| nm InAs Channel MOSFETs Exhibiting GHz and GHz J Wu, Y Fang, B Markman, HY Tseng, MJW Rodwell IEEE Electron Device Letters 39 (4), 472-475, 2018 | 31 | 2018 |
| Horizontal heterojunction integration via template-assisted selective epitaxy ST Šuran Brunelli, A Goswami, B Markman, HY Tseng, M Rodwell, ... Crystal Growth & Design 19 (12), 7030-7035, 2019 | 18 | 2019 |
| Selective and confined epitaxial growth development for novel nano-scale electronic and photonic device structures ST Šuran Brunelli, B Markman, A Goswami, HY Tseng, S Choi, ... Journal of Applied Physics 126 (1), 2019 | 15 | 2019 |
| Doping profile engineered triple heterojunction TFETs with 12-nm body thickness CY Chen, HY Tseng, H Ilatikhameneh, TA Ameen, G Klimeck, MJ Rodwell, ... IEEE Transactions on Electron Devices 68 (6), 3104-3111, 2021 | 12 | 2021 |
| Mg incorporation in GaN grown by plasma-assisted molecular beam epitaxy at high temperatures WC Yang, PY Lee, HY Tseng, CW Lin, YT Tseng, KY Cheng Journal of Crystal Growth 439, 87-92, 2016 | 12 | 2016 |
| Controlling facets and defects of InP nanostructures in confined epitaxial lateral overgrowth A Goswami, STŠ Brunelli, B Markman, AA Taylor, HY Tseng, K Mukherjee, ... Physical Review Materials 4 (12), 123403, 2020 | 8 | 2020 |
| Transistors for 100-300GHz Wireless M Rodwell, B Markman, Y Fang, L Whitaker, HY Tseng, ASH Ahmed ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021 | 3 | 2021 |
| GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy HY Tseng, WC Yang, PY Lee, CW Lin, KY Cheng, KC Hsieh, KY Cheng, ... Applied Physics Letters 109 (8), 2016 | 3 | 2016 |
| InP/lnGaAs DHBT with Self-aligned MOCVD Regrown p-GaAs Extrinsic Base Exhibiting Base Contact Resistivity Y Fang, HY Tseng, MJW Rodwell 2019 Device Research Conference (DRC), 179-180, 2019 | 2 | 2019 |
| Atomic layer deposition of TiN/Ru gate in InP MOSFETs HY Tseng, Y Fang, WJ Mitchell, AA Taylor, MJW Rodwell Applied Physics Letters 119 (12), 2021 | 1 | 2021 |
| Triple-heterojunction (3-HJ) TFETs Design and Fabrication for Low Power Logic HY Tseng University of California, Santa Barbara, 2021 | 1 | 2021 |
| InP MOSFETs exhibiting record 70 mV/DEC subthreshold swing HY Tseng, Y Fang, S Zhong, MJW Rodwell 2019 Device Research Conference (DRC), 183-184, 2019 | 1 | 2019 |
| Effects of growth parameters on faceting and defects in confined epitaxial lateral overgrowth A Goswami, ST Šuran Brunelli, B Markman, D Pennachio, HY Tseng, ... Bulletin of the American Physical Society 65, 2020 | | 2020 |
| PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0058825 HY Tseng, Y Fang, WJ Mitchell, AA Taylor, MJW Rodwell | | |
