park 2008 IEEE international electron devices meeting, 1-4, 2008 | 91 | 2008 |
Eunha LeeSAIT (Samsung Advanced Institute of Technology), Samsung ElectronicsVerified email at samsung.com
