| Thermal conductance across harmonic-matched epitaxial Al-sapphire heterointerfaces Z Cheng, YR Koh, H Ahmad, R Hu, J Shi, ME Liao, Y Wang, T Bai, R Li, ... Communications Physics 3 (1), 115, 2020 | 59 | 2020 |
| Substantial P‐Type Conductivity of AlN Achieved via Beryllium Doping H Ahmad, J Lindemuth, Z Engel, CM Matthews, TM McCrone, ... Advanced Materials 33 (42), 2104497, 2021 | 44 | 2021 |
| Thermal boundary conductance across epitaxial metal/sapphire interfaces YR Koh, J Shi, B Wang, R Hu, H Ahmad, S Kerdsongpanya, E Milosevic, ... Physical Review B 102 (20), 205304, 2020 | 33 | 2020 |
| Thermal conductivity measurements of sub-surface buried substrates by steady-state thermoreflectance MSB Hoque, YR Koh, K Aryana, ER Hoglund, JL Braun, DH Olson, ... Review of Scientific Instruments 92 (6), 2021 | 28 | 2021 |
| Realization of homojunction PN AlN diodes H Ahmad, Z Engel, CM Matthews, S Lee, WA Doolittle Journal of Applied Physics 131 (17), 2022 | 21 | 2022 |
| Comprehensive analysis of metal modulated epitaxial GaN H Ahmad, K Motoki, EA Clinton, CM Matthews, Z Engel, WA Doolittle ACS applied materials & interfaces 12 (33), 37693-37712, 2020 | 20 | 2020 |
| High thermal conductivity and thermal boundary conductance of homoepitaxially grown gallium nitride (GaN) thin films YR Koh, MSB Hoque, H Ahmad, DH Olson, Z Liu, J Shi, Y Wang, K Huynh, ... Physical Review Materials 5 (10), 104604, 2021 | 18 | 2021 |
| Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices H Ahmad, TJ Anderson, JC Gallagher, EA Clinton, Z Engel, CM Matthews, ... Journal of Applied Physics 127 (21), 2020 | 16 | 2020 |
| Prospectives for AlN electronics and optoelectronics and the important role of alternative synthesis WA Doolittle, CM Matthews, H Ahmad, K Motoki, S Lee, A Ghosh, ... Applied Physics Letters 123 (7), 2023 | 11 | 2023 |
| Stable and high performance algan self-aligned-gate field emitter arrays PC Shih, G Rughoobur, Z Engel, H Ahmad, WA Doolittle, AI Akinwande, ... IEEE Electron Device Letters 43 (8), 1351-1354, 2022 | 8 | 2022 |
| Wet-based digital etching on GaN and AlGaN PC Shih, Z Engel, H Ahmad, WA Doolittle, T Palacios Applied Physics Letters 120 (2), 2022 | 7 | 2022 |
| Adlayer control for tunable AlGaN self-assembled superlattices Z Engel, EA Clinton, K Motoki, H Ahmad, CM Matthews, WA Doolittle Journal of Applied Physics 130 (16), 2021 | 7 | 2021 |
| p-type AlN based heteroepitaxial diodes with Schottky, Pin, and junction barrier Schottky character achieving significant breakdown performance H Ahmad, Z Engel, CM Matthews, WA Doolittle Journal of Applied Physics 130 (19), 2021 | 4 | 2021 |
| Cascaded Ni hard mask to create chlorine-based ICP dry etched deep mesas for high-power devices H Ahmad, Z Engel, M Zia, AS Weidenbach, CM Matthews, B Zivasatienraj, ... Semiconductor Science and Technology 36 (12), 125016, 2021 | 4 | 2021 |
| TCAD design of InGaN-based monolithic multi-wavelength LED with controlled Power spectral distributions H Ahmad, S Hussain Optik 126 (21), 3140-3144, 2015 | 3 | 2015 |
| Cathodoluminescence investigation of defect states in n-and p-type AlN CM Matthews, H Ahmad, K Hussain, MVS Chandrashekhar, A Khan, ... Applied Physics Letters 124 (5), 2024 | 1 | 2024 |
| Observation of interfacial strain relaxation and electron beam damage thresholds in Al0. 3In0. 7N/GaN heterostructures by transmission electron microscopy K Motoki, Z Engel, CM Matthews, H Ahmad, TM McCrone, K Harada, ... Journal of Vacuum Science & Technology B 40 (5), 2022 | 1 | 2022 |
| Ion irradiation induced crystalline disorder accelerates interfacial phonon conversion and reduces thermal boundary resistance TW Pfeifer, H Aller, ER Hoglund, EA Scott, JA Tomko, H Ahmad, ... Physical Review B 109 (16), 165421, 2024 | | 2024 |
| New Surface Chemistry and Adatom Kinetics Results in Novel Extreme Bandgap Semiconductor Device Opportunities A Doolittle, Z Engel, H Ahmad, C Matthews, K Motoki, S Lee, E Marshall APS March Meeting Abstracts 2023, S51. 004, 2023 | | 2023 |
| GaN: Be I-Layer-Based High-Power pin Diodes Achieving Large Quasi-Vertical MBE Breakdown Performance H Ahmad, Z Engel, A Ghosh, CM Matthews, WA Doolittle IEEE Transactions on Electron Devices 69 (5), 2566-2572, 2022 | | 2022 |
William Alan DoolittleGeorgia Institute of TechnologyVerified email at ece.gatech.edu
